1998 Fiscal Year Final Research Report Summary
Research on epitaxial growth of functional group-IV semiconductor superstructures and application to VLSI
| Project/Area Number |
09355001
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 展開研究 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
SHIRAKI Yasuhiro RCAST,The University of Tokyo, Professor, 先端科学技術研究センター, 教授 (00206286)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAKAGAWA Kiyokazu Hitachi Central Research Laboratory, 中央研究所, 主任研究員
USAMI Noritaka RCAST,The University of Tokyo, Research Associate, 先端科学技術研究センター, 助手 (20262107)
OSADA Toshihito ISSP,The University of Tokyo, Associate Professor, 物性研究所, 助教授 (00192526)
|
|---|
| Project Period (FY) |
1997 – 1998
|
| Keywords | SiGe / neighboring confinement structure / quantum dots / selective epitaxy / イオン注入 / 変調ドープ構造 / 界面ラフネス散乱 / 不純物散乱 |
|---|
| Research Abstract |
Various semiconductor superstructures based on group-IV semiconductors have been investigated. Neighboring Confinement Structures, which consist of adjacent quantum wet Is that separately confine electrons and holes, were grown on strain-relaxed SiGe, and great enhancement of no-phonon transitions was observed. We also grew Ge quantum dots on Si by utilizing the Stranski-Krastanow growth mode, and intense photoluminescence was observed due to the efficient carrier confinement. Precise control of the size and the position of Ge dots was achieved by combining gas-source selective epitaxy and electron beam lithography. Very high mobilities were realized both in electrons and holes by using strained-Si channel on relaxed-SiGe and pure-Gechannel, respectively.
|
