1997 Fiscal Year Annual Research Report

半導体超構造の物質設計とスピン制御

Research Project

Project/Area Number	09244105
Research Category	Grant-in-Aid for Scientific Research on Priority Areas
Research Institution	Osaka University
Principal Investigator	吉田博大阪大学, 産業科学研究所, 教授 (30133929)
Co-Investigator(Kenkyū-buntansha)	梅原雅捷無機材質研究所, 未知物質探索センター, 主任研究官小柳剛山口大学, 工学部, 助教授 (90178385) 田中雅明東京大学, 大学院・工学系研究科, 助教授 (30192636)
Keywords	第一原理計算 / 同時ド-ピング / 磁気ポーラロン / 非平衡成長 / 物質設計 / 分子線エピタキシ- / GaMnAs / AlAs / 磁気光学効果
Research Abstract	第一原理計算に基づいて、II-VI族(ZnSe)及びIII-V族化合物半導体(GaN,AlN)の価電子制御法を探索した。アクセプターとドナーを同時にド-ピングすることにより、高濃度までドーパントをドープして低抵抗の半導体を作製するための新しい価電子制御法(同時ド-ピング法)を発見した。さらに、これらの半導体に溶かした磁性イオンのスピン間相互作用を制御する目的でホールをドープしたZnMnSe_2の電子状態を解明し、ホール・ド-ピングにより強磁性相互作用が強くなることを見いだした。これらの結果から、高い強磁性転移温度をもつ磁性半導体の物質創製のための物質設計指針を明らかにした。(吉田)。分子線エピタキシ-を用いた非平衡成長により、III-V族ベースの強磁性半導体GaMnAsとGaMnAs/AlAsから成る超格子を形成し、その構造・磁性・輸送特性、磁気光学効果を明らかにした。また、SiやGaAs半導体基板上に、強磁性金属(MnAs)/III-V半導体(GaAs)から成る異種物質ヘテロ構造のエピタキシャル成長を行い、その構造評価を行い、磁性を調べた(田中)。クラスタイオンビーム法によるPb1-xMnxTeエピタキシャル薄膜の成長とその諸特性、及びスパッタ法によるGe1-xMnxTeアモルファス、結晶性薄膜の作製についての研究を行った。Pb1-xMnxTe薄膜については、スピン交換相互作用に基づくと考えられる、磁界中でのゼ-ベック係数に特異な変化が現れた。また、Ge1-xMnxTe薄膜については、作製条件によってアモルファスと結晶性薄膜とを作り分けることが可能であることがわかった(小柳)。Euカルコゲナイドの発光機構に関する研究:発光スペクトル幅の低温での温度変化とそのカルコゲン依存性を解析し、磁気ポーラロン効果のみならず、発光過程に於ける格子緩和の重要性を再度指摘した。EuSeのキャリアー誘起非金属-金属転移の研究:金属状態では、一様な伝導電子状態の下でキャリアー誘起強磁性状態が実現し、非金属状態に於ては、高密度な自己局在磁気ポーラロンの存在の可能性を指摘した(梅原)。

Research Products

(29 results)

All Other

All Publications (29 results)

[Publications] T.Yamamoto: "Influenceof Intrinsic Defectsans S Substitutionson Electrical Propertiesof Chalcopyrte CuInS_2 Compounds." Preceeding sof the International Conferenceon Shallow-Level Centersin Semiconductors (edited by C.A.J.Ammer Iaanand B.Pajot,World Scientific,. 477-482 (1997)
[Publications] T.Yamamoto: "Materials Design for the Fabrication of Low-resistivity p-type Ga Nusinga Codoping Method" Jpn.J.Appl.Phys.36. L180-L183 (1997)
[Publications] T.Yamamoto: "Controlof Valence States by a Codoping Methodin Wide-Bnad-Gap Semiconductors" 固体物理. 32・375. 409-416 (1997)
[Publications] H.Katayama-Yoshida: "Materials Design of the Codoping for the Fabrication of Low-resistivity p-type ZnSe and GaNbyab-initio Electronic Structure Calculations" Phys.State.Sol.b202. 763-773 (1997)
[Publications] T.Yamamoto: "Controlof Valence Statesof CuInS_2bya Codoping Method" Solar Energy Materials and Solar Cells. 49. 391-397 (1997)
[Publications] T.Yamamoto: "Controlof Valence States by a Codoping Methodinp-type GaN Materials" Mat.Res.Soc.Symp.Proc.468. 105-110 (1997)
[Publications] T.Yamamoto: "A Codoping Method in GaN Proposed by abinitio Electronic Structure Calculations" Materials Science Forum. (1998)
[Publications] S.B.Zhang: "Defect Physics of the CuInSe2 Chalcopyrite Semiconductor" Phys.Rev.B.(1998)
[Publications] K.Ando: "Magnetooptic Effectof Ferromagnetic Diluted Magnetic Semiconductor Ga1-x MnxAs" J.Appl.Phys.(in press). (1998)
[Publications] A.G.Banshcjikov: "MBE Growthand Characterzation of Ferromagnetic MnAs Layers Grown on CaF2:Si(111)"" Int.Symp.on Nanostructures,Physicsand Technology'97,St.Petersburg,Russia,June 1997.(1998)
[Publications] M.Tanaka: "Epitaxial Ferromagnetic Compounds Integrated with III-V Semiconductors" 8th Int.Cong.on Modulated Semiconductor Structures,Santa Barbara,U.S.A.,July 1997.(1998)
[Publications] T.Hayashi: "A New III-V Magnetic Semiconductor (GaMn)A sand (GaMn)As/AlAs Superlattices : Magneticand Magneto-Optic Properties" 8th Int.Conf.on Modulated Semiconductor Structures,Santa Barbara,U.S.A.,July 1997.(1998)
[Publications] M.Tanaka: "“Growthand Manetic Properties of GaMnAs and Related Heterostructures"" Japanese-Polish Symposiumon Diluted Magnetic Semiconductors,Warsaw,Poland,September 1997.(1997)
[Publications] K.Shimada: "Spinand Angle Resolved Photoemission Spectroscopy of Ferromagnetic MnAs" Int.Conf on Electron Spectroscopy (ICES-7),submitted to J.Electron Spectroscopy and Related Phoenomena.(1998)
[Publications] M.Nakamura: "The Evidencefora Preferencial Growth of MnAs Thin Filmon an As-Preadsorbed Si(001) Surface" 4th Int.Symp.on A tomically Controlled Surfacesand Intertaces Tokyo,October 1997.(1998)
[Publications] M.Tanaka: "Propertiesof III-V Based (GaMn)As/AlAs Magnetic Semiconductor Superlattices" 7th Joint MMM-Intermag Conference,San Francisco,January 1998.(1998)
[Publications] T.Hayashi: "Magneticand Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor.GaMnAs" J.Appl.Phys.81. 4865-4867 (1997)
[Publications] T.Hayashi: "GaMnAs:New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy" J.Crystal Growth. 175/176. 1063-1068 (1997)
[Publications] K.Saito: "Epitaxial Growthand Properties of MnAs/GaAs/MnAs Trilayers on GaAs(111) Bandon Si(111) Substrates" Record of the 16th Electronic Materials Symposium. 53-56 (1997)
[Publications] T.Hayashi: "Magnetotransport Properties of New III-V Based Magnetic (GaMnAs)/ Nonmagnetic (AlAs) Semiconductor Superlattices" Record of the 16th Electronic Materials Symposium. 51-52 (1997)
[Publications] 田中雅明: "半導体と磁性体の一体化による新機能ヘテロ構造材料の形成" 機能材料. 17. 5-12 (1997)
[Publications] T.Hayashi: "New III-V Based Magnetic (GaMnAs)/Nonmagnetic (AlAs) Semiconductor Superlattices" Appl.Phys.Lett.71. 1825-1827 (1977)
[Publications] M.Tanaka: "Epitaxial Ferromagnetic Thin Films and Heterostructures of Mn-Based Metallic and Semiconducting Compounds on GaAs" 電気学会マグネティクス研究会資料MAG-97-189. 189. 31-38 (1997)
[Publications] M.Tanaka: "Hall Effectand Transport Properties of III-V Based (GaMn)As/AlAs Magnetic Semiconductor Superlattices" J.Appl.Phys.(in press).
[Publications] K.Ando: "Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga1-xMnxAs" 7th Joint MMM-Intermag Conference,San Francisco,January 1998.(1998)
[Publications] M.Tanaka: "Magneticcompound/Compounnd Semiconductor Heterostructures" 25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25),Salt Lake City,USA,January,1998.(1998)
[Publications] M.Tanaka: "Epitaxial Growthand Properties of MnAs/GaAs/MnAs Ferromagnet-Semiconductor Trilayer Heterostructures" MML-EMRS 1998 Symposium.
[Publications] M.Umehara: "Anomalousdense conduction electronstates and magnetismin Eu-rich EuSe" Journal of Magn.Magn.Mater.印刷中. 177/181. (1998)
[Publications] M.Umehara: "Bound magnetic exciton polaronaccompanied by large latticedisplacementandlumine scence in EuSe" Journal of Magn.Magn.Mater.

1997 Fiscal Year Annual Research Report

半導体超構造の物質設計とスピン制御

Principal Investigator

吉田 博 大阪大学, 産業科学研究所, 教授 (30133929)

Research Products

[Publications] T.Yamamoto: "Influenceof Intrinsic Defectsans S Substitutionson Electrical Propertiesof Chalcopyrte CuInS_2 Compounds." Preceeding sof the International Conferenceon Shallow-Level Centersin Semiconductors (edited by C.A.J.Ammer Iaanand B.Pajot,World Scientific,. 477-482 (1997)

[Publications] T.Yamamoto: "Materials Design for the Fabrication of Low-resistivity p-type Ga Nusinga Codoping Method" Jpn.J.Appl.Phys.36. L180-L183 (1997)

[Publications] T.Yamamoto: "Controlof Valence States by a Codoping Methodin Wide-Bnad-Gap Semiconductors" 固体物理. 32・375. 409-416 (1997)

[Publications] H.Katayama-Yoshida: "Materials Design of the Codoping for the Fabrication of Low-resistivity p-type ZnSe and GaNbyab-initio Electronic Structure Calculations" Phys.State.Sol.b202. 763-773 (1997)

[Publications] T.Yamamoto: "Controlof Valence Statesof CuInS_2bya Codoping Method" Solar Energy Materials and Solar Cells. 49. 391-397 (1997)

[Publications] T.Yamamoto: "Controlof Valence States by a Codoping Methodinp-type GaN Materials" Mat.Res.Soc.Symp.Proc.468. 105-110 (1997)

[Publications] T.Yamamoto: "A Codoping Method in GaN Proposed by abinitio Electronic Structure Calculations" Materials Science Forum. (1998)

[Publications] S.B.Zhang: "Defect Physics of the CuInSe2 Chalcopyrite Semiconductor" Phys.Rev.B.(1998)

[Publications] K.Ando: "Magnetooptic Effectof Ferromagnetic Diluted Magnetic Semiconductor Ga1-x MnxAs" J.Appl.Phys.(in press). (1998)

[Publications] A.G.Banshcjikov: "MBE Growthand Characterzation of Ferromagnetic MnAs Layers Grown on CaF2:Si(111)"" Int.Symp.on Nanostructures,Physicsand Technology'97,St.Petersburg,Russia,June 1997.(1998)

[Publications] M.Tanaka: "Epitaxial Ferromagnetic Compounds Integrated with III-V Semiconductors" 8th Int.Cong.on Modulated Semiconductor Structures,Santa Barbara,U.S.A.,July 1997.(1998)

[Publications] T.Hayashi: "A New III-V Magnetic Semiconductor (GaMn)A sand (GaMn)As/AlAs Superlattices : Magneticand Magneto-Optic Properties" 8th Int.Conf.on Modulated Semiconductor Structures,Santa Barbara,U.S.A.,July 1997.(1998)

[Publications] M.Tanaka: "“Growthand Manetic Properties of GaMnAs and Related Heterostructures"" Japanese-Polish Symposiumon Diluted Magnetic Semiconductors,Warsaw,Poland,September 1997.(1997)

[Publications] K.Shimada: "Spinand Angle Resolved Photoemission Spectroscopy of Ferromagnetic MnAs" Int.Conf on Electron Spectroscopy (ICES-7),submitted to J.Electron Spectroscopy and Related Phoenomena.(1998)

[Publications] M.Nakamura: "The Evidencefora Preferencial Growth of MnAs Thin Filmon an As-Preadsorbed Si(001) Surface" 4th Int.Symp.on A tomically Controlled Surfacesand Intertaces Tokyo,October 1997.(1998)

[Publications] M.Tanaka: "Propertiesof III-V Based (GaMn)As/AlAs Magnetic Semiconductor Superlattices" 7th Joint MMM-Intermag Conference,San Francisco,January 1998.(1998)

[Publications] T.Hayashi: "Magneticand Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor.GaMnAs" J.Appl.Phys.81. 4865-4867 (1997)

[Publications] T.Hayashi: "GaMnAs:New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy" J.Crystal Growth. 175/176. 1063-1068 (1997)

[Publications] K.Saito: "Epitaxial Growthand Properties of MnAs/GaAs/MnAs Trilayers on GaAs(111) Bandon Si(111) Substrates" Record of the 16th Electronic Materials Symposium. 53-56 (1997)

[Publications] T.Hayashi: "Magnetotransport Properties of New III-V Based Magnetic (GaMnAs)/ Nonmagnetic (AlAs) Semiconductor Superlattices" Record of the 16th Electronic Materials Symposium. 51-52 (1997)

[Publications] 田中雅明: "半導体と磁性体の一体化による新機能ヘテロ構造材料の形成" 機能材料. 17. 5-12 (1997)

[Publications] T.Hayashi: "New III-V Based Magnetic (GaMnAs)/Nonmagnetic (AlAs) Semiconductor Superlattices" Appl.Phys.Lett.71. 1825-1827 (1977)

[Publications] M.Tanaka: "Epitaxial Ferromagnetic Thin Films and Heterostructures of Mn-Based Metallic and Semiconducting Compounds on GaAs" 電気学会マグネティクス研究会資料MAG-97-189. 189. 31-38 (1997)

[Publications] M.Tanaka: "Hall Effectand Transport Properties of III-V Based (GaMn)As/AlAs Magnetic Semiconductor Superlattices" J.Appl.Phys.(in press).

[Publications] K.Ando: "Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Ga1-xMnxAs" 7th Joint MMM-Intermag Conference,San Francisco,January 1998.(1998)

[Publications] M.Tanaka: "Magneticcompound/Compounnd Semiconductor Heterostructures" 25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25),Salt Lake City,USA,January,1998.(1998)

[Publications] M.Tanaka: "Epitaxial Growthand Properties of MnAs/GaAs/MnAs Ferromagnet-Semiconductor Trilayer Heterostructures" MML-EMRS 1998 Symposium.

[Publications] M.Umehara: "Anomalousdense conduction electronstates and magnetismin Eu-rich EuSe" Journal of Magn.Magn.Mater.印刷中. 177/181. (1998)

[Publications] M.Umehara: "Bound magnetic exciton polaronaccompanied by large latticedisplacementandlumine scence in EuSe" Journal of Magn.Magn.Mater.

吉田博大阪大学, 産業科学研究所, 教授 (30133929)