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2000 Fiscal Year Final Research Report Summary

A RESEARCH ON QUANTUM DOT BASED MATERIAL FOR WAVELENGTH-DIVISION-MULTIPLICATION MEMORY APPLICATIONS

Research Project

Project/Area Number 09450001
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

MUTO Shunichi  Hokkaido Univ., Grad.School of Eng., Prof., 大学院・工学研究科, 教授 (00114900)

Co-Investigator(Kenkyū-buntansha) YOKOYAMA Naoki  Fujitsu Laboratories LTD., フェロー
SHIRAMINE Ken-ichi  Hokkaido Univ., Grad.School of Eng., Inst., 大学院・工学研究科, 助手 (10241358)
HAGA Tetsuya  Hokkaido Univ., Grad.School of Eng., Asso.Prof., 大学院・工学研究科, 助教授 (00113605)
SUGIYAMA Yoshihiro  Fujitsu Laboratories LTD., 基盤技術研究所, 主任研究員
Project Period (FY) 1997 – 2000
Keywordsquantum dots / wave-division-multiplication / optical memory / scaling / tunneling / lattice deformation / atomic diffusion / stacking
Research Abstract

Now it is possible to form quantum dots in which electrons show its wavenature as their discrete energy levels. So far, however, the size of the dots is not uniform. This study aim at using those inhomogeneous quantum dots for wave-division-multiplication optical memory based on the fact that quantum dots respond to light with a specific wavelength corresponding to its size.
We discovered scaling functions of the size distribution and the position distribution of the InAs/GaAs self-assembled quantum dots(SAQDs)grown by molecular beam epitaxy(MBE). This indicates that the mechanism governing the formation of the dots is described by a rather simple picture.
We studied a possibility to enhance the memory duration using tunneling effect, and confirmed the tunneling of the electrons from InAlAs SAQDs through an AlGaAs tunneling barrier to the AlAs layer. Also, we showed possibilities to increase the effective density of dots using a stacking technique.
The lattice deformation and atomic diffusion of the InAs/GaAs SAQD were studied by ion channeling method. It was shown that the Ga diffusion depended strongly on the InAs coverage and that there were two regions of growth modes identified : one with larger dots with little Ga diffusion and the other with smaller dots with evident Ga diffusion.

  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Y.Sugiyama: "Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode"Electron.Lett.. 33・19. 1655-1666 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Haga: "Interdiffusion between InAs quantum dots and GaAs matrices"Jpn.J.Appl.Phys.. 36・8B. L1113-L1115 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Sugiyama: "Characteristics of Spectral Hole Burning of InAs Self-Assembled Quantum Dots"IEEE.J.Sel.Top.Quantum.Electron.. 4・5. 880-885 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Muto: "Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski-Krastanow mode of Molecular Beam Epitaxy"Material Science in Semiconductor Processing. 1・2. 131-140 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiramine: "Threading dislocations in multilayer structure of InAs self-assembled quantum dots"Jpn.J.Appl.Phys.. 37・10. 5493-5496 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ebiko: "Island size scaling in InAs/GaAs self-assembled quantum dots"Phys.Rev.Lett.. 80・12. 2650-2653 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiramine: "TEM observation of threading dislocations in InAs self-assembled quantum dot structure"J.Cryst.Growth. 205. 461-466 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ebiko: "Scaling properties of InAs/GaAs self-assembled quantum dots"Phys.Rev.B. 60・11. 8234-8237 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ishigure: "Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling"Jpn.J.Appl.Phys.. 38・1B. 504-506 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ebiko: "Volume Distributions of InAs/GaAs Self-Assembled Quantum Dots by Stranski-Krastanow Mode"J.Cryst.Growth. 201/202. 1150-1153 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Matsumura: "Lattice deformation and interdiffusion of InAs quantum dots on GaAs (100)"J.Appl.Phys.. 89・1. 160-164 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Sugiyama et.al.: "Observation of spectral hole buming in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode"Electron.Lett.. Vol.33, No.19. 1655-1656 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Haga et.al.: "Interdiffusion between InAs quantum dots and GaAs matrices"Jpn.J.Appl.Phys.. Vol.36, No.8B. L1113-L1115 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Sugiyama et.al.: "Characteristics of Spectral Hole Buming of InAs Self-Assembled Quantum Dots"IEEE J.Sel.Top.Quantum Electron.. Vol.4, No.5. 880-885 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Muto: "Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski-Krastanow mode of Molecular Beam Epitaxy"Material Science in Semiconductor Processing. Vol.1, No.2. 131-140 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shiramine et.al.: "Threading dislocations in multilayer structure of InAs self-assembled quantum dots"Jpn.J.Appl.Phys.. Vol37, No.10. 5493-5496 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ebiko et.al.: "Island size scaling in InAs/GaAs self-assembled quantum dots"Phys.Rev.Lett.. Vol.80, No.12. 2650-2653 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shiramine et.al.: "TEM observation of threading dislocations in InAs self-assembled quantum dot structure"J.Cryst.Growth. 205. 461-466 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ebiko et.al.: "Scaling properties of InAs/GaAs self-assembled quantum dots"Phys.Rev.B. 60, No.11. 8234-8237 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ishigure et.al.: "Crystallographic properties of Closely Stacked InAs Quantum Dots Investigated by lon Channeling"Jpn.J.Appl.Phys.. 38(1B). 504-506 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ebiko et.al.: "Volume Distributions of InAs/GaAs Self-Assembled Quantum Dots by Stranski-Krastanow Mode"J.Cryst.Growth. 201/202. 1150-1153 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Matsumra et.al.: "Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)"J.Appl.Phys.. 89(1). 160-164 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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