1999 Fiscal Year Final Research Report Summary
Study of temperature induced transition in small samples and small region in surface by using photoelectron spectromicroscopy and laser annealing systems
| Project/Area Number |
09440125
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
固体物性Ⅰ(光物性・半導体・誘電体)
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| Research Institution | Institute for Solid State Physics, University of Tokyo Grant-in-Acd for Scientific Research (B) (1998-1999)
Okazaki National Research Institutes (1997) |
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Principal Investigator |
KINOSHITA Toyohiko Institute for Solid State Physics, Univ. Tokyo, Associate Prof., 物性研究所, 助教授 (60202040)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Shin-ichi Div. Mathematical & Material Sci. Kobe Univ., Associate Prof., 大学院・自然科学研究科, 助教授 (10252800)
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| Project Period (FY) |
1997 – 1999
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| Keywords | photoelectron microscopy / laser / phase transition / electronic structure / photoemission / synchrotron Radiation |
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| Research Abstract |
By combining the photoelectron spectromicroscopy equipment and Nd YAG laser system, we have studied mainly the temperature dependent photoelectron spectra for a variety of materials. Because the leader of this project (Kinoshita) has moved from the institute for molecular science (IMS) to the Tsukuba branch of institute for solid state physics, Univ. Tokyo (ISSP) on November 1998, the study has been undergoing at both places. At IMS, we have also constructed the manipulator system for low temperature measurements. By using this combining system, we have been able to measure photoelectron spectra between 33K〜1500K The cleaning procedure of the sample surface has become easier very much. At IMS, the spatial resolution of 20μm for spectroscopic mode can be achieved. The photoelectron spectroscopy measurements for temperature induced mixed valence material EuNiィイD22ィエD2(SiィイD21-XィエD2GeィイD2XィエD2)ィイD22ィエD2 both at Eu 4d-4f and 3d-4f resonant conditions, very small organic materials such, as DCNQI or DSTSA samples and so on have been performed. The Si 2p photoelectron spectra for high-temperature phase Si(111)1xl were also measured. We are also studying surface photo-voltage effect induced by laser irradiation onto semiconductor surface. At ISSP, we are constructing higher performance photoelectron spectromicroscopy equipment by which the lateral resolution of 60nm for imaging mode can be expected. Although data have not. been obtained yet, we started to construct the combining system with laser annealing system and microscopy system.
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