1997 Fiscal Year Final Research Report Summary
SURFACE MODIFICATION BY HIGH INTENSITY ION BEAM IRRADIATION
| Project/Area Number |
08650843
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
MATSUO Jiro KYOTO UNIVERSITY FACULTY OF ENGINEERING,ASSISTANT, 工学部, 助手 (40263123)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAOKA Gikan KYOTO UNIVERSITY FACULTY OF ENGINEERING,ASSISTANT PROFESSOR, 工学部, 助教授 (90135525)
YAMADA Isao KYOTO UNIVERSITY FACULTY OF ENGINEERING,PROFESSOR, 工学部, 教授 (00026048)
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| Project Period (FY) |
1996 – 1997
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| Keywords | CLUSTER ION / OXIDIZATION / ETCHING / SPUTTERING / SiC / FILM FORMATION / InOx / TRANSPARENT CONDUCTING FILM |
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| Research Abstract |
In order to realize multiple function films, a new ion beam technology is required. We have developed the gas cluster ion beam technique and studied for the fabrication of the multiple function films. A cluster ion is an aggregate of a few to several thousands atoms, and it transports a large amount of atoms as one ion. When a cluster impacts a surface, high-density energy deposition and multiple-collision are realized. Therefore the energy state of the bombarded area becomes extremely high, and subsequently, the reactivity on the surface with cluster ion beam is higher than conventional ion beam techniques. In this study, the surface smoothing of the diamond films and the fabrication of ITO(Indium Tin Oxide)films with O_2 cluster ion irradiation were studied.
The diamond surface irradiated with Ar cluster ions became very smooth. It is caused by high dense of ion irradiation and the smoothing effect of the lateral sputtering. After irradiation, the diamond surfaces became brown because of the formation of graphite layr on the surface. However, it can be removed by reactive O_2 cluster irradiation. This result indicates that multiple function surfaces can be formed with both physical and reactive cluster beams. Besides, high transparent and high conducting ITO film can be formed at room temperature with O_2 cluster ion irradiation during the deposition of In and Sn. The transparency and conductivity of this film is higher than that with conventional techniques that are done at 300ﾟC.These results indicate that cluster ion beams are useful for the surface treatment and film formations of next generation.
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