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1999 Fiscal Year Final Research Report Summary

In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring Methods

Research Project

Project/Area Number 09450009
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture & Technology

Principal Investigator

KOUKITU Akinori  Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Associate Prof., 工学部, 助教授 (10111626)

Co-Investigator(Kenkyū-buntansha) SEKI Hisashi  Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Prof., 工学部, 教授 (70015022)
Project Period (FY) 1997 – 1999
KeywordsGaAs / hydrogen-chemisorption / in situ monitoring / surface reconstruction / adsorption with dissociation / surface photo absorption / first principle calculation
Research Abstract

In this study, the growth reaction and the reconstruction structure at the surface was investigated, using (1) in situ gravimetric and optical monitoring systems and (2) ab initio calculation. The results are listed below.
1. In situ monitoring of hydrogen-chemisorption on GaAs (001), GaAs (111) B and GaAs (111)A surfaces was performed, and the hydrogen-chemisorption mechanism was clarified.
2. Heat of chemisorption was obtained, which indicated that the chemisorption process was endthermic reaction.
3. By ab inition calculation, it is found that hydrogen molecule attacked both atoms of Ga and As on the surface and Ga atoms on the first layer and As atoms on the second layer were terminated by hydrogen atoms.

  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] A. Koukitu: "In Situ Monitoring of Hydrogen Adsorption on (001) Ga surface in GaAs Atomic Layer Epitaxy"Applied Surface Science. 112. 63-68 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "Thermodynamic Analysis of Hydride vapor Phase Epitaxy of GaN"Jpn. J. Appl. Phys.. 37. 762-765 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Taki: "Substitution Reaction of Surface Adsorbed P Atoms to As Atoms in the GaP/GaAs Atomic Layer Epitaxy"J. Crystal Growth. 183. 75-80 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Taki: "In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111)B Ga Surface"Jpn. J. Appl. Phys.. 37. 766-770 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Taki: "Investigation of Arsenic Desorption from GaAs(111)B Surface in Atomospheric Pressure Atomic Layer Epitaxy"Jpn. J. Appl. Phys.. 37. L379-L381 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method"Jpn. J. Appl. Phys.. 38. 4980-4982 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Taki: "Investigation of Thickness Dependence of Hexagonal component in Cubic GaN Film Growth on GaAs (001) by MOVPE"Blue Laser and Light Emitting Diodes II, Ohmsha. 113-116 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "Thermodynamic Study on the Role of Hydorogen during the MOVPE Growth of Group III Nitrides"J. Crystal Growth. 197. 99-105 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "In Situ Monitoring of Arsenic Desorption on GaAs(111)B Surface in Atomic Layer Epitaxy"J. Crystal Growth. 198/199. 1111-1118 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu: "Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine"Physica Status solidi. 216. 707-712 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. KUMAGAI: "Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy"Jpn. J. Appl. Phys.. 39. L149-L151 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. KUMAGAI: "In Situ Gravimetric Monitoring of Halogen Transport Atomic Layer Epitaxy of Cubic-GaN"Applied Surface Science. (in press9.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Koukitu, T. Taki: "In Situ Monitoring of Hydrogen Adsorption on (001) Ga Surface in GaAs Atomic layer Epitaxy"Applied Surfece Science. 112. 63-68 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Koukitu, S. Hama, T. Taki, H. Seki: "Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN"Jpn. J. Appl. Phys.. 37. 762-765 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Taki, T. nakajima, A. Koukitu, H. Seki: "Substitution Reaction of Surface Adsorbed P Atoms to As Atoms in the GaP/GaAs Atomic Layer Epitaxy"J. Crystal Growth. 183. 75-80 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Taki, A. Koukitu: "In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111) B Ga Surface"Jpn. J. Appl. Phys.. 37. 766-770 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Taki, K. Narita, A. Koukitu, H. Seki: "Investigation of Arsenic Desorption from GaAs(111)B Surface in Atmospheric Pressure Atomic Layer Epitaxy"Jpn. J. Appl. Phys.. 37. L379-L381 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Koukitu, Y. Kumagai, T. Taki, H. Seki: "Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitoring by In Situ Gravemetric Method"Jpn. J. Appl. Phys.. 38. 4980-4982 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Taki, A. Koukitu, H. Seki: "Investigation of Thickness Dependence of Hexagonal Component in Cubic GaN Film Growth on GaAs(001) by MOVPE"Blue Laser and Light Emitting Doides II, Ohmsha. ISBN 4-274-90245-5 C3050. 113-116 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Koukitu, T. Taki, N. Takahashi, H. Seki: "Thermodynamic Study on the Role of Hydrogen during the MOVPE Growth of Group III Nitrides"J. Crystal Growth. 197. 99-105 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Koukitu, T. Taki, K. Narita, H. Seki: "In Situ Monitoring of Arsenic Desorption on GaAs(111)B Surface in Atomic layer Epitaxy"J. Crystal Growth. 198/199. 1111-1118 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Koukitu, Y. Kumagai, N. Kubota, H. Seki: "Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors using Hydrazine"Physica Status Solidi. 216. 707-712 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Kumagai, A. Koukitu and H. Seki: "Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111) B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy"Jpn. J. Appl. Phys.. 89. L149-L151 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Kumagai, M. Mayumi, A. Koukitu and H. Seki: "In Situ Gravimetric Monitoring of Halogen Transport Atomic Layer Epitaxy of Cubic-GaN"Applied Surface Science. (in Press).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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