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1999 Fiscal Year Final Research Report Summary

STUDIES ON INTERSURFACE DIFFUSION IN NANO-STRUCTURE EPITAXY

Research Project

Project/Area Number 09450008
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

NISHINAGA Tatau  GRADUATE SCHOOL OF ENGINEERING, UNIVERSITY OF TOKYO, PROFESSOR, 大学院・工学系研究科, 教授 (10023128)

Co-Investigator(Kenkyū-buntansha) NARITSUKA Shigeya  GRADUATE SCHOOL OF ENGINEERING, UNIVERSITY OF TOKYO, LECTURER, 大学院・工学系研究科, 講師 (80282680)
TANAKA Masaaki  GRADUATE SCHOOL OF ENGINEERING, UNIVERSITY OF TOKYO, ASSOCIATED PROFESSOR, 大学院・工学系研究科, 助教授 (30192636)
Project Period (FY) 1997 – 1999
KeywordsGaAs / molecular beam epitaxy / intersurface diffusion / μ-RHEED / MBE / surface diffusion / pyramid structure / macro-step / AィイD2s2ィエD2 molecules
Research Abstract

In the present study, the surface diffusion of Ga between two growing surfaces in molecular beam epitaxy (MBE) of GaAs was studied first. We call such diffusion as an inter-surface diffusion. The intersurface diffusion governs the growth of micro/nano structures and one of the key elementary growth processes which determine the appearing and disappearing of a certain facet. It turned out that the amount and the direction of the intersurface diffusion depends strongly on As pressure. It was found that the top size of a truncated pyramid or ridge can be controlled by changing arsenic pressure. For instance, the top of truncated pyramid is decreased during the growth at lower As pressure while it is increased under higher As pressure. By rotating the substrate, it was possible to get uniform truncated pyramids with controlled top size so that one can grow dot structures on the tops.
In the next step, the order of reaction of AィイD2s2ィエD2 and AィイD2s4ィエD2 with Ga in MBE growth was studied. It was found that under a low As pressure the order was the first while under high As pressure it was the second for both As species. As for As4 the result shows good agreement with well known results reported by Foxon and Joyce while the presence of the second order reaction regime for AィイD2s2ィエD2 has not been reported.

  • Research Products

    (60 results)

All Other

All Publications (60 results)

  • [Publications] H. W. Ren, T. Nishinaga,: "Scanning Electron Microscopy of InAs Aggregation on GaAs Vicinal Surfaces in Molecular Beam Epitaxy"J. Crystal Growth.. 179. 32-36 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] X. Q. Shen, H. W. Ren, T. Nishinaga,: "Initial Growth Behavior of Disk-Shaped Mesas in GaAs Molecular Beam Epitaxy on GaAs (111) B Substrates"J. Crystal Growth.. 177. 175-180 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, X. Q. Shen, T. Nishinaga,: "Arsenic Pressure Dependence of Pure Two-Face Inter-Surface Diffusion between (001) and (111) B in Molecular Bean Epitaxy of GaAs"J. Crystal Growth.. 174. 539-543 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, T. Nishinaga,: "Inter-surface Diffusion of Ga on GaAs Non-planar Substrate and its Real Time Control by Microprobe-RHEED/SEM MBE"Cryst, Res. Technol.,. 32. 1049-1055 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga, A. Yamashiki, X. Q. Shen,: "Arsenic Pressure Dependence of Inter-Surface Diffusion in MBE of GaAs studied by the Microprobe-RHEED/SEM MBE System"Thin Solid Films,. 306. 187-191 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga, A. Yamashiki, X. Q. Shen,: "Inter-surface Diffusion of Ga on GaAs Non-planar Studied by Microprobe-RHEED/SEM MBE"AIC-DGKK Joint Annual Meeting. 15 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, T. Nishinaga,: "Arsenic Pressure Dependence of Inter-surface diffusion between (001) and (111) B in MBE of GaAs"Proc. 2nd. Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach. 65-70 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, T. Nishinaga,: "Inter-surface Diffusion in MBE of GaAs on non-panar substrate studied by microprobe-RHEED/SEM MBE system"Proc. 1nd. Symp. On Atomic-scale Surface and Interface Dynamics. 7-12 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga,: "Inter-surface diffusion of Ga in GaAs MBE on non-panner substrates studied by microprobe-RHEED/SEM MBE system"One-Day Workshop on JRCAT Surface Science Activities. 2 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Kousai, A. Yamashiki, T. Nishinaga,: "Real-Time Observations of the Ridge Shrinkage Process on the GaAs (001) Patterned Substrate and its Theoretical Analysis"Record of the 16th Electronic Materials Symposium. 67-70 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Masuda, T. Nishinaga,: "The As/Ga Ratio Dependence of Step Bunching on GaAs (111) B Vicinal Surface as Studied by Microprobe-RHEED/SEM MBE"Record of the 16th Electronic Materials Symposium. 71-74 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, T. Nishinaga,: "Temperature Dependence of Inter-surface Diffusion between (001) and (110) in Molecular Beam Epitaxy"Record of the 16th Electronic Materials Symposium. 75-78 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki, T. Nishinaga,: "In-Situ Observation of Ridge Structure Growing on GaAs (001) Line-Patterned Substrate in Molecular Beam Epitaxy"Proc. 27th State-of the Art Program on compound semiconductors(SOTAPOCSXXVII). 166-170 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga,: "Real Time Monitoring of GaAs Microstructure Fabrication by Microprobe-RHEED/SEM MBE"Proc. 27th State-of the Art Program on compound semiconductors(SOTAPOCSXXVII). 149-153 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga,: "Micro-channel epitaxy -Concept and application to highly lattice mismatched hetero-epitaxy"Romanian Conference on Advanced Materials. P. L. I (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Yamashiki, T.Nishinaga,: "Growth parameter dependence of (001)-(110) inter-surface diffusion in MBE of GaAs"Proc. 2nd Symp. On Atomic-scale Surface and Interface Dynamics. 13-18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Kousai, A. Yamashiki, T. Nishinaga,: "Experimental and theoretical studies on the inter-surface diffusion of Ga in fabrication process of GaAs micro-structures by MBE"Proc. 2nd Symp. On Atomic-scale Surface and Interface Dynamics. 19-24 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Masuda, T. Nishinaga,: "Growth condition dependence of step bunching in MBE of GaAs on (111) B vicinal surface"Proc. 2nd Symp. On Atomic-scale Surface and Interface Dynamics. 25-30 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto, T. Noda, Y. Nkamura, H.Sakaki and T. Nishinaga,: "Elimination of growth on (111) B Side Faces by Rotating Substrate in Fabrication of GaAs Mesa-Structure by MBE,"First International School on Crystal Growth Techonology. 781-782 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Masuda and T.Nishinaga,: "Macrostep formation and growth condition dependence in MBE of GaAs (111) B vicinal surface"Journal of Crystal Growth,. 198/199. 1908-1103 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Kousai, A. Yamashiki, T. Nishinaga,: "Real-time observation of mesa shrinkage process in MBE of GaAs on (111) B patterned substrates substrates and theoretical analysis"Journal of Crystal Growth,. 198/199. 1119-1124 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Yamashiki and T. Nishinaga,: "Arsenic pressure dependence of incorporation diffusion length on (001) and (110) surface and inter-surface diffusion in MBE of GaAs"Journal of Crystal Growth,. 198/199. 1125-1129 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga and A. Yamashiki,: "Recent understandings of elementallly growth processes in MBE of GaAs"Thin Solid Films,. 343-344. 495-499 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto, T. Nishinaga, S. Naritsuka, T. Noda, Y. Nakamura, H.Sakaki and: "(111) B growth elimination in GaAs MBE of (001)-(111) B mesa structure"Proceedings of the Third Symposium on Atomic-Scale Surface and Interface Dynamics. 349-354 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Nishinaga,: "Elemental Growth Process of MBE"First International School on Crystal Growth Techonology and Advanced Materials in Brazil. 108-117 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto, T. Noda, Y. Nakamura, H.Sakaki and T. Nishinaga,: "Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication"J. Crystal Growth.. 209. 591-598 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto, T. Nishinaga, S. Naritsuka, T. Noda, Y. Nakamura, H.Sakaki and: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"Journal of Crystal Growth,. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Ogura and T. Nishinaga,: "Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams"Journal of Crystal Growth,. 211. 416-420 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto, T. Ogura, A. Yamashiki, T. Nishinaga, S. Naritsuka,S. Natitsuka and H.Sakaki,: "Real time detection of 2D-nucleation on (111)B side microfacet of mesa-structure in MBE of GaAs"Proceedings of the Third Symposium on Atomic-Scale Surface and Interface Dynamics. 17-22 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Ogura, D. Kishimoto and T. Nishinaga,: "Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication"Proceedings of the Third Symposium on Atomic-Scale Surface and Interface Dynamics. 23-28 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. W. Ren, T. Nishinaga: "Scanning Electron Microscopy of InAs Aggregation on GaAs Vicinal Surfaces in Molecular Beam Epitaxy"J. Crystal Growth. 179. 32-36 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X. Q. Shen, H. W. Ren, T. Nishinaga: "Initial Growth Behavior of Disk-Shaped Mesas in GaAs Molecular Beam Epitaxy on GaAs (111) B Substrates"J. Crystal Growth. 177. 175-180 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, X. Q. Shen, T. Nishinaga: "Arsenic Pressure Dependence of Pure Two-Face Inter-Surface Diffusion between (OO1) and (111) B in Molecular Beam Epitaxy of GaAs"J. Crystal Growth. 174. 539-543 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga: "Inter-surface Diffusion of Ga on GaAs Non-planar Substrate and its Real Time Control by Microprobe-RHEED/SEM MBE"Cryst. Res. Technol.. 32. 1049-1055 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga, A. Yamashiki, X. Q. Shen: "Arsenic Pressure Dependence of Inter-Surface Diffusion in MBE of GaAs studied by the Microprobe- RHEED/SEM MBE System"Thin Solid Films. 306. 187-191 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Masuda and T. Nishinaga: "Macrostep formation and growth condition dependence in MBE of GaAs (111) B vicinal surface"J. Crystal Growth. 198/199. 1908-1103 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Kousai. A. Yamashiki, T. Ogura and T, Nishinaga: "Real-time observation of mesa shrinkage process in MBE of GaAs on (111) B patterned substrates and theoretical analysis"J. Crystal Growth. 198/199. 1119-1124 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki and T. Nishinaga: "Arsenic pressure dependence of incorporation diffusion length on (001) and (110) surface and inter-surface diffusion in MBE of GaAs"J. Crystal Growth. 198/199. 1125-1129 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga and A. Yamashiki: "Recent understandings of elementally growth processes in MBE of GaAs"Thin Solid Films. 343/344. 495-499 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D. Kishimoto, T. Noda, Y. Nakamura, H. Sakaki and T. Nishinaga: "(111) B growth elimination in GaAs MBE of (001)-(111) B mesa structure by suppressing 2D-nucleation"J. Crystal Growth. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ogura and T. Nishinaga: "Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams"J. Crystal Growth. 211. 416-420 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga, A. Yamashiki, X. Q. Shen: "Inter-surface Diffusion of GaAs Non-Planar Substrate Studied by Microprobe-RHEED/SEM MBE"AIC-DGKK Joint Annual Meeting. 15 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga: "Arsenic Pressure Dependence of Inter-surface diffusion between (001) and (111) B in MBE of GaAs"Proc. 2nd. Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach. 65-70 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga: "Inter-surface Diffusion in MBE of GaAs on non-planar substrate studied by microprobe-RHEED/SEM MBE system"Proc. 1st. Symp. on Atomic-scale Surface and Interface Dynamics. 7-12 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga: "Inter-surface diffusion of Ga in GaAs MBE on non-planar substrates studied by microprobe-RHEED/SEM MBE system"One-Day Workshop on JRCAT Surface Science Activities. 2 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Kousai, A. Yamashiki, T. Nishinaga: "Real-Time Observations of the Ridge Shrinkage Process on the GaAs (001) Patterned Substrate and its Theoretical Analysis"Record of the 16th Electronic Materials Symposium. 67-70 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Masuda, T. Nishinaga: "The As/Ga Ratio Dependence of Step Bunching on GaAs (111) B Vicinal Surface as Studied by Microprobe-RHEED/SEM MBE"Record of the 16th Electronic Materials symposium. 71-72 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga: "Temperature Dependence of Inter-surface Diffusion between (001) and (110) in Molecular Beam Epitaxy"Record of the 16th Electronic Materials Symposium. 75-78 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga: "In-Situ Observation of Ridge Structure Growing on GaAs (001) Line-Patterned Substrate in Molecular Beam Epitaxy"Proc. 27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 166-170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga: "Real Time Monitoring of GaAs Microstructure Fabrication by Microprobe-RHEED/SEM MBE"Proc. 27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 149-153 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Yamashiki, T. Nishinaga, A. Yamashiki, T. Nishinaga: "Growth parameter dependence of (001)-(110) inter-surface diffusion In MBE of GaAs"Proc. 2nd Symp. on Atomic-scale Surface and Interface Dynamics. 13-18 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Kousai, A. Yamashiki, T. Nishinaga: "Experimental and theoretical studies on the inter-surface diffusion of Ga in fabrication process of GaAs micro-structures by MBE"Proc. 2nd Symp. on Atomic-scale Surface and Interface Dynamics. 19-24 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Masuda, T. Nishinaga: "Growth condition dependence of step bunching in MBE of GaAs on (111) B vicinal surface"Proc, 2nd Symp. on Atomic-scale Surface and Interface Dynamics. 25-30 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] 13) D. Kishimoto, T. Noda, Y. Nakamura, H. Sakaki and T. Nishinaga: "Elimination of growth on (111) B Side Faces by Rotating Substrate in Fabrication of GaAs Mesa-Structure by MBE, Lecture Notes"First International School on Crystal Growth Technology. 781-782 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D. Kishimoto, T. Nishinaga, S. Naritsuka, T. Noda, Y. Nakamura and H. Sakaki: "(111) B growth elimination in GaAs MBE of (001)-(111) B mesa structure"Proceedings of The Third Symposium on Atomic-Scale Surface and interface Dynamics. 349-354 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Toyoda, T. Ogura, A. Yamashiki and T. Nishinaga: "Surface diffusion length of Ga adatom incorporation in MBE on (001) GaAs surface with AsィイD22ィエD2 flux"Extended Abstracts of the 18th Electronic Materials Symposium. 191-194 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ogura, K. Toyoda and T. Nishinaga: "Molecular species dependence of As incorporation efficiency in MBE of GaAs"Extended Abstracts of the 18th Electronic Materials Symposium. 195-198 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Nishinaga: "Elemental Growth Process of MBE"Lecture Notes. First International School on Crystal Growth and Advanced Materials in Brazil. 108-117 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D. Kishimoto, T. Ogura, A. Yamashiki, T. Nishinaga, S. Natitsuka and H. Sakaki: "Real time detection of 2D-nucleation on (111) B side microfacet of mesa-structure in MBE of GaAs"Proceedings of The Fourth Symposium on Atomic-Scale Surface and Interface Dynamics. 17-22 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Ogura, D. Kishimoto and T. Nishinaga: "Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication"Proceedings of The Fourth Symposium on Atomic-Scale Surface and Interface Dynamics. 23-28 (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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