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1998 Fiscal Year Final Research Report Summary

Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction

Research Project

Project/Area Number 09450016
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

UMENO Masataka  Osaka Univ., Graduate School of Eng., Professor, 大学院・工学研究科, 教授 (50029071)

Co-Investigator(Kenkyū-buntansha) 益子 洋治  三菱電機(株), ULSI開発研究所, グループマネージャ(
SHIMURA Takayoshi  Osaka Univ., Graduate School of Eng., Research Associate, 大学院・工学研究科, 助手 (90252600)
YOHJI Mashiko  Mitsubishi Electric Corp., ULSI Iab., Group Manager (researcher)
Project Period (FY) 1997 – 1998
KeywordsX-ray diffraction / CTR scattering / Microdevice / Microstructure / silicon
Research Abstract

Microstructures of ditches were formed on the Si(O01) surfaces by lithography and chemical etching with KOH.The width of the ditches ranges from 0.2 to 5.0mum.
The ratio of the width and the space of the ditches ranges from 1 : 1 to 1 : 20. The size of each area was 1.0x2.Omm^2. The shape of the gratings were confiqried by atomic force microscopy, indicating that they have V shape. X-ray diffraction patterns were observed around the 111 Bragg point in the symmetrical setting. The effective surface area was limited by placing slits of 0.5mm wide and Ge channel cut crystal before the samples and the detector so that the X-ray diffraction patterns from the neighboring areas were measured separately. The periodic length of the gratings and the direction of the slopes were estimated from the diffraction patterns from the several areas. The intensity distributions calculated by Fourie transform were similar to those of the observations. Furthermore, the diffraction patterns were successfully observed from the thermally oxidized gratings. They were almost as same as those form the non-oxidized ones, while the intensity distributions showed slight asymmetry around the Bragg point. It is considered that the intensity distribution give us the information not only about the shape of the crystal, but also the crystal structure in the microstructure, such as lattice relaxation, because the asymmetry could not be interpreted only by the shape effect.

  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] Takayoshi Shimura: "Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layers on Si" Cryst.Res.Technol.33. 637-642 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takayoshi Shimura: "Ordered Structure in Buried Oxide Layers of SOI wafers" Jpn.J.Appl.Phys.(in press). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takayoshi Shimura: "Analysis of Ordered Structue of Buried Oxide Layers in SIMOX Wafers" Proceedings of 9th Int.Symp.on Silicon on Insulator. (in press). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takayoshi Shimura, Hiroo Sensui, and Masataka Umeno: ""Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layrs on Si"" Cryst.Res.Technol.33. 637-642 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takayoshi Shimura, Tkuji Hosoi, Eijri Riho, and Masataka Umeno: ""Ordered Structure in Buried Oxide Layrs of SOI wafers"" Jpn.J.Appl.Phys.(in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno: ""Analysis of ordered structure of buried oxide layrs in SIMOX wafers"" Proceedings of the 9th Intermational Symposium on Silicon-on-Insulator Technology and Devices. (in press).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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