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1998 Fiscal Year Final Research Report Summary

STUDY OF HEAT AND MASS TRANSPORT PHENOMENA IN CRYSTAL GROWTH

Research Project

Project/Area Number 09044123
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research Field Inorganic materials/Physical properties
Research InstitutionINSTITUTE FOR MATERIALS RESEARCH,TOHOKU UNIVERSITY

Principal Investigator

FUKUDA Tsuguo  TOHOKU UNIV., IMR,PROFESSOR, 金属材料研究所, 教授 (30199236)

Co-Investigator(Kenkyū-buntansha) GANSCHOW Steffen  IKZ,GERMANY,RESEARCHER, 結晶成長研究所, 研究員
EPELBAUM Boris  IKZ,GERMANY,RESEARCHER, 結晶成長研究所, 研究員
SCHRODER Winfried  IKZ,GERMANY,DIRECTOR, 結晶成長研究所, 所長
MULLER Georg  ERLANGEN-NURMBERG UNIV., PROFESSOR, ErlangenーNurmberg大学, 教授
SHIMAMURA Kiyoshi  TOHOKU UNIV., IMR,RESEARCH ASSOCIATE, 金属材料研究所, 助手 (90271965)
Project Period (FY) 1997 – 1998
Keywordscrystal growth / bulk single crystal / heat and mass transport phenomena / fluoride single crystal / oxide single crystal / distribution phenomena / semiconductor single crystal / dislocation
Research Abstract

Following the recent progress of technology, crystal materials with better quality and improved properties are strongly demanded. In order to realize technological break-throughs in this area, understanding of several phenomena relating to the crystal growth process, especially mass and heat transport phenomena, is most important. In this work, the investigation of heat and mass transport phenomena, and the pursuit of means to control them, have been carried out.
The following topics have been mainly investigated by exchanging researchers between Japan and Germany.
・ heat and mass transport phenomena accompanied with semiconductor crystal growth by the LEC, MCZ and FZ technique,
・ distribution of impurities and dopants during the growth of oxide and fluoride single crystals,
In all, 6 researchers from Japan visited Germany and 7 researchers from Germany visited Japan over the two years of exchanges.
One of the most successful results was the growth of fluoride single crystals and the development of the needed crystal growth technology. Although the growth of fluorides has been recognized as difficult because of the use of highly toxic HF gases, we have successfully grown a series of high-quality Corquillite-type crystals, such as Ce : LiSAF and Ce : LiSAF.Grown Ce : LiCAF crystals showed 60 mJ laser output energy in the UV wavelength region. This is the highest power ever reported.
By this international collaboration, we have successfully established stronger international relations for research. This led us to hold the "Japan-Germany Meeting for Crystal Growth" in the beginning of 1998. Since this meeting was well-received, the 2nd meeting including Poland is now being planned for the beginning of 1999.
This research work also allowed us to invite Prof.Peter Rudolph, IKZ, and Dr.Boris Epelbaum, IKZ, as visiting professor and visiting associate professor, respectively, at the Institute for Materials Research, Tohoku University, each for 3 months.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] B.M.Epelbaum,他7名: "Edge-Defined Film-Fed (EFC) Growth of Rare-Earth Orthovanadates REVO_4 (RE=Y.Gd) : Interface Morphology Effect on Crystal Shape and Materials Properties" Journal of Crystal Growth. Vol.186. 607-611 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Z.Liu,他7名: "High-Pulse-Energy, All-Solid-State, Ultraviolet Laser Oscillator Using Large Czochralski-Crown Ce : LiCAF Crystal" Japanese Journal of Applied Physics. Vol.37. L1318-L1319 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shimamura, 他4名: "Growth and Characterization of (La, Sr) (Al, Ta)O_3 Single Crystals as Substrates for GaN Epitaxial Growth" Journal of Crystal Growth. Vol.194. 209-213 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shimamura, 他4名: "Growth of Gd-Yb-Ga Garnet Single Crystals with Large Lattice Parameters as Substrates for Optical Isolators" Journal of Crystal Growth. Vol.194. 203-208 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Takeda, 他3名: "Effect of starting Melt Composition on Crystal Growth of La_3Ga_5SiO_<14>" Journal of Crystal Growth. Vol.197. 204-209 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Tomonari, 他5名: "Standing-oscillatory Natural Convection Computed for Molten Silicon in Czochralski Configuration" The Chemical Engineering Journal. Vol.71. 191-200 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.M.Epelbaum, et al.: "Edge-Defined Film-Fed (EFG) Growth of Rare-Earth Orthovanadates REVO^4 (RE=Y,Gd) : Interface Morphology Effect on Crystal Shape and Materials Properties" Journal of Crystal Growth. Vol.186. 607-611 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Z.Liu, et al.: "High-Pulse-Energy, All-Solid-State, Ultraviolet Laser Oscillator Using Large Czochralski-Grown Ce : LiCAF Crystal" Japanese Journal of Applied Physics. Vol.37. L1318-L1319 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shimamura, et al.: "Growth and Characterization of (La, Sr)(Al, Ta)O_3 Single Crystals as Substrates for GaN Epitaxial Growth" Journal of Crystal Growth. Vol.194. 209-213 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shimamura, et al.: "Growth of Gd-Yb-Ga Garnet Single Crystals with Large Lattice Parameters as Substrates for Optical Isolators" Journal of Crystal Growth. Vol.194. 203-208 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Takeda, et al.: "Effect of starting Melt Composition on Crystal Growth of La_3Ga_5SiO_<14>" Journal of Crystal Growth. Vol.197. 204-209 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Tomonari, et al.: "Standing-oscillatory Natural Convection Computed for Molten Silicon in Czochralski Configuration" The Chemical Engineering Journal. Vol.71. 191-200

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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