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2000 Fiscal Year Final Research Report Summary

Electronic Properties of Spin Controlled Semiconductor Nanostructures

Research Project

Project/Area Number 09244103
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionTohoku University

Principal Investigator

OHNO Hideo  Research Institute of Electrical Communication, Tohoku University Professor, 電気通信研究所, 教授 (00152215)

Co-Investigator(Kenkyū-buntansha) TARUCHA Seigo  Department of Physical, University of Tokyo, Professor, 大学院・理学系研究科, 教授 (40302799)
SUZUKI Naoshi  Department of Physical Science, Graduate School of Engineering Science, Osaka University, Professor, 大学院・基礎工学研究科, 教授 (40029559)
KATSUMOTO Shingo  Institute for Solid Physics, University of Tokyo, Professor, 物性研究所, 助教授 (10185829)
Project Period (FY) 1997 – 1999
KeywordsDiluted magnetic semiconductor / ab initio calculation / spin / Spin relaxation / Artificial atom / Metal / insulator transition / Giant magnetoresistance / Kondo effect
Research Abstract

This group was formed to study and elucidate the electronic structure and the transport properties of spin-controlled semiconductoring materials and nanostructures. To this end, the growth and processing of ferromagnetic semiconductors and their related heterostructures, transport/magnetic/optical properties of these materials and structures, and the electronic structure calculation as well as the theory of transport properties were investigated. The summary of the research results is :
1. Ferromagnetic/non-magnetic trilayer structures made of semiconductor showed spin-dependent scattering, interlayer coupling and tunneling magnetoresistance. Resonant tunneling diodes with (Ga, Mn) As emitter exhibited spontaneous current peak splitting below the ferromagnetic transition temperature. Also electrical spin-injection from ferromagnetic (Ga, Mn) As into a nonmagnetic GaAs structure was demonstrated. (H.Ohno et al.)
2. Magnetism and transport in (In, Mn) As and (Ga, Mn) As at low temperature was studied. One of our important finding is that crystalline quality is much improved by heat treatment at comparatively low temperature. Soft X-ray absorption experiment is making it clear that the improvement is due to the evaporation of excess As atoms. (S.Katsumoto et al.)
3. First-principle electronic band-structure calculations are carried on III-V based diluted magnetic semiconductors (Ga, Mn) As. The magnetic interactions between the nearest neighboring 3d transition-metal spins are ferromagnetic for V, Cr, Mn. (N.Suzuki et al.)
We have prepared an artificial atom/molecular having a high-degree of rotational symmetry. For artificial atom, (i) atom-like properties such as shell filling and obeisance of Hund's rule and (ii) various transitions of spin states as a function of magnetic field have been observed. For artificial molecules we have investigated novel spin effects such as spin blockade, isospin blockade, spin-dependent tunneling, and so on. (Tarucha et al.)

  • Research Products

    (198 results)

All Other

All Publications (198 results)

  • [Publications] H.Yasuda: "Arsenic flux dependence of InAs nanostructure formation on GaAs (211) B surface"Applied Surface Science. 166. 413-417 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Yang: "Surface morphologies of III-V based magnetic semiconductor (Ga, Mn) As grown by molecular beam epitaxy"Applied Surface Science. 166. 242-246 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Chiba: "Magnetoresistance effect and interlayer coupling of (Ga, Mn) As trilayer structures"Applied Physics Letters. 77. 1873-1875 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Ferromagnetic III-V heterostructures"J.Vac.Sci.Technol.B. 18. 2039-2043 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shono: "Observation of magnetic domain structure in a feromagnetic semiconductor (Ga, Mn) As with a scannin Hall probe microscope"Applied Physics Letters. 77. 1363-1365 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga, Mn) As"Applied Surface Science. 159-160. 308 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Molecular beam epitaxy of GaSb with high concentration of Mn"Applied Surface Science. 159-160. 265 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Adachi: "Mobility dependence of electron spin relaxation time in n type InGaAs/InAlAs multiple quantum wells"Physica E. 7. 1015 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] E.Abe: "Molecular Beam Epitaxy of III-V Diluted Magnetic Semiconductor (Ga, Mn) Sb"Physica E. 7. 981 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohldag: "Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98 Mn0.02) As"Applied Physics Letters. 76. 2928-2930 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Dietl: "Ferromagnetizm induced by free carriers in p-type structures of diluted magnetic semiconductors"Physica E. 7. 967 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Omiya: "Magnetotransport properties of (Ga, Mn) As investigated at low temperature and high magnetic field"Physica E. 7. 976 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotransport properties of (Ga, Mn) Sb"Journal of Applied Physics. 87. 6442 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Akiba: "Spin-dependent scattering in semiconducting ferromagnetic (Ga, Mn) As trilayer structures"Journal of Applied Physics. 87. 6436 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Electron Spin Relaxation Beyond D'yakonov-Perel' Interaction in GaAs/AlGaAs Quantum Wells"Physica E. 6. 817 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hideo Ohno: "Ferromagnetism and heterostructures of III-V magnetic semiconductors"Physica E. 6. 702 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sawada: "Bilayer n=2 quantum Hall state in parallel high magnetic field"Physica E. 6. 615 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Dietl: "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors"Science. 287. 1019 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sawada: "Bilayer v=2 quantum Hall state in parallel high magnetic field"Physica E. 6. 615-618 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "Surfactant effect of Mn on the formation of self-organized InAs nanostructures"Journal of Crystal Growth. 208. 799 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Electrical spin injection in a ferromagentic semiconductor heterostructures"Nature. 402. 790 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Spin relaxation in GaAs (110) quantum wells"Physical Review Letters. 83. 4196 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Properties of ferromagnetic III-V semiconductors"Journal of Magnetism and Magnetic Materials. 200. 110 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B.Beschoten: "Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in (Ga1-xMnx) As"Physical Review Letters. 83. 3073 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Iye: "Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors"Materials Science and Engineering B. 63. 88 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sawada: "Interlayer coherence in (=1 and (=2 bilayer quantum Hall states"Physical Review B. 59. 14888 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Haruyuki Yasuda: "Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs"Applied Physics Letters. 74. 3275 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Mid-infrared intersubband electroluminescence in InAs/AlSb cascade structures"Electronics Letters. 35. 935 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Low-temperature molecular beam epitaxial growth of GaAs and (Ga, Mn) As"Journal of Crystal Growth. 201-202. 679 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "InAs and (In, Mn) As nanostructures Grown on GaAs (100),(211) B, and (311) B Substrates"Journal of Crystal Growth. 201-202. 684 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sato: "X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy"Journal of Crystal Growth. 201-202. 861 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Szczytko: "Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers"Physical Review B. 59. 12935 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Spin-dependent tunneling and properties of ferromagnetic (Ga, Mn) As"Journal of Applied Physics. 85. 4277 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Terauchi: "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells"Japanese Journal of Applied Physics. 38. 2549 (1999)

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      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Intersubband electroluminescence in InAs/GaSb/AlSb type II cascade structures"Applied Physics Letters. 74. 1409 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In, Mn) As/(Ga, Al) Sb"Physical Review B. 59. 5826 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "III-V based ferromagnetic semiconductors"Journal of Magnetics Society of Japan. 23. 88 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotransport properties of (Ga, Mn) As/GaAs/(Ga, Mn) As trilayer structures"Journal of Magnetics Society of Japan. 23. 99 (1999)

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      「研究成果報告書概要(和文)」より
  • [Publications] J.G.E.Harris: "Integrated micromechanical cantilever megnetometry of Ga1-xMnxAs"Applied Physics Letters. 75. 1140-1142 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kishimoto: "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime"Physica B. 256. 535 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Akiba: "Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga, Mn) As"Physica B. 256-258. 561 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.H.Matsuda: "Cyclotron resonance in Cd1-xFexS and Ga1-xMnxAs at megagauss magnetic fields"Physica B. 256-258. 565 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Nojiri: "ESR study of Mn doped II-VI and III-V DMS"Physica B. 256-258. 569 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotransport properties of all semiconductor (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As tri-layer structures"Physica B. 256-258. 573 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Akiba: "Interlayer exchange in (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures"Applied Physics Letters. 73. 2122 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Spontaneous splitting of ferromagnetic (Ga, Mn) As observed by resonant tunneling spectroscopy"Applied Physics Letters. 73. 363 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Keita Ohtani: "Well width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers"Physica E. 2. 200 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "InAs quantum dots and dashes grown on (100),(211) B, and (311) B GaAs substrates"Physica E. 2. 672 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Ferromagnetic (Ga, Mn) As and its heterostructures"Physica E. 2. 904 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "n=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well"Solid-State Electronics. 42. 1183 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kishimoto: "Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems"Solid-State Electronics. 42. 1187 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Low-temperature conduction and giant negative magnetoresistance in III-V based diluted magnetic semicondcutor : (Ga, Mn) As/GaAs"Physica B. 249-251. 775 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn) As"Physica B. 249-251. 809 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sawada: "Interlayer quantum coherence and anomalous stability of n=1 bilayer quantum Hall state"Physica B. 249-251. 836 (1998)

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      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Making nonmagnetic semiconductor magnetic"Science. 281. 951 (1998)

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      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure : A reflection high-energy electron diffraction study"Applied Surface Science. 130-132. 382 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "Self-organized (In, Mn) As diluted magnetic semiconductor nanostructures on GaAs substrates"Applied Surface Science. 130-132. 797 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "InAs self-organized quantum dashes grown on GaAs (211) B"Appl.Phys.Lett.. 70. 2738 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sawada: "Phase transition in the n=2 bilayer quantum Hall state"Physical Review Letters. 80. 4534 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shiping Guo: "Photoluminescence study of InAs quantum dots and quantum dashes on GaAs (211) B"Japanese Journal of Applied Physics. 37. 1527 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kuroiwa: "Faraday rotation of ferromagnetic (Ga, Mn) As"Electronics Letters. 34. 190 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Transport properties and origin of ferromagnetism in (Ga, Mn) As"Physical Review B. 57. 2037 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Giant negative magnetoresistance of (Ga, Mn) As/GaAs in the vicinity of a metal-insulator transition"phys.stat.sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Katsumoto: "Strongly anisotropic hoppins conduction in (Ga, Mn) As/GaAs"phys.stat.sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Magnetotransport and magnetic properties of (Ga, Mn) As and its heterostructures"Acta Physica Polonica A. 94. 155 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure"Appl.Phys.Lett.. 71. 1540 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Preparation and properties of III-V based new diluted magnetic semiconductors"Advances in Colloid and Interface Science. 71-72. 61 (1997)

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  • [Publications] A.Oiwa: "Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn) As/GaAs"Solid State Communications. 103. 209 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs"Journal of Crystal Growth. 175-176. 1069 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells"Applied Surface Science. 113-114. 90 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Growth and properties of (Ga, Mn) As : a new III-V diluted magnetic semiconductor"Applied Surface Science. 113-114. 178 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures"Applied Surface Science. 113-114. 183 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Staircase Like Hysteresis Loop in Compound Diluted Magnetic Semiconductor (In, Mn) As at Low Temrperatures"Physica B. 284. 1173 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Iye: "Metal-Insulator Transition and Magnetotransport in III-V Compound Diluted Magnetic Semiconductors"Mat.Sci.and Eng.B. 63. 88 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Magnetic and Transport Properties of the Ferromagnetic Semiconductor Heterostructures (In, Mn) As/(Ga, Al) Sb"Phys.Rev.B. 59. 5826 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Anomalous giant Barkhausen jumps in III-V based diluted magnetic semiconductor (In, Mn) As at low temperatures"Quantum Coherence and Decoherence (eds.Y.A.Ono and K.Fujikawa, North Holland). 177-180 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotranport Properties of (Ga, Mn) As/GaAs/(Ga, Mn) As Trilayer Structures"J.Mag.Soc.Jpn.. 23. 23 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotransport Properties of All Semiconductor (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As Tri-Layer Structures"Physica B. 256-258. 573 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Akiba: "Interlayer Exchange in (Ga, Mn) As/(Al, Mn) As/(Ga, Mn) As Semiconducting Ferromagnet / Nonmagnet / Ferromagnet Structures"Appl.Phys.Lett.. 73. 2122-2124 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Ferromagnetism of (Ga, Mn) As/GaAs under Hydrostatic Pressure"Physics and Applications of Spin-Related Phenomena in Semiconductors.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Low Temperature Conduction and Giant Negative Magnetoresistance in III-V Based Diluted Magnetic Semiconductor : (Ga, Mn) As/GaAs"Physica B. 249-251. 775 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Katsumoto: "Strongly Anisotropic Hoppins Conduction in (Ga, Mn) As/GaAs"Phys.Stat.Sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Oiwa: "Giant Negative Magnetoresistance of (Ga, Mn) As/GaAs in the Vicinity of a Metal-Insulator Transition"Phys.Stat.Sol.(b). 205. 167 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Epitaxy of (Ga, Mn) As, a New Diluted Magnetic Semiconductor Based on GaAs"J.Crystal Growth. 175-176. 1069 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Epitaxy and Properties of InMnAs/AlGaSb Diluted Magnetic III-V Seimiconductor Heterostructures"Appl.Surf.Sci.. 113-114. 183 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Growth and Properties of (Ga, Mn) As : A New III-V Diluted Magnetic Semiconductors"Appl.Surf.Sci.. 113-114. 178 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Shirai: "First-Principles Electronic Structure Calculations of MnAs/GaAs (001) Magnetic Multilayers"Jpn.J.Appl.Phys.. 38. 423 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ogawa: "First-Principles Calculations of Electronic Structures of Diluted Magnetic Semiconductors (Ga, Mn) As"J.Mag. & Mag.Mater.. 196-197. 428 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Shirai: "Band Structure of Zinc-Blende Ttype MnAs and (MnAs)1(GaAs)1 Superlattice"J.Mag. & Mag.Mater.. 177-181. 1383 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fujisawa: "Photon assisted tunneling spectroscopy on a double quantum dot"Inst.Phys.Conf.Ser., 162 (Proc.of 25th Int.Symp. Compund Semiconductors, Nara, Japan). 162. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ohtani: "Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structure"Physica E. 7. 80 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Wang: "Magnetotransport studies of-AlGaN/GaN heterostructures grown on sapphire substrates : Effective mass and scattering time"Applied Physics Letters. 76. 2737 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shono: "Magnetic domain structures of (Ga, Mn) As investigated by scaning Hall probe microscopy"Physica B. 284. 1125 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Wang: "Electron mobility exceeding 104 cm2/V s in an AlGaN-GaN heterostructure grown on a sapphire substrate"Applied Physics Letters. 74. 3531 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Tsuruoka: "Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope"Applied Physics Letters. 73. 1544 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hayashi: "Anisotropy and Barkhausen Jumps in Diluted Magnetic Semiconductor (Ga, Mn) As"Physica B. 284. 1175 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Mayumi Kato: "Electron-electron scattering in two-dimensional electron gas under a controllable spatially modulated magnetic field"Physica E. 6. 735 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Mayumi Kato: "Electron-electron umklapp scattering in two-dimensional electron gas under lateral magnetic periodicity"Physica B. 284. 1902 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hashimoto: "Spin Diffusion Length and Giant Magnetoresistance in Spin-Valve Tri-layers"Physica B. 284. 1247 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yasuda, F.Matsukura, Y.Ohno and H.Ohno: "Arsenic flux dependence of InAs nanostructure formation on GaAs (211) B surface"Applied Surface Science. Vol.166, Issues 1-4. 413-417 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Yang, H.Yasuda, S.Wang, F.Matsukura, Y.Ohno and H.Ohno: "Surface morphologies of III-V based magnetic semiconductor (Ga, Mn) As grown by molecular beam epitaxy"Applied Surface Science. Vol.166, Issues 1-4. 242-246 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Chiba, N.Akiba, F.Matsukura, Y.Ohno, and H.Ohno: "Magnetoresistance effect and interlayer coupling of (Ga, Mn) As trilayer structures"Applied Physics Letters. Vol.77, Issue 12. 1873-1875 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "Ferromagnetic III-V heterostructures"J.Vac.Sci.Technol.B. Vol.18, No.4. 2039-2043 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shono and T.Hasegawa, T.Fukumura, F.Matsukura and H.Ohno: "Observation of magnetic domain structure in a feromagnetic semiconductor (Ga, Mn) As with a scanning Hall probe microscope"Applied Physics Letters. 77. 1363 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, I.Arata, F.Matsukura, K.Ohtani, S.Wang, and H.Ohno: "MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga, Mn) As"Applied Surface Science. 308. 159-160 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, E.Abe, Y.Ohno, and H.Ohno: " Molecular beam epitaxy of GaSb with high concentration of Mn"Applied Surface Science. 265. 159-160 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Adachi, Y.Ohno, R.Terauchi, F.Matsukura, and H.Ohno: "Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells"Physica E. 7. 1015 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] E.Abe, F.Matsukura, H.Yasuda, Y.Ohno, and H.Ohno: "Molecular Beam Epitaxy of III-V Diluted Magnetic Semiconductor (Ga, Mn) Sb"Physica E. 7. 981 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohldag, V.Solinus, F.U.Hillebrecht, J.B.Goedkoop, M.Finazzi, F.Matsukura, and H.Ohno: "Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02) As"Applied Physics Letters. 76. 2928-2930 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Dietl, J.Cibert, P.Kossacki, D.Ferrand, S.Tatarenko, A.Waisiela, Y.Merle D'aubigne, F.Matsukura, N.Akiba, and H.Ohno: "Ferromagnetizm induced by free carriers in p-type structures of diluted magnetic semiconductors"Physica E. 7. 967 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Omiya, F.Matsukura, T.Dietl, Y.Ohno, T.Sakon, M.Motokawa, and H.Ohno: "Magnetotransport properties of (Ga, Mn)As investigated at low temperature and high magnetic field"Physica E. 7. 976 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, E.Abe, and H.0hno: "Magnetotransport properties of (Ga, Mn) Sb"Journal of Applied Physics. 87. 6442 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Akiba, D.Chiba, K.Nakata, F.Matsukura, Y.Ohno, and H.Ohno: "Spin-dependent scattering in semiconducting ferromagnetic (Ga, Mn) As trilayer structures"Journal of Applied Physics. 87. 6436 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, R.Terauchi, T.Adachi, F.Matsukura, and H.Ohno: "Electron Spin Relaxation Beyond D'yakonov-Perel' Interaction in GaAs/AlGaAs Quantum Wells"Physica E. 6. 817 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hideo Ohno: "Ferromagnetism and heterostructures of III-V magnetic semiconductors"Physica E. 6. 702 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, N.Kumada, Y.Ohno, S.Kishimoto, F.Matsukura, and S.Nagahama: "Bilayer n=2 quantum Hall state in parallel high magnetic field"Physica E. 6. 615 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Dietl, H.Ohno, F.Matsukura, J.Cibert, and D.Ferrand: "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors"Science. 287. 1019 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, N.Kumada, Y.Ohno, S.Kishimoto, F.Matsukura and S.Nagahama: "Bilayer v=2 quantum Hall state in parallel high magnetic field"Physica E. 6. 615-618 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P.Guo, A.Shen, H.Yasuda, Y.Ohno, F.Matsukura, and H.Ohno: "Surfactant effect of Mn on the formation of self-organized InAs nanostructures"Journal of Crystal Growth. 208. 799 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, D.K.Young, B.Beschoten, F.Matsukura, H.Ohno, and D.D.Awschalom: "Electrical spin injection in a ferromagentic semiconductor heterostructures"Nature. 402. 790 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, R.Terachi, T.Adachi, F.Matsukura, and H.Ohno: "Spin relaxation in GaAs (110) quantum wells"Physical Review Letters. 83. 4196 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "Properties of ferromagnetic III-V semiconductors"Journal of Magnetism and Magnetic Materials. 200. 110 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.Beschoten, P.A.Cowell, I.Malajovich, D.D.Awschalom, F.Matsukura, A.Shen, and H.Ohno: "Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in (Ga1-xMnx) As"Physical Review Letters. 83. 3073 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Iye, A.Oiwa, A.Endo, S.Katsumoto, F.Matsukura, A.Shen, H.Ohno, H.Munekata: "Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors"Materials Science and Engineering B. 63. 88 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, A.Urayama, Y.Ohno, S.Kishimoto, F.Matsukura, and N.Kumada: "Interlayer coherence in ( = 1 and ( = 2 bilayer quantum Hall states"Physical Review B. 59. 14888 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Haruyuki Yasuda and Hideo Ohno: "Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth"Applied Physics Letters. 74. 3275 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani and H.Ohno: "Mid-infrared intersubband electroluminescence in InAs/AlSb cascade structures"Electronics Letters. 35. 935 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, F.Matsukura, S.P.Guo, Y.Sugawara, H.Ohno, M.Tani, H.Abe, and H.C.Liu: "Low-temperature molecular beam epitaxial growth of GaAs, and (Ga, Mn) As"Journal of Crystal Growth. 679. 201-202 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P.Guo, A.Shen, F.Matsukura, Y.Ohno, and H.Ohno: "InAs and (In, Mn) As nanostructures Grown on GaAs (100), (211) B, and (311) B Substrates"Journal of Crystal Growth. 684. 201-202 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sato, K.Ohtani, R.Terauchi, Y.Ohno, F.Matsukura, and H.Ohno: "X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy"Journal of Crystal Growth. 861. 201-202 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Szczytko, W.Mac, A.Twardowski, F.Matsukura, and H.Ohno: "Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers"Physical Review B. 59. 12935 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno, F.Matsukura, T.Omiya, and N.Akiba: "Spin-dependent tunneling and properties of ferromagnetic (Ga, Mn) As"Journal of Applied Physics. 85. 4277 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Terauchi, Y.Ohno, T.Atachi, A.Sato, F.Matsukura, A.Tackeuchi, and H.Ohno: "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells"Japanese Journal of Applied Physics. 38. 2549 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ohtani and H.Ohno: "Intersubband electroluminescence in InAs/GaSb/AlSb type II cascade structures"Applied Physics Letters. vol.74. 1409 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, A.Endo, S.Katsumoto, Y.Iye, H.Ohno, and H.Munekata: "Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In, Mn) As/(Ga, Al) Sb"Physical Review B. 59. 5826 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "III-V based ferromagnetic semiconductors"Journal of Magnetics Society of Japan. 23. 88 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, N.Akiba, A.Shen, Y.Ohno, A.Oiwa, S.Katsumoto, Y.Iye, and H.Ohno: "Magnetotransport properties of (Ga, Mn) As/GaAs/(Ga, Mn) As trilayer tructures"Journal of Magnetics Society of Japan. 23. 99 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] *.G.E.Harris, D.D.Awshalom, F.Matsukura, H.Ohno, K.D.Maranowski, and A.C.Gossard: "Integrated micromechanical cantilever megnetometry of Ga1-xMnxAs"Applied Physics Letters. 75. 1140-1142 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kishimoto, Y.Ohno, F.Matsukura and H.Ohno: "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime"Physica B. 256. 535 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Akiba, F.Matsukura, Y.Ohno, A.Shen, K.Ohtani, T.Sakon, M.Motokawa, and H.Ohno: "Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga, Mn) As"Physica B. 561. 256-258 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.H.Matsuda, H.Arimoto, N.Miura, A.Twardowski, H.Ohno, A.Shen, and F.Matsukura: "Cyclotron resonance in Cd1-xFexS and Ga1-xMnxAs at megagauss magnetic fields"Physica B. 565. 256-258 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nojiri, M.Motokawa, S.Takeyama, F.Matsukura, and H.Ohno: "ESR study of Mn doped II-Vl and III-V DMS"Physica B. 569. 256-258 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, N.Akiba, A.Shen, Y.Ohno, A.Oiwa, S.Katsumoto, Y.Iye, and H.Ohno: "Magnetotransport properties of all semiconductor (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As tri-layer structures"Physica B. 573. 256-258 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Akiba, F.Matsukura, A.Shen, Y.Ohno, H.Ohno, A.Oiwa, S.Katsumoto, and Y.Iye: "Interlayer exchange in (Ga, Mn) As/(Al, Ga) As/(Ga, Mn) As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures"Applied Physics Letters. 73. 2122 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno, N.Akiba, F.Matsukura, A.Shen, K.Ohtani, and Y.Ohno: "Spontaneous splitting of ferromagnetic (Ga, Mn) As observed by resonant tunneling spectroscopy"Applied Physics Letters. 73. 363 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Keita Ohtani, Yuzo Ohno, Fumihiro Matsukura, and Hideo Ohno: "Well width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers"Physica E. 2. 200 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P.Guo, H.Ohno, A.Shen, and Y.Ohno: "InAs quantum dots and dashes grown on (100), (211) B, and (311) B GaAs substrates"Physica E. 2. 672 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno, F.Matsukura, A.Shen, Y.Sugawara, N.Akiba, and T.Kuroiwa: "Ferromagnetic (Ga, Mn) As and its heterostructures"Physica E. 2. 904 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, S.Kishimoto, F.Matsukura, M.Yasumoto, and A.Urayama: "n = 1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well"Solid-State Electronics. 42. 1183 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kishimoto, Y.Ohno, F.Matsukura, H.Sakaki, and H.Ohno: "Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems"Solid-State Electronics. 42. 1187 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, A.Endo, M.Hirasawa, Y.Iye, F.Matsukura, A.Shen, Y.Sugawara, and H.Ohno: "Low-temperature conduction and giant negative magnetoresistance in III-V based diluted magnetic semicondcutor : (Ga, Mn) As/GaAs"Physica B. 775. 249-251 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, H.Ohno, F.Matsukura, H.C.Liu, N.Akiba, Y.Sugawara, T.Kuroiwa, and Y.Ohno: "Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn) As"Physica B. 809. 249-251 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, S.Kishimoto, F.Matsukura, Y.Ohno, M.Yasumoto, and A.Urayama: "Interlayer quantum coherence and anomalous stability of n=1 bilayer quantum Hall state"Physica B. 836. 249-251 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "Making nonmagnetic semiconductor magnetic"Science. 281. 951 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, H.Ohno, Y.Horikoshi, S.P.Guo, Y.Ohno, and F.Matsukura: "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure : A reflection high-energy electron diffraction study"Applied Surface Science. 382. 130-132 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P.Guo, H.Ohno, A.Shen, F.Matsukura, and Y.Ohno: "Self-organized (In, Mn) As diluted magnetic semiconductor nanostructures on GaAs substrates"Applied Surface Science. 797. 130-132 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P.Guo, H.Ohno, A.Shen, F.Matsukura, and Y.Ohno: "InAs self-organized quantum dashes grown on GaAs (211) B"Appl.Phys.Lett.. 70. 2738 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sawada, Z.F.Ezawa, H.Ohno, Y.Horikoshi, Y.Ohno, S.Kishimoto, F.Matsukura, M.Yasumoto, A.Urayama: "Phase transition in the n=2 bilayer quantum Hall state"Physical Review Letters. 80. 4534 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shiping Guo, Hideo Ohno, Aidong Shen, Yuzo Ohno, and Fumihiro Matsukura: "Photoluminescence study of InAs quantum dots and quantum dashes on GaAs (211) B"Japanese Journal of Applied Physics. 37. 1527 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kuroiwa, F.Matsukura, A.Shen, Y.Ohno, H.Ohno, T.Yasuda, and Y.Segawa: "Faraday rotation of ferromagnetic (Ga, Mn) As"Electronics Letters. 34. 190 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, H.Ohno, A.Shen, and Y.Sugawara: "Transport properties and origin of ferromagnetism in (Ga, Mn) As"Physical Review B. 57. R2037 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, Y.Iye, H.Ohno, F.Matsukura, A.Shen, and Y.Sugawa: "Giant negative magnetoresistance of (Ga, Mn) As/GaAs in the vicinity of a metal-insulator transition"phys.stat.sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Katsumoto, A.Oiwa, A.Endo, M.Hirasawa, Y.Iye, H.Ohno, F.Matsukura, A.Shen, and Y.Sugawara: "Strongly anisotropic hopping conduction in (Ga, Mn) As/GaAs"phys.stat.sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "Magnetotransport and magnetic properties of (Ga, Mn) As and its heterostructures"Acta Physica Polonica A. 94. 155 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, Y.Horikoshi, H.Ohno, and S.P.Guo: "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure"Appl.Phys.Lett.. 71. 1540 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno: "Preparation and properties of III-V based new diluted magnetic semiconductors"Advances in Colloid and Interface Science. 71/72. 61 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, A.Endo, M.Hirasawa, H.Ohno, Y.Sugawara, A.Shen, F.Matsukura and Y.Iye: "Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn) As/GaAs"Solid State Communications. 103. 209 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, A.Oiwa, A.Endo, S.Katsumoto, Y.Iye, H.Ohno, F.Matsukura, Y.Sugawara, N.Akiba and T.Kuroiwa: "Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs"Journal of Crystal Growth. 1069. 175-176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ohno, A.Mathur, Y.Ohno, F.Matsukura, K.Ohtani, N.Akiba, T.Kuroiwa and H.Nakajima: "Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells"Applied Surface Science. 90. 113-114 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, A.Oiwa, A.Shen, Y.Sugawara, N.Akiba, T.Kuroiwa, H.Ohno, A.Endo, S.Katsumoto, and Y.Iye: "Growth and properties of (Ga, Mn) As : a new III-V diluted magnetic semiconductor"Applied Surface Science. 178. 113-114 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, F.Matsukura, Y.Sugawara, T.Kuroiwa, H.Ohno, A.Oiwa, A.Endo, S.Katsumoto, and Y.Iye: "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures"Applied Surface Science. 183. 113-114 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, A.Endo, S.Katsumoto, Y.Iye and H.Munekata: "Staircase Like Hysteresis Loop in Compound Diluted Magnetic Semiconductor (In, Mn) As at Low Temperatures"Physica B. 284. 1173 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Iye, A.Oiwa, A.Endo, S.Katsumoto, F.Matsukura, A.Shen, H.Ohno and H.Munekata: "Metal-Insulator Transition and Magnetotransport in III-V Compound Diluted Magnetic Semiconductors"Mat.Sci.and Eng.B. 63. 88 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, A.Endo, S.Katsumoto, Y.Iye, H.Ohno, and H.Munekata: "Magnetic and Transport Properties of the Ferromagnetic Semiconductor Heterostructures (In, Mn) As/(Ga, Al) Sb"Phys.Rev.B. 59. 5826 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, Y.Hashimoto, S.Katsumoto, Y.Iye and H.Munekata: "Anomalous giant Barkhausen jumps in III-V based diluted magnetic semiconductor (In, Mn) As at low temperatures"Quantum Coherence and Decoherence (eds.Y.A.Ono and K.Fujikawa, North Holland). 177-180 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, N.Akiba, A.Shen, Y.Ohno, A.Oiwa, S,Katsumoto, Y.Iye and H.Ohno: "Magnetotranport Properties of (Ga, Mn) As/GaAs/(Ga, Mn) As Trilayer Structures"J.Mag.Soc.Jpn.. 23. 99 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukra, N.Akiba, A.Shen, Y,Ohno, A.Oiwa, S.Katsumoto, Y.Iye and H.Ohno: "Magnetotransport Properties of All Semiconductor (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As Tri-Layer Structures"Physica B. 573. 256-258 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Akiba, F.Matsukura, N.A.Shen, Y.Ohno, H.Ohno, A.Oiwa, S.Katsumoto, and Y.Iye: "Interlayer Exchange in (Ga, Mn) As/(Al, Mn) As/(Ga, Mn) As Semiconducting Ferromagnet/Nonmagnet/Ferromagnet Structures"Appl.Phys.Lett.. 73. 2122-2124 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, M.Hirasawa, A.Endo and Y.Iye: "Ferromagnetism of (Ga, Mn) As/GaAs under Hydrostatic Pressure"Physics and Applications of Spin-Related Phenomena in Semiconductors.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, A.Endo, M.Hirasawa, Y.Iye, F.Matsukura, A.Shen, Y.Sugawara and H.Ohno: "Low Temperature Conduction and Giant Negative Magnetoresistance in III-V Based Diluted Magnetic Semiconductor : (Ga, Mn) As/GaAs"Physica B. 775. 249-251 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Katsumoto, A.Oiwa, Y.Iye, H.Ohno, F.Matsukura, A.Shen, and Y.Sugawara: "Strongly Anisotropic Hopping Conduction in (Ga, Mn) As/GaAs"Phys.Stat.Sol.(b). 205. 115 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Oiwa, S.Katsumoto, A.Endo, M.Hirasawa, Y.Iye, H.Ohno, F.Matsukura, A.Shen, and Y.Sugawara: "Giant Negative Magnetoresistance of (Ga, Mn) As/GaAs in the Vicinity of a Metal-Insulator Transition"Phys.Stat.Sol.(b). 205. 167 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, H.Ohno, F.Matsukura, Y.Sugawara, N.Akiba, T.Kuroiwa, A.Oiwa, A.Endo, S.Katsumoto, and Y.Iye: "Epitaxy of (Ga, Mn) As, a New Diluted Magnetic Semiconductor Based on GaAs"J.Crystal Growth. 1069. 175-176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shen, F.Matsukura, Y.Sugawara, T.Kuroiwa, H.Ohno, A.Oiwa, A.Endo, S.Katsumoto, and Y.Iye: "Epitaxy and Properties of InMnAs/AlGaSb Diluted Magnetic III-V Seimiconductor Heterostructures"Appl.Surf.Sci.. 183. 113-114 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Matsukura, A.Oiwa, A.Shen, Y.Sugawara, N.Akiba, T.Kuroiwa, H.Ohno, A.Endo, S.Katsumoto, and Y.Iye: "Growth and Properties of (Ga, Mn) As : A New III-V Diluted Magnetic Semiconductors"Appl.Surf.Sci.. 178. 113-114 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Shirai: "First-Principles Electronic Structure Calculations of MnAs/GaAs (001) Magnetic Multilayers"Jpn.J.Appl.Phys.. 38. 423 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ogawa, M.Shirai, N.Suzuki and I.Kitagawa: "First-Principles Calculations of Electronic Structures of Diluted Magnetic Semiconductors (Ga, Mn) As"J.Mag. & Mag.Mater.. 428. 196-197 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Shirai, T.Ogawa, I.Kitagawa and N.Suzuki: "Band Structure of Zinc-Blende Ttype MnAs and (MnAs) 1 (GaAs) 1 Superlattice"J.Mag. & Mag.Mater.. 1383. 177-181 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fujisawa, T H Oosterkamp, W G van der Wiel, S Tarucha, and L P Kouwenhoven: "Photon assisted tunneling spectroscopy on a double quantum dot"Inst.Phys.Conf.Ser., 162 (Proc.of 25th Int.Symp.Compund Semiconductors, Nara, Japan). Chapter9. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] *.Ohtani and H.Ohno: "Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structure"Physica E. 7. 80 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Wang, J.Bai, S.Sakai, Y.Ohno and H.Ohno: "Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates : Effective mass and scattering time"Applied Physics Letters. 76. 2737 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shono, T.Fukumura, M.Kawasaki, H.Koinuma, T.Hasegawa, T.Endo, K.Kitazawa, F.Matsukura and H.Ohno: "Magnetic domain structures of (Ga, Mn) As investigated by scaning Hall probe microscopy"Physica B. 284. 1125 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Wang, Y.Ohno, M.Lachab, D.Nakagawa, T.Shirahama, S.Sakai, and H.Ohno: "Electron mobility exceeding 104 cm2/V s in an AlGaN-GaN heterostructure grown on a sapphire substrate"Applied Physics Letters. 74. 3531 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Tsuruoka, Y.Oshizumi, S.Ushioda, Y.Ohno and H.Ohno: "Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope"Applied Physics Letters. 73. 1544 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, S.Katsumoto, Y.Hashimoto, A.Endo, M.Kawamura, M.Zalalutdinov and Y.Iye: "Anisotropy and Barkhausen Jumps in Diluted Magnetic Semiconductor (Ga, Mn) As"Physica B. 284. 1175 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Mayumi Kato, Makoto Sakairi, Akira Endo, Shingo Katsumoto and Yasuhiro Iye: "Electron-electron scattering in two-dimensional electron gas under a controllable spatially modulated magnetic field"Physica E. 6. 735 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Mayumi Kato, Makoto Sakairi, Akira Endo, Shingo Katsumoto and Yasuhiro Iye: "Electron-electron umklapp scattering in two-dimensional electron gas under lateral magnetic periodicity"Physica B. 284. 1902 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] *.Hashimoto, S.Katsumoto, C.Murayama and Y.Iye: "Spin Diffusion Length and Giant Magnetoresistance in Spin-Valve Tri-layers"Physica B. 284. 1247 (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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