1999 Fiscal Year Final Research Report Summary
CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH
| Project/Area Number |
09305003
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | NAGOYA UNIVERSITY |
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Principal Investigator |
TAKEDA Yoshikazu NAGOYA UNIVERSITY, DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, PROFESSOR, 工学研究科, 教授 (20111932)
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| Co-Investigator(Kenkyū-buntansha) |
NONOGAKI Youichiro NAGOYA UNIVERSITY, DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, RESEARCH ASSOCIATE, 工学研究科, 助手 (40300719)
TABUCHI Masao NAGOYA UNIVERSITY, DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, ASSISTANT PROFESSOR, 工学部, 講師 (90222124)
FUJIWARA Yasufumi NAGOYA UNIVERSITY, DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, ASSOCIATE PROFESSOR, 工学研究科, 助教授 (10181421)
HARADA Jimpei RIGAKU ELECTRIC, X-RAY LABORATORY, RESEARCHER, X線研究所, 研究員
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| Project Period (FY) |
1997 – 1999
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| Keywords | SURFACE / INTERFACE / ATOMIC LAYER / CRYSTAL STRUCTURES / HETEROSTRUCTURE GROWTH / GROWTH CONTROL |
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| Research Abstract |
The targets of this research are to establish a technique to measure and analyze the crystal structures of surface and interface monolayer in semiconductor in situ, and to control the heterostructure growth, not only semiconductor/semiconductor heterostructures but also other combinations such as semiconductor/insulator and semiconductor/semimetal heterostructures.
InP/ErP/InP heterostructures were successfully fabricated and the crystal structure of ErP was proved to be the rocksalt structure by CTR scattering measurement. It was also found the semimetal changes to semiconductor due to the quantum size effects.
By the X-ray CTR scattering measurements, the compositions, the layer thicknesses and the interface structures of InP/InGaAs (2-3 monolayer) /InP heterostructures were measured and revealed to the one atomic layer level.
The observation of one atomic layer of AlAs (1 monolayer) on GaAs was successfully made by X-ray CTR scattering. Together with the interface structure analysis in
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InP/InGaAs/InP and the observation of surface 1 monolayer of AlAs, the original targets were achieved in this research.
The X-ray CTR scattering measurement technique that has demonstrated its very powerful capability to reveal the crystal structures of 1 atomic layer in heterostructures was applied to the low-temperature buffer layers for growth of GaN on sapphire substrates. The growth process and growth timing dependences of the crystalline structures of the low-temperature AlN and GaN buffer layers were revealed by the X-ray CTR scattering measurements, X-ray reflectivity measurements and AFM surface observations. The role of the low-temperature buffer layers and the best crystallinity as the buffer layers were clarified in the atomic scale.
Through the establishments of the characterization techniques and the analysis of these heterostructures, a completely new heterostructure, i.e., CaFィイD22ィエD2/InAs/CaFィイD22ィエD2, were proposed and started to fabricate by a newly designed molecular beam epitaxy. Less
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