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1999 Fiscal Year Final Research Report Summary

Development of New Quantum Structure by Long-Range Ordered Semiconductor Superlattice Thin Films

Research Project

Project/Area Number 09305020
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKobe University

Principal Investigator

NISHINO Taneo  Kobe University, Faculty of Engineering, Professor, 工学部, 教授 (60029452)

Co-Investigator(Kenkyū-buntansha) KITA Takeshi  Kobe University, Faculty of Engineering, Research Associate, 工学部, 助手 (10221186)
NAKAYAMA Hiroshi  Kobe University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30164370)
Project Period (FY) 1997 – 1999
KeywordsAtomic Ordering / Quantum Structure / Molecular Beam Epitaxy / Ultra Fase Spectroscopy / Reflectance difference
Research Abstract

We have performed the material research of the natural superlattice super-thin film from two view points ; (1)physics and (2)preparation of the new semiconductor quantum structure material, in order to create new quantum structure materials which semiconductor natural superlattice super-thin film was used for. Relations between order parameter and the band-gap fluctuation of the natural superlattice thin film were cleared, and it succeeded in the control of the fluctuations that result. It became clear that injected or excited carriers in the natural superlattice thin film have quantum behavior from the ultra-fast spectroscopy and the electronic transport ptoperty by Time-of Flight measurements. On the other hand, development of the crystal growth technology controlled in atom scale was indispensable, and we built the system which therefore measured a RDS(reflectance-difference spectroscopy)signal with RHEED during the crystal growth in real time to grow new natural superlattice quantum structure materials. It succeeded in observing atomic behavior in the crystal growth front during the atomic layer growth by using this technology with molecular beam epitaxy.

  • Research Products

    (79 results)

All Other

All Publications (79 results)

  • [Publications] S. Abe: "Valence-Electron Spectral Change in Electrochemical Reaction Process in CaSi_2"Appl. Surface Sci.. Vol. 114. 562-566 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Marinelli: "Cathodoluminescence Spectroscopy of Synthetic Diamond Films"Diamond & Related Materials. Vol. 6. 717-720 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Tsukada: "Electron Localization due to Symmetry Breaking in Nonlinear Coupled Quantum Systems"Jpn. J. Appl. Phys.. Vo. 36, No. 6B. L834-837 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Tsukada: "Dynamical Control of Quantum Tunneling due to ac Stark Shift in an Asymmetric Coupled-Quantum-Dot"Phys. Rev. B. Vol. 56, No.15. 9231-9234 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Nakayama: "Stochastic Growth theory of Molecular Beam Epitaxy wit Atom Correlation Effects : A Monte-Carlo Master Equation Method"Applied Surface Science. Vol. 113/114. 631-637 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Abe: "Auger valence electron spectra in Ca-silicides"J. Mat. Res.. Vol. 12, No. 2. 407-411 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Photoluminescence from Metastable States in Long-Range Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Phys. Rev. B. Vol. 55, No. 7. 4411-4416 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "High Efficiency Energy Up-Conversion Induced by Carrier Localization in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Abstr. 39th Electronic Materials Conference, Colorado. 35 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Tsukada: "Rotational Transfer and Dynamical Bunching of an Electron in Coupled Three Quantum Dots under the Influence of a Circularly Polarized Electric Field"Proc. Int. Workshop on nano-Physics and Electronics. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Role of Carrier Localization in Energy Up-Conversion at (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Proc. 16th Electronic Materials Symposium. 169-170 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Abe: "Valence State Analysis of CaSi_2 with two-dimensional-like Si Layer"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Fujii: "Re-investigation of Foxon Model of GaAs Molecular Beam Epitaxy"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Furuich: "Growth Shape Simulation by Monte-Carlo Master-Equation Method"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Nishida: "Molecular Beam Scattering-Desorption Study of Surface-Reaction Kinetics of MBE Growth of GaAs (001)"Proc. 2nd Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach. 61-64 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Spin-Polarized Excitons in Long-Range Ordered Ga_<0.5>In_<0.5>P"Phys. Rev. B. Vol. 57, No. 24. R15044-R15047 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Abe: "Valence States Analysis of Ca and Si in CaSi_2 during CaSi_2-H_2O Reaction"J. Mater. Res.. Vo. 13, No. 5. 1401-1404 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Tsukada: "Laser-Induced Enhancement of Electron Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well"Jpn. J. Appl. Phys.. Vol. 37, No. 5A. 2476-2377 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N. Tsukada: "Rotational Transfer and Dynamical Bunching of an Electron in Three Coupled Quantum Dots Induced by a Circularly Polarized Electric field"Solid State Electron. Vol. 42, No.7-8. 1273-1280 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Carrier Localization Effects in Energy Up Conversion at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"J. Appl. Phys.. Vol. 84, No. 1. 359-363 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Band-Edge Structure of Diamond Films Grown on Silicon"Diamond Film and Technology. Col. 8, No. 5. 355-360 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Nakayama: "Monte-Carlo Master Equation Method for a Simulation of an Epitaxial Growth Dynamics of Compound and Alloy Semiconductors"Proc. 17th Electronic Materials Symposium, Izunagaoka. 169 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Time-Resolved Up-Converted Photoluminescence at Semiconductor Heterointerface"Proc. 17th Electronic Materials Symposium, Izunagaoka. 129 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Abe: "Synthesis of Quasi Two-Dimensional Photoluminescence CaSi_2 and FeSi_2 by Solid Reaction on Si (111) Substrate"Proc. Int. Conf. Solid Films & Surfaces. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Spin-Polarized Excitons in Long Range Ordered Ga_<0.5>In_<0.5>P"Proc. 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 525-528 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Efficiency of Photoluminescence Up-Conversion at (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P and GaAs Heterointerface"Proc. 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 521-524 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Abe: "Auger Electron Spectroscopy of Super-Doped Si : Mn Thin Films"Proc. 9th International Conference on Solid Films and Surfaces, Denmark. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Observations of Ordering-Induced Indirect to Direct Transition in AlGaInP (Invited Paper)"Abstr. 40th Electronic Materials Conference. 27 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn. J. Appl. Phys.. Vol. 38, No. 2B. 1001-1003 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga_<0.5>In_<0.5>P/GaAs Heterointerface"Phys. Rev. B. Vol. 59, No. 23. 15358-15362 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst. Phys. Conf. Ser., No. 162. Chapter 9. 457-462 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J. Appl. Phys.. Vol. 86, No. 6. 3140-3143 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc. 11th International Conference on Indium Phosphide and Related Materials, Davos. 159-162 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 39-40 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs during Stransk-Krastanov Formation of Quantum Dots"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 141-142 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Dynamics Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Time-Resolved Observation on Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P"Journal of Luminescence. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference spectroscopy and Photoluminescence"Inst. Phys. Conf. Ser.. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Shimizu: "Structural Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Nakayama: "Atomic Ordering in Epitaxial Alloy Semiconductors : from the Discoveries to the Physical Understanding in Advances in the Understanding of Crystal Growth Mechanism, Edited by T. Nishinaga"Elsevier, Amsterdam.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Abe, H.Nakayama, T.Nishino and S.Iida: "Valence-Electron Spectral Change in Electrochemical Reaction Process in CaSiィイD22ィエD2"Appl. Surface Sci.. 114. 562-566 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Marinelli, A.Paoletti, A.Tucciarone, A.Hatta, T.Ito, A.Hiraki and Taneo Nishino: "Cathodoluminescence Spectroscopy of Synthetic Diamond Films"Diamond & Related Materials. 6. 717-720 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita and T.Nishino: "Electron Localization due to Symmetery Breaking in Nonlinear Coupled Quantum Systems"Phys. Rev. B. Vol.56, No.15. 9231-9234 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita and T.Nishino: "Dynamical Control of Quantum Tunneling due to ac Stark Shift in an Asymmetric Coupled-Quantum-Dot"Applied Surface Science. 113/114. 631-637 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nakayama, A.Furuichi, T.Kita and T.Nishino: "Stochastic Growth theory of Molecular Beam Epitaxy wit Atom Correlation Effects : A Monte-Carlo Master Equation Method"J. Mat. Res.. Vol.12, No.2. 407-411 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Abe, H.Nakayama, T.Nishino and S.Iida: "Auger valence electron sp ectra in Ca-silicides"Phys. Rev. B. Vol.55, No.7. 4411-4416 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Photoluminescence from Metastable States in Long-Range Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P"Abstr. 39th Electronic Materials Conference, Colorado. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "High Efficiency Energy Up-Conversion Inducted by Carrier Localization in Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterointerface"Proc. Int. Workshop on Nano-Physics and Electronics. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita and T.Nishino: "Rotational Transfer and Dynamical Bunching of an Electron in Coupled Three Quantum Dots under the Influence of a Circularly Polarized Electric Field"Proc. 16th Electronic Materials Symposium. 169-170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama and T.Nishino: "Role of Carrier Localization in Energy Up-Conversion at (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.51ィエD2InィイD20.49ィエD2P/GaAs Heterointerface"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Abe, H.Nakayama, T.Nishino, S.Iida and E.Kulatov: "Valence States Analysis of CaSiィイD22ィエD2 with two-dimensional-like Si Layer"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Fujii, H.Nishida, H.Nakayama and T.Nishino: "Re-investigation of Foxon Model of GaAs Molecular Beam Epitaxy"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Furuichi, H.Nakayama and T.Nishino: "Growth Shape Simulation by Monte-Carlo Master-Equation Method"Proc. 16th Electronic Materials Symposium. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nishida, S.Fujii, H.Nakayama and T.Nishino: "Molecular Beam Scattering-Desorption Study of Surface-Reaction Kinetics of MBE Growth of GaAs(001)"Proc. 2nd Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach. 61-64 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, M.Sakurai, K.Bhattacharya, K.Yamashita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Spin-Polarized Excitons in Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P"Phys. Rev. B. Vol.57, No.24. R15044-R15047 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Abe, H.Nakayama, T.Nishino and S.Iida: "Valence States Analysis of Ca and Si in CaSiィイD22ィエD2 during CaSiィイD22ィエD2-HィイD22ィエD2O Reaction"J. Master. Res.. Vol.13, No.5. 1401-1404 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita and T.Nishino: "Laser-Induced Enhancement of Electron Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well"Jpn. J. Appl. Phys.. Vol.37, No.5A. 2476-2377 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, M.Gotoda, M.Nunoshita and T.Nishino: "Rotational Transfer and Dynamical Bunching of an Electron in Three Coupled Quantum Dots Induced by a Circularly Polarized Electric field"Solid State Electron. Vol.42, No.7-8. 1273-1280 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Carrier Localization Effects in Energy Up Conversion at Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterointerface"J. Appl. Phys.. Vol.84, No.1. 359-363 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, A.Mochida, T.Nishino, A.Hatta, T.Ito, and A.Hiraki: "Band-Edge Structure of Diamond Films Grown on Silicon"Diamond Film and Technology. Vol.8, No.5. 355-360 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nakayama, T.Morikawa, T.Ekaitsu and T.Nishino: "Monte-Carlo Master Equation Method for a Simulation of an Epitaxial Growth Dynamics of Compound and Alloy Semiconductors"Proc. 17th Electronic Materials Symposium, Izunagaoka. 169 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Yamashita, T. Kita, H. Nakayama, and T. Nishino: "Time-Resolved Up-Converted Photoluminescence at Semiconductor Heterointerface"Proc. 17th Electronic Materials Symposium, Izunagaoka. 129 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Abe, K.Aoyagi, H.Nakayama, T.Nishino, H.Ohta and E.Kulatov: "Synthesis of Quasi Two-Dimensional CaSiィイD22ィエD2 and FeSiィイD22ィエD2 by Solid Phase Reaction on Si(111) Substrate"Proc. Int. Conf. Solid Films & Surfaces. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Bhattacharya, K.Yamashita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Spin-Polarized Excitons in Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P"Proc. 10th International Conference on indium Phosphide and Related Materials, Tsukuba. 525-528 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, T.Nishino, and M.Oestreich: "Efficiency of Photoluminescence Up-Conversion at (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P and GaAs Heterointerface"Proc. 10th International Conference on indium Phosphide and Related Materials, Tsukuba. 521-524 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Abe, K.Yamashita, Y.Nakasima, S.Okubo, T.Kita, H.Nakayama, T.Nishino, H.Yanagi, H.Ohta: "Auger Electron Spectroscopy of Super-Doped Si : Mn Thin Films"Proc. 9th International Conference on Solid Films and Surfaces, Denmark. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Yamashita, and T.Nishino: ""Observations of Ordering-Induced Indirect to Direct Transition in AlGaInP"AiInvitedAj"Abstr,40th Electronic Materials Conference, Charlottesville. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, T.Nishino, and M.Oestreich: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterointerface"Jpn. J. Appl. Phys.. Vol.38, No.2B. 1001-1003 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterostructure"Phys. Rev. B. Vol.59, No.23. 15358-15362 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, T.Hagihara, K.Yamashita, and T.Nishino: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst. Phys. Conf. Ser.. No.162, Chapter9. 457-462 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Linear Electrooptic Effect in Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P"J. Appl. Phys.. Vol.86, No.6. 3140-3143 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, M.Sakurai, K.Yamashita, and T.Nishino: "Energy Relaxation by Multiphonon processes in Partially Ordered(AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P"Proc. 11th International Conference on indium Phosphide and Related Materials, Davos. 159-162 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 39-40 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Yamashita, H.Tango, and T.Nishino: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs during Stranski-Krastanov Formation of Quantm Dots"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 141-142 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Yamashita, H.Tango, and T.Nishino: "Dynamic Process of Tow-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Time-Resolved Observations of Anti-Stokes Photoluminescence at Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst. Phys. Conf. Ser.. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Tachikawa, H.Tango, K.Yamashita, and T.Nishino: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Shimizu, M.Ofuji, S.Abe, H.Nakayama, and T.Nishino: "Structural Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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