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1997 Fiscal Year Final Research Report Summary

Measuring the Probability Density of Quantum Confined States

Research Project

Project/Area Number 08650380
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

MORI Nobuya  Osaka University, Faculty of Engineering, Lecturer, 工学部, 講師 (70239614)

Co-Investigator(Kenkyū-buntansha) MOMOSE Hideki  Osaka University, Low Temperature Center, Research Associate, 低温センター, 助手 (80260636)
MORIFUJI Masato  Osaka University, Faculty of Engineering, Research Associate, 工学部, 助手 (00230144)
HAMAGUCHI Chihiro  Osaka University, Faculty of Engineering, Professor, 工学部, 教授 (40029004)
Project Period (FY) 1996 – 1997
Keywordstunneling effect / quantum dot / Coulomb interaction / electron-phonon interaction / ionized impurity / resonant tunneling / extact diagonalization / single electron device
Research Abstract

In order to analyze the effect of electron-electron interaction on measuring the probability density of quantum confined states, a computer program has been made which numerically calculates the exact N-electron states in a quantum dot by diagonalizing the Hamiltonian matrix.
Electronic structures in circular, elliptic and triangular shaped quantum dots containing single or N electrons have then been calculated using the computer program. In a circular quantum dot, the addition energy shows a clear structure as a function of N due to the shell filling and the spin polarized half filling. In an elliptic quantum dot, however, the structure is found to be diminished, which is attributed to the splitting of the degenerated single-particle states due to the asymmetric confining potential. Tunneling matrix elements through a quantum dot have been calculated by using the eigen states evaluated with the exact diagonalization.
Energy relaxation time through longitudinal-acoustic phonon emission has also been calculated for a GaAs quantum dot with N electrons (from N=1 to 4), where the electrons in a narrow quantum well are confined by a parabolic confining potential. The electronic states are numerically evaluated by taking into account of the Coulomb interaction between the electrons, and the relaxation time is estimated by using the Fermi's golden rule. As the number of electrons increases, the energy levels become dense, and the number of relaxation channels drastically increases. From the evaluation of the relaxation time associated with all the relaxation channels, several relaxation processes are found to be accelerated by indirect process through some intermediate states between the initial and the final states.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] K.Moriyasu, S.Osaka, N.Mori and C.Hamaguchi: "Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In_<0.2>Ga_<0.8>As/GaAs quantum dots" Japanese Journal of Applied Physics. 36. 3932-3935 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ezaki, N.Mori and C.Hamaguchi: "Electronic structures in circular,elliptic,and triangular quantum dots" Physical Review B. 56. 6428-6431 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.M.Feng, J.H.Park, S.Ozaki, H.Kubo, N.Mori and C.Hamaguchi: "Resonant optical-phonon assisted tunnelling in an asymmetric doublequantum-well structure" Semiconductor Science and Technology. 12. 1116-1120 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Mori, H.Momose and C.Hamaguchi: "Self-consistent approximation for electron-optical-phonon interaction in a quantum wire" Physica Status Solidi (b). 204. 268-271 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ezaki, N.Mori and C.Hamaguchi: "Energy relaxation time of electrons in quantum dots" Physica Status Solidi (b). 204. 272-274 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Ozaki, J.M.Feng, J.H.Park, S.Osako, H, Kubo, M.Morifuji, N.Mori and C.Hamaguchi: "Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells" Journal of Applied Physics. 83. 962-965 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Moriyasu, S.Osako, N.Mori and C.Hamaguchi: "Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In_<0.2>Ga_<0.8>As/GaAs quantum dots" Japanese Journal of Applied Physics. Vol.36. 3932-3935 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ezaki, N.Mori and C.Hamaguchi: "Electronic structures in circular, elliptic, and triangular quantum dots" Physical Review B. Vol.56. 6428-6431 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.M.Feng, J.H.Park, S.Ozaki, H.Kubo, N.Mori and C.Hamaguchi: "Resonant optical-phonon assisted tunnelling in an asymmetric double-quantum-well structure" Semiconductor Science and Technology. Vol.12. 1116-1120 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Mori, H.Momose and C.Hamaguchi: "Self-consistent approximation for electron-optical-phonon interaction in a quantum wire" Physica Status Solidi (b). Vol.204. 268-271 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ezaki, N.Mori and C.Hamaguchi: "Energy relaxation time of electrons in quantum dots" Physica Status Solidi (b). Vol.204. 272-274 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ozaki, J.M.Feng, J.H.Park, S.Osako, H.Kubo, M.Morifuji, N.Mori and C.Hamaguchi: "Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells" Journal of Applied Physics. Vol.83. 962-965 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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