1997 Fiscal Year Annual Research Report

スパッタ膜作製における低エネルギーイオン照射による膜特性の制御に関する研究

Research Project

Project/Area Number	08650383
Research Institution	THE UNIVERSITY OF TOKUSHIMA
Principal Investigator	富永喜久雄徳島大学, 工学部, 助教授 (10035660)
Co-Investigator(Kenkyū-buntansha)	英崇夫徳島大学, 工学部, 教授 (20035637) 中林一郎徳島大学, 工学部, 教授 (70035624)
Keywords	スパッタリング / 窒化物薄膜 / 酸化物薄膜 / AlN / ZnO / ITO / 透明導電膜
Research Abstract	本研究ではスパッタリングプロセスにおけるプラズマからのイオン照射に関連する膜特性への影響を窒化物と酸化物膜において調べた.ターゲットを対向型にすることは従来法の基板をターゲットの正面に置く方式に比べイオン照射が減少する方式であるが,A1N膜作製においてc軸のそろった膜を得ることが難しい.この疎外要因が基板へのイオン衝撃によることを示した.ターゲットの一方を強制的に正にバイアスし,電子をその電極へ流すことを交互に繰り返す方式(交代式スパッタ法)で膜を作製すると,膜のイオン照射を軽減するのに役だった.このことはA1N膜作製において,過度のイオン照射がc軸配向性や結晶粒成長を抑えていることを示すものである。基板前面に網を設置することも膜を衝撃するイオン数と関連しているし、対向ターゲット方式によるスパッタ法では磁界分布も結晶成長に大きく関係してくることを示した.膜特性と飛来するイオンが密接に関連していることを示した.酸化物スパッタ膜作製においては,ZnO膜でもっとも低い抵抗率といわれていた150-200μΩcmの値の膜は単に高速酸素原子の膜衝撃を取り除くだけでは実現できず,イオン衝撃以外の要因が関係していることが明らかになった.ZnO:Al膜においてZn原子の添加が抵抗率の低下に寄与することを示した.膜中の欠陥(確定したものではない)がZn添加により減少することを意味する。結晶成長初期の核形成の増大が原因と考えられる.ITO膜については,(00.2)配向したAlN膜を形成してガラス基板上に(222)配向したITO膜を形成できた.AlN膜上のITO膜はガラス基板上より少し低い抵抗率を示すにとどまった。キャリア密度はかなりの増大がみられたが,これは結晶中の欠陥が減少したことによると考えられる。しかし、キャリア移動度の低下が生じたため抵抗率の大幅な減少は見込めなかった.

Research Products

(18 results)

All Other

All Publications (18 results)

[Publications] K.Tominaga: "ZnO:In Film Prepared by Sputtering of Facing ZnO:In and Zn Targets" J.Vac.Sci.& Technol.(掲載予定). (1998)
[Publications] K.Tominaga: "Film Properties of ZnO:Al Prepared by Co-sputtering of ZnO:Al and Either Zn and Al Target" J.Vac.Sci.& Technol.Vol.A15,No.3. 1074-1079 (1997)
[Publications] K.Tominaga: "ZnO:Al Films prepared by the Facing Target Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 238-243 (1997)
[Publications] S.Kumano: "Fablication of ZnO Varistor Thin Films by RF Sputtering Technique" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 221-225 (1997)
[Publications] K.Tominaga: "Transparent Conductive ZnO Film Preparation by Alternative Sputtering of ZnO:Al Target and Either Zn or Al Target" Thin Solid Films. (掲載予定). (1998)
[Publications] K.Tominaga: "Effects of UV Light Irradiation and Excess Zn Addition on ZnO:Al Film Properties in Sputtering Process" Thin Solid Films. 掲載予定 (1998)
[Publications] K.Tominaga: "Magnetic Field Dependence of AlN Properties in DC Facing Sputtering" Proc.4th Int.Symp.on Sputtering and Plasma Processes. Kanazawa,ISSP'97. 129-133 (1997)
[Publications] 日下一也: "交代式スパッタリング法によるAlN膜の残留応力測定" 材料. Vol.46,No.12. 1429-1435 (1997)
[Publications] K.Kusaka: "Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of the Fifth International Conference on Residual Stresses. Linkoping,Sweden. (June 1997)
[Publications] K.Kusaka: "Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application New Zealand. 310-319 (1997)
[Publications] K.Kusaka: "Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of The Second International Conference on Nitride Semiconductors. Tokushima,Japan. 378 (1997)
[Publications] Kikuo Tominaga: "ITO Films Prepared by Facing Target Sputtering System" Thin Solid Films. 281-282. 194-197 (1996)
[Publications] Kikuo.Tominaga: "TiN Films Prepared by Unbalanced Planar Magnetron Sputtering under Control of Photoemission of Ti" Thin Solid Films. 281-282. 182-185 (1996)
[Publications] Kazuya.Kusaka: "Effects of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Thin Solid Films. 281-282. 340-343 (1996)
[Publications] Kikuo.Tominaga: "ITO Films Prepared on Oriented AlN Films by Facing Target Sputtereing System" Transactions of Material Research Society of Japan. Vol.20. 554-557 (1996)
[Publications] Kikuo Tominaga: "Transparent ZnO:Al Film Prepared by Co-Sputtering of A ZnO:Al and Either Zn or Al" Thin Solid Films. 290-291. 84-87 (1996)
[Publications] Kikuo Tominaga: "Gas Pressure Dependence of AlN Films Prepared in Alternative Magnetron Sputtering" Jpn.J.Appl.Phys. Vol.35. 4972-4975 (1996)
[Publications] Kazuya Kusaka: "Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by Magnetron Sputtering System" Thin Solid Films. 290-291. 260-263 (1996)

1997 Fiscal Year Annual Research Report

スパッタ膜作製における低エネルギーイオン照射による膜特性の制御に関する研究

Principal Investigator

富永 喜久雄 徳島大学, 工学部, 助教授 (10035660)

Research Products

[Publications] K.Tominaga: "ZnO:In Film Prepared by Sputtering of Facing ZnO:In and Zn Targets" J.Vac.Sci.& Technol.(掲載予定). (1998)

[Publications] K.Tominaga: "Film Properties of ZnO:Al Prepared by Co-sputtering of ZnO:Al and Either Zn and Al Target" J.Vac.Sci.& Technol.Vol.A15,No.3. 1074-1079 (1997)

[Publications] K.Tominaga: "ZnO:Al Films prepared by the Facing Target Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 238-243 (1997)

[Publications] S.Kumano: "Fablication of ZnO Varistor Thin Films by RF Sputtering Technique" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 221-225 (1997)

[Publications] K.Tominaga: "Transparent Conductive ZnO Film Preparation by Alternative Sputtering of ZnO:Al Target and Either Zn or Al Target" Thin Solid Films. (掲載予定). (1998)

[Publications] K.Tominaga: "Effects of UV Light Irradiation and Excess Zn Addition on ZnO:Al Film Properties in Sputtering Process" Thin Solid Films. 掲載予定 (1998)

[Publications] K.Tominaga: "Magnetic Field Dependence of AlN Properties in DC Facing Sputtering" Proc.4th Int.Symp.on Sputtering and Plasma Processes. Kanazawa,ISSP'97. 129-133 (1997)

[Publications] 日下一也: "交代式スパッタリング法によるAlN膜の残留応力測定" 材料. Vol.46,No.12. 1429-1435 (1997)

[Publications] K.Kusaka: "Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of the Fifth International Conference on Residual Stresses. Linkoping,Sweden. (June 1997)

[Publications] K.Kusaka: "Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application New Zealand. 310-319 (1997)

[Publications] K.Kusaka: "Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of The Second International Conference on Nitride Semiconductors. Tokushima,Japan. 378 (1997)

[Publications] Kikuo Tominaga: "ITO Films Prepared by Facing Target Sputtering System" Thin Solid Films. 281-282. 194-197 (1996)

[Publications] Kikuo.Tominaga: "TiN Films Prepared by Unbalanced Planar Magnetron Sputtering under Control of Photoemission of Ti" Thin Solid Films. 281-282. 182-185 (1996)

[Publications] Kazuya.Kusaka: "Effects of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Thin Solid Films. 281-282. 340-343 (1996)

[Publications] Kikuo.Tominaga: "ITO Films Prepared on Oriented AlN Films by Facing Target Sputtereing System" Transactions of Material Research Society of Japan. Vol.20. 554-557 (1996)

[Publications] Kikuo Tominaga: "Transparent ZnO:Al Film Prepared by Co-Sputtering of A ZnO:Al and Either Zn or Al" Thin Solid Films. 290-291. 84-87 (1996)

[Publications] Kikuo Tominaga: "Gas Pressure Dependence of AlN Films Prepared in Alternative Magnetron Sputtering" Jpn.J.Appl.Phys. Vol.35. 4972-4975 (1996)

[Publications] Kazuya Kusaka: "Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by Magnetron Sputtering System" Thin Solid Films. 290-291. 260-263 (1996)

富永喜久雄徳島大学, 工学部, 助教授 (10035660)