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1998 Fiscal Year Final Research Report Summary

Negative Electron Affinity Photocathodes on Non- (001) Surfaces

Research Project

Project/Area Number 09044152
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research Field Applied materials science/Crystal engineering
Research InstitutionShizuoka University

Principal Investigator

MINAKATA Makoto  Shizuoka Univ., Research Institute of Electronics, Professor, 電子工学研究所, 教授 (80174085)

Co-Investigator(Kenkyū-buntansha) パリー G.  ロンドン大学, インペリアルカレッジ, 教授
ジョイス B.A.  ロンドン大学, インペリアルカレッジ, 教授
NOMURA Takashi  Shizuoka Univ., Research Institute of Electronics, Research Associate, 電子工学研究所, 助手 (90172816)
ISHIKAWA Kenji  Shizuoka Univ., Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (50022140)
JOYCE Bruce A.  University of London, Professor
PARRY Gareth  University of London, Professor
Project Period (FY) 1997 – 1998
Keywordsoptoelectronic device / negative electron affinity / molecular beam epitaxy / scanning tunneling microscope / mesa patterned substrate / InGaAs / GaAs / multi quantum well / in situ observation
Research Abstract

Negative electron affinity (NEA) photocathodes have high sensitivity in a wide range of wavelength, and are practically Important. There are strong demands for sensitivity and lifetime improvements. In this research project, new NEA photocathode formed on high index surfaces and structure of the NEA surface are examined. In addition to (001) surface conventionally used for NEA GaAs photocathodes, GaAs photocathodes are fabricated on (111)A and (311)A surfaces. As a result, a critical temperature is found in heat cleaning process, and higher sensitivity is obtained on non-(001) surfaces. In order to investigate the surface structure of NEA substrates, growth by MBE and ex situ, atomic scale imaging by STM are carried out using MBE-STM combined system in Imperial College, University of London. Based on the experience, the characteristic terrace structures on (111)A and (311)A are clearly observed by our own made MBE-STM system. Clarification of the surface structure and NEA mechanism wou … More ld contribute to further improvements of NBA photocathodes.
In addition to the collaboration on NBA photocathodes on high index surfaces, we found out common interest on opto-electronic device fabrication, which has been studied independently in both institutes, especially semiconductor laser with quantum structure. As a basic research of opto-electronic device fabrication, we have grown InGaAs/GaAs multi quantum well (MQW) structure using molecular beam epitaxy (MBE). The maximum PL intensity is obtained for the sample grown under V/III = 3.8. Growth and evaluation on our patterned susbstares by STM-MBE combined system In Imperial College indicates potentialities of the atomic scale In-situ observation on prepatterned substrates. We have also shown the formation of pyramid structures on the square mesa by the growth of MBB.The above mentioned results, we believe, are the first step for opto-electronic device application and worth carrying a stage further. Professor Joyce have suggested us to extend our collaborative activities. Less

  • Research Products

    (36 results)

All Other

All Publications (36 results)

  • [Publications] 皆方 誠: "光導波路" 光学. 26・4. 206-210 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "LiNbO_3 Broad-band OpticalModulators" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 175-178 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nomura: "InGaAs/GaAs Multi Quantum Well Grown by Molecular Beam Epitaxy" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 103-106 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方,誠: "完全速度整合超高速LiNbO_3裏溝付き光変調器" 静岡大学電子工学研究所研究報告. 32. 33-40 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "完全速度整合超高速LiNbO_3リッジ型光変調器" 静岡大学電子工学研究所研究報告. 32. 41-48 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "電子ビーム分極反転法による反転しきい値と点列形状形成の検討" 静岡大学電子工学研究所研究報告. 32. 49-57 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "New Method of Domain Inversion for High-efficency SHG Blue Light Source" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 161-164 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Zhong: "Study of Domain Inversion on LiTaO_3/LiNbO_3 Quasi-phase Matching Second Harmonic Generation Device" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 165-168 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "The Parfect Velocity Matched High Speed LiNbO_3 Optical Modulators with an Etched Back Slot" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 194-197 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "Optical directional copler switch with domain inversion" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 202-205 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nomura: "Fabrication and characteristic of InGaAs/GaAs MQW grown by MBE" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 206-209 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nomura: "Effect of pattern size on fine structure formed on GaAs(001)" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 210-213 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "Observation of Domain Inversion by Coherent Detection" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 245-248 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "分極反転を用いた方向性結合型光スイッチに関する研究" 静岡大学電子工学研究所研究報告. 33. 61-68 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "Coherent Detection法による分極構造の観察" 静岡大学電子工学研究所研究報告. 33. 69-76 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "高効率SHG青色光源を目指した新しい分極反転法" 静岡大学電子工学研究所研究報告. 33. 77-84 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 野村 卓志: "MBE法によるInGaAs/GaAs MQW作製と評価" 静岡大学電子工学研究所研究報告. 33. 85-89 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 皆方 誠: "マイクロオプトメカトロニクスハンドブック(分担執筆)非線形光学材料" 朝倉書店, 8 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Minakata: "Optical Waveguide" Japanese Journal of Optics. 26,4. 206-210 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "LiNbO_3 Broad-band Optical Modulators" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 175-178 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nomura: "InGaAs/GaAs Multi Quantum Well Grown by Molecular Beam Epitaxy" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 103-106 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Micro Opt-Mechatoronics Handbook (part)" Asakura Publishing, 8 pages (64-71). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "The Perfect Velocity Matched High Speed LiNbO_3 Optical Modulators with an Etched Back Slot" Bulletin of the Research Institute of Electronics, Shizuoka University. 32. 33-40 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "The Perfect Velocity Matched High Speed LiNbO_3 Ridge Type Optical Modulators" Bulletin of the Research Institute of Electronics, Shizuoka University. 32. 41-48 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Study on Threshold of Domain Inversion and Dotted Inversion Domain Line Formation by Electron Beam Irradiation" Bulletin of the Research Institute of Electronics, Shizuoka University. 32. 49-57 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "New Method of Domain Inversion for High-efficiency SHG Blue Light Source" Proceedings of Joint Int.1 Conf. on Advanced Science and Technology. 161-164 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Zhong: "Study of Domain Inversion on LiTaO_3/LiNbO_3 Quasi-phase Matching Second Harmonic Generation Device" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 165-168 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "The Perfect Velocity Matched High Speed LiNbO_3 Optical Modulators with an Etched Back Slot" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 194-197 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Optical Directional Coupler Switch with Domain Inversion" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 202-205 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nomura: "Fabrication and Characteristic of InGaAs/GaAs MQW Grown by MBE" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 206-209 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nomura: "Effect of Pattern Size on Fine Structure Formed on GaAs (001)" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 210-213 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Observation of Domain Inversion by Coherent Detection" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 245-248 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Optical Directional Coupler Switch with Domain Inversion" Bulletin of the Research Institute of Electronics, Shizuoka University. 61-68 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "Coherent Detection for Observation of Domain Inversion" Bulletin of the Research Institute of Electronics, Shizuoka University. 33. 69-76 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Minakata: "New Method of Domain Inversion for High-Efficiency SHG Blue Light Source" Bulletin of the Research Institute of Electronics, Shizuoka University. 33. 77-84 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nomura: "Fabrication and Characteristic of InGaAs/GaAs MQW Grown by MBE" Bulletin of the Research Institute of Electronics, Shizuoka University. 33. 85-90 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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