1999 Fiscal Year Final Research Report Summary
Thermophysical Properties of Molten Silicon
| Project/Area Number |
09450096
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thermal engineering
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| Research Institution | Keio University |
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Principal Investigator |
NAGASAKA Yuji Keio Univversity, System Design Eng., Professor, 理工学部, 教授 (40129573)
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| Co-Investigator(Kenkyū-buntansha) |
NAGASHIMA Akira Keio Univversity, System Design Eng., Professor, 理工学部, 教授 (80051514)
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| Project Period (FY) |
1997 – 1999
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| Keywords | Molten Silicon / Thermophysical Properties / Measurement Techniques / Molecular Simulation / Standard Reference Data |
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| Research Abstract |
The results obtained from the present research are summarized as follows.
(1) Molecular Simulation
Vapor-liquid equilibrium simulation were performed using the Stillinger-weber potential with the Gibbs ensemble Monte Carlo method. In the low temperature region from about 3000 to 3500 K, our calculation show the stability of phases and good agreement with several experimental results. On the whole, there is little dependence on the size of the system except near the critical point of silicon: TィイD2cィエD2=7500±500 K and ρィイD2cィエD2=750±100 kgmィイD1-3ィエD1 as determined by the law of rectilinear diameter.
(2) Surface Laser-Light scattering Method
In order to improve and evaluate the accuracy of the surface laser-light scattering (SLLS) apparatus, we have measured the surface tension and viscosity of molten NaCl in the temperature range up to 1243 K. The accuracy of the measured surface tension is estimated to be ±4.1%. The surface tension and viscosity of molten silicon (99.9995%) have been measured in the temperature range from 1685 to 1850 K. The obtained surface tension has been correlated by the following equation: σ=800-0.13(T-1685) mNmィイD1-1ィエD1 The oxygen concentration in the sample after the experiment was analyzed.
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