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1998 Fiscal Year Final Research Report Summary

Structure and Dynamics at Solid/Solution Interphase

Research Project

Project/Area Number 09044045
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research Field 機能・物性・材料
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

UOSAKI Kohei  Hokkaido Univ., Grad.Sch.of Sci., Prof., 大学院・理学研究科, 教授 (20133697)

Co-Investigator(Kenkyū-buntansha) SHEN Y.R.  Univ.of California, Berkley, Prof., 教授
OCKO B.M.  Brookhaven National Laboratory, Senior Research Scientist, 主席研究員
TADJEDDINE A  国立科学研究所, LVRE副所長
YE Shen  Hokkaido Univ., Grad.Sch.of Sci., Research Associate, 大学院・理学研究科, 助手 (40250419)
KONDO Toshihiro  Hokkaido Univ., Grad.Sch.of Sci., Research Associate, 大学院・理学研究科, 助手 (70240629)
TADJEDDINE Abderrahmane  LURE-CNRS,Deputy Director
Project Period (FY) 1997 – 1998
KeywordsElectrochemistry / SOR / SXS / non-linear spectroscopy / XSW / semiconductor electrode / electrodeposition / XAS
Research Abstract

This research was carried out to fully understand the reactions at solid/solution interface. First, the three dimensional structure of solid/solution interface was detrermined with atomic resolution by SXS, XSW and XAS using SOR as well as by STM and AEM.
Second, interfacial reaction dynamics was studied by fast non-linear laser spectroscopy such as SUG and SFG.
1. Uosaki presented result at ECS spring meeting.
2. Uosaki visited Max-Plank Institute and discussed on XSW study with Dr.Zegenhagen and then presented result at International Meeting held in Portugal.
3. Uosaki visited Max-Plank institute to continue the research on XSW.
4. Uosaki presented results at ACS fall meeting and then Visited Brookhaven National Laboratory to discuss with Dr. Ocko.
5. Dr. Ocko and Dr. Tadjeddine were invited to carry out experiments of non-linear spectroscopy and SOR at Hokkaido University and Spring 8, respectively.
6. Uosaki and Yamada carried out experiments at Brookhaven National Laboratory and then Uosaki visited CNRS to carry out experiments of dynamics.
7. Ye and Noguchi presented results at ACS spring meeting.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] K.Uosaki: "In Situ Observation of the Anodic Dissolution Process of p-GaAs (100) in HCI solution by surface X-ray Diffraction" Journal of Electroanalytical Chemistry. 429. 13-17 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kondo: "Coverage Dependant Structure of Electrochemically Deposited Cu on P-GaAs(100) in H_2SO_4 Solution Determined by in situ surface X-ray Absorption Fine Structure Spectra" Chemistry Letter. 8. 761-762 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uosaki: "Structure Study of Electrochemically Deposited Cooped on P-GaAS (001) by Atomic Force Microscopy and Surface X-ray Absorption Fire structure Measurement" Applied surface science. 121/122. 102-106 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Wei: "Local Structures of Isovalent and Metrovalent Dilute Impurities in si Crystal Probed by Fluorescence X-ray Absorption Fire Structure" Journal of Applied Physics. 82. 4810-4815 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Scherb: "In Situ X-ray Standing-wave Analysis of Electrodeposited Cu Monolayers on GaAs (001)" Physical Review B. 58・16. 10800-10805 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Uosaki, et al.: "In Situ Observation of the Anodic Dissolution Process of p-GaAs (100) in HCL Solution by Surface X-ray Diffraction." Journal of Electroanalytical Chemistry. 429. 13-17 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kondo, et al.: "Coverage Dependant Structure of Electrochemically Deposited Cu on p-GaAs (100) in H_2SO_4 Solution Determined by In Situ Surface X-ray Absorption Fine Structure Spectra." Chemistry Letters. No.8. 761-762 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Uosaki, et al.: "Structure Study of Electrochemically Deposited Copper on p-GaAs (001) by Atomic Force Microscopy and Surface X-ray Absorption Fine Structure Measurement." Applied Surface Science. 121/122. 102-106 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Wei, et al.: "Local Structures of Isovalent and Heterovalent Dilute Impurities in Si Crystal Probed by Fluorescence X-ray Absorption Fine Structure." Journal of Applied Physics. 82. 4810-4815 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Scherb, et al.: "In Situ X-ray Standing-wave Analysis of Electrodeposited Cu Monolayers on GaAs (001)." Physical Review B. 58, No.16. 10800 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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