1999 Fiscal Year Annual Research Report

半導体自然超格子超簿膜を利用した新量子構造材料創製

Research Project

Project/Area Number	09305020
Research Institution	Kobe University
Principal Investigator	西野種夫神戸大学, 工学部, 教授 (60029452)
Co-Investigator(Kenkyū-buntansha)	喜多隆神戸大学, 工学部, 助手 (10221186) 中山弘神戸大学, 工学部, 助教授 (30164370)
Keywords	オーダリング / 量子構造 / 分線エピタキシー / 超高速分光 / 反射率差分光
Research Abstract	本年度は自然超格子薄膜中での原子の規則的な配列の揺らぎによる量子構造の作製を行い、その量子構造に関して磁気光学効果の観測結果に基づき光励起による分光学的な側面からの量子物性を明らかにした。超高速時間分解分光を駆使した電子・正孔の励起緩和課程のダイナミックスについて実験的検討行うとともに局所電子状態を考慮した理論計算との比較検討により、新しい物性・機能を有する量子構造の創製を探索した。具体的な内容は以下のとおりである。 (1)ナノスケールの微少ポテンシャル揺らぎを有する半導体超薄膜の成長を行い結晶成長中のRDSのリアルタイム分光で精密に成長表面の電子状態をモニターしながら原子オーダリングを局所的に制御して新しい量子構造を作製した。 (2)光励起キャリアや励起子の緩和過程の時間分解測光による量子構造材料の評価によって極低温から室温までの広い温度領域で自然超格子薄膜中の電子・正孔の超高速励起緩和過程を時間分解測光によって明らかにし、微少なポテンシャル揺らぎに関係した新しい物性を見いだすとともにバンド構造の揺らぎの影響を明確に出来た。 (3)これまでの研究成果を基に新しい機能を持った量子構造の検討を行い新しい物性・機能を有する量子構造の創製を探索した。

Research Products
(12 results)

All Other

All Publications (12 results)

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)
[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga_<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)
[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflactance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter 9. 457-462 (1999)
[Publications] K.Yamashita: "Linear Electroptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)
[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Relted Materials,Davos. 159-162 (1999)
[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)
[Publications] T.Kita: "Reflactance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)
[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (1999)
[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (1999)
[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (1999)
[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (1999)
[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (1999)

1999 Fiscal Year Annual Research Report

半導体自然超格子超簿膜を利用した新量子構造材料創製

Principal Investigator

西野 種夫 神戸大学, 工学部, 教授 (60029452)

Research Products

[Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)

[Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga_<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)

[Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflactance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter 9. 457-462 (1999)

[Publications] K.Yamashita: "Linear Electroptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)

[Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Relted Materials,Davos. 159-162 (1999)

[Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)

[Publications] T.Kita: "Reflactance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)

[Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (1999)

[Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (1999)

[Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (1999)

[Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (1999)

[Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (1999)

西野種夫神戸大学, 工学部, 教授 (60029452)