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1998 Fiscal Year Final Research Report Summary

Surface Modification of Hydrogen-Terminated Silicon Substrate using Extra-Low Energy Electron Beam

Research Project

Project/Area Number 09450017
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

OURA Kenjiro  Osaka University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (60029288)

Co-Investigator(Kenkyū-buntansha) WATAMORI Michio  Osaka University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (80222412)
KATAYAMA Mitsuhiro  Osaka University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (70185817)
Project Period (FY) 1997 – 1998
Keywordselectron-stimulated desorption / extra-low energy electron / surface hydrogen / desorption cross-section / hydrogen termination / Germanium / Silicon
Research Abstract

Electron-stimulated desorption (ESD) of hydrogen from hydrogen-terminated Si substrates is expected for versatile applications in nano-fabrication in connection with surface modifications with use of electron beam patterning. In the electron beam patterning of hydrogen-terminated substrates, e-beam with high energy of 20-50 keV is usually used, which causes thermal desorption of hydrogen as well as ESD.In order to suppress the thermal effect by e-beam and to realize local removal of surface hydrogen caused only by ESD, it is necessary to adopt extra-low energy electrons with 10 eV order. For this purpose, it is of great importance to elucidate the mechanism of ESD in the extra-low energy region. The purpose of this research project is to fundamentally elucidate the surface modification process of hydrogen-terminated Si substrates on atomic scale.
With use of newly introduced low-energy electron gun, we performed in-situ observation of ESD processes of hydrogen from hydrogen-terminated Si(100) and Ge/Si( 100) surfaces using time-of-flight elastic recoil detection analysis (TOF-ERDA), and obtained the electron energy dependence of ESD cross-section of hydrogen in the extra-low energy region. The result worthy of special mention was that we obtained interesting findings on the mechanism of ESD of hydrogen from hydrogen-terminated Si(l00) ; namely, (1) threshold electron energy of ESD was about 23 eV, and (2) the mechanism of ESD was related to the core band excitation in which Auger decay of a core hole occurred in a covalent Si-H bond, leading to a multi-hole final state in the bonding orbital and desorption of H.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] M.Watamori 他4名: "Reconstruction and growth of Ag on Hydrogen-terminated Si(III) surfaces" Appl.Surf.Sci.113/114. 448-452 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Oura 他5名: "Quasi-modium energy ion scattering spectroscopy observation of a Ge g-doped layer fabricated by hydrogen mediated epitaxy" Jpn.J.Appl.Phys.37. 2625-2628 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Katayama 他4名: "The effect of hydrogen termination on In growth on Si(100) surface" Surf.Sci.401. L425-L431 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Oura 他4名: "Electron stimulated desorption of hydrogen from H/Si(001)-lxl surface studied by TOF-ERDA" Surf.Sci.420. 81-86 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Katayama 他5名: "Adsorption of H on the Ge/Si(001) surfaces as studied by TOF-ERDA and CAICISS" Jpn.J.Appl.Phys.38(印刷中). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Oura 他4名: "Total cross-section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by TOF-ERDA" Jpn.J.Appl.Phys.38(印刷中). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohba, I.Katayama, Y.Yamamoto, M.Watamori and K.Oura: ""Reconstruction and Growth of Ag on Hydrogen-Terminated Si (111) Surfaces"" Appl.Surf.Sci.113/114. 448-452 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fuse, K.Kawamoto, T.Shiizaki, E.Tazou, M.Katayama and K.Oura: ""Quasi-Medium Energy Ion Scattering Spectroscopy Observation of a Ge delta-doped Layr Fabricated by Hydrogen Mediated Epitaxy"" Jpn.J.Appl.Phys.37. 2625-2628 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.-T.Ryu, K.Kui, K.Noda, M.Katayama and K.Oura: ""The Effect of Hydrogen Termination on In Growth on Si (100) Surface"" Surf.Sci.401. L425-L431 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fuse, T.Fujino, J.-T.Ryu, M.Katayama and K.Oura: ""Electron Stimulated Desorption of Hydrogen from H/Si (001) -1x1 Surface Studied by TOF-ERDA"" Surf.Sci.420. 81-86 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fuse, J.-T.Ryu, T.Fujino, K.Inudzuka, M.Katayama and K.Oura: ""Adsorption of H on the Ge/Si (001) Surfaces as Studied by TOF-ERDA and CAICISS"" Jpn.J.Appl.Phys.38(in press). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fuse, T.Fujino, J.-T.Ryu, M.Katayama and K.Oura: ""Total Cross-Section of Electron Stimulated Desorption of Hydrogen from Hydrogen-Terminated Ge/Si (001) as Observed by TOF-ERDA"" Jpn.J.Appl.Phys.38(in press). (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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