2001 Fiscal Year Final Research Report Summary
ナノクリスタルドープ光導波路及び次世代フォトニックデバイスへの適用
| Project/Area Number |
09305021
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Waseda University |
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Principal Investigator |
KATO Isamu Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (80063775)
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| Co-Investigator(Kenkyū-buntansha) |
UTAKA Katsuyuki Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (20277817)
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| Project Period (FY) |
1997 – 2000
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| Keywords | Microwave Plasma CVD / Silicon Nano Crystal / Multilayer Films / Luminescent Material / Optical Waveguides Type Filter / MBE / semiconductor nanocrystal / wavelength converter |
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| Research Abstract |
We fabricate silicon nano crystal (nc-Si) using Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition (MPCVD) and evaluate its photo luminescence characteristics varying fabrication conditions. Furthermore, although it was thought that the ion bombard energy was related to creation of Si nano crystal, this was clarified by analyzing creation process. And we clarify the validity of analysis by calculating the number of Si nano crystals.
On the other hand, a new silicons photonic materials is aimed at, we fabricate a-Si : H/Si3N4 multilayer films which consists of a-Si : H and Si_3N_4 and evaluate its film quality. A theoretical curve and an experiment value of optical band gap of multilayer films were agreeing well, and we can fabricate the multilayer films of good quality. And this is processed into slab waveguides. As a result, this waveguides have polarization properties, TE-mode-cut and TM-mode-pass. And when intensity of pumping lights increase, the extinction ratio rises.
Fundamental studies for realizing high quality compound semiconductor nanocrystals with which are in high-density and precisely position-controlled have been carried out. Nano-oder dips with 300nm diameter and 2-nm depth were formed on GaAs substrates by using electron beam exposure (EBX) method, and InAs was grown on them by molecular beam epitaxy (MBE) method. As a result, position-controlled nanocrystals of 25nm height with ring shapes associated with those dips were successfully fabricated, and room-temperature PL was measured. Also possibility for stacked structure was clarified. In parallel, photonic functional devices which the nanocrysrtals will be utilized for higher device performances were investigated to have realized foperations of multimode interference wavelength converters and photonic switches, and fundamental issues for the device application were solved.
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