1997 Fiscal Year Final Research Report Summary
Study on Neutron Damage Dynamics of Semiconductor Materials
| Project/Area Number |
08680525
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
エネルギー学一般・原子力学
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| Research Institution | Osaka University |
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Principal Investigator |
IIDA Toshiyuki Osaka University, Faculty of Engineering, Professor, 工学部, 教授 (60115988)
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| Project Period (FY) |
1996 – 1997
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| Keywords | Neutron Irradiation Effect / Neutron Damage / Silicon Semiconductor Device / Charge Coupled Device / Silicon Surface Barrier Detector / DT-DD Neutron Damage Correlation / TRIM code / Molecular Dynamics Simulation Code |
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| Research Abstract |
In order to examine the neutron damage effects from a microscopic point, highdensity integrated circuits (ICs) such as CCD image sensors were successfully used as samples for neutron irradiation experiments. A CCD image sensor clearly measured tracks of high-energy paticles preduced by neutron reactions in silicon crystal. Measured image data on the tracks by the (n, p), (n, alpha) and other neutron reactions were in good agreement in results calculated with the TRIM code, which suggests that the use of such exquisite devices as CCD sensors are effective in the examination of the neutron damage from a microscopic point. The correlation factor of the DT-DD neutron damage on the CCD image sensors was obtained from experimental results on their neutron damage constants and was found to be 1.4-1.6. This factor approximately agreed with that obtained from the displacement damage calculation.
The response of a silicon surface barrier detector (Si-SBD) to neutrons and ions was measured with the energy spectroscopy system. Measured pulse height spectra of a Si-SBD were compared with results calculated with the simulation codes, the well-known TRIM and the MDRANGE based on the molecular dynamics. The molecular dynamics simulation code gave better results on the response of the Si-SBD in lower-energy region.
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