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1999 Fiscal Year Final Research Report Summary

Fabrication of quantum dots with visible light emission and study of its stimulated emission

Research Project

Project/Area Number 09450119
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

SUEMUNE Ikuo  Hokkaido Univ., Res. Inst. For Elect. Sci., Prof., 電子科学研究所, 教授 (00112178)

Co-Investigator(Kenkyū-buntansha) UESUGI Katsuhiro  Hokkaido Univ., Res. Inst, for Elect. Sci., Res. Associate, 電子科学研究所, 助手 (70261352)
Project Period (FY) 1997 – 1999
Keywordsblue semiconductor lasers / quantum dots / blue-shift / nanolithography / AFM / selective growth / MOMBE / MOVPE
Research Abstract

The special type of the density of states in quantum dots and wires are expected to have the capability to improve the performance of semiconductor lasers. The researches toward this direction are now mainly promoted on the infrared InGaAS systems. However for the applications such as the high-density optical information processing and storage and also for increasing the absorption coefficient of Silicon photodetectors to have small integrated photonic devices in optoelectronic integrated circuits, visible and especially short wavelength semiconductor lasers with high performance and high efficiency are necessary. Excitons and excitonic molecules confined in quantum dots are predicted to have the large oscillator strength or large optical gain. Therefore if such a situation is prepared with wide bandgap semiconductors with their large exciton binding energies, the possibility to realize such a high-performance short wavelength lasers will be high.
In this project, CdSe, ZnSe, CdS wide b … More andgapsemiconductor quantum dots were studied. The instability due to the Ostwald ripening in CdSe dots, much higher stability in ZnSe and CdS quantum dots, the blue shift of the light emission in ZnSe quantum dots due to the quantum confinement effect, the study of the type II band lineup in CdS/ZnSe heterostructures, the role of the energy conservation in the energy relaxation processes in the CdS quantum dots during the longitudinal optical phonon emission were studied. It was also shown that CdS/ZnMgCdS heterostructures are type I and this will prove to be effective to have the higher luminescence efficiency. For the purpose of realizing the strong coupling between the quantum dots and the optical field, AFM nanolithography was developed and the fabrication of quantum dot array with the period of 100nm could be fabricated. The stimulated emission based on these structures are now under study, but the stimulated emission in doped GaN was observed in the ultra-violet wavelength region. Less

  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] I.Suemune: "Semiconductor Photonic Dots : Visible-Wavelength-Sized Optical Resonators"Appl.Phys.Lett.. 74,14. 1963-1965 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Avramescu: "Nucleation in the Nanometer Scale Selective Area Grouth of II-VI Semiconductors"Jpn.J.Appl.Phys.. 38,5B. L563-L566 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Ueta: "Nucleation and Faceting in Selectively Grown 2nS Pyramiclal Dot Array for Short-wavelength Light Emitters"Jpn.J.Appl.Phys.. 38,7A. L710-L713 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Tawara: "Growth and Luminescence Properties of Solt-organized ZnSe Quantum Dots"Appl.Phys.Lett.. 75,2. 235-237 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Ueta: "Fabrication of Selectively Grown II-VI Widegap Semiconductor Photonic Dots on (001) GaAs with MOMBE"J.Cryst.Growth. 209. 518-521 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Ueta: "Enhancement of Spantaneous Emission by ZnS-based II-VI Semiconductor Photonic Dots"J.Cryst.Growth. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 末宗幾夫: "日本表面科学会編「図解・薄膜技術」"培風館. 272 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 末宗幾夫: "「半導体大辞典」"工業調査会. 2011 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Suemune: "Semiconductor Photonic Dots : Visible-Wavelength-Sized Optical Resonators"Appl. Phys. Lett. 74, 14. 1963-1965 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Avramescu: "Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors"Jpn. J. Appl. Phys.. 38, 5B. L563-L566 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ueta: "Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-wavelength Light Emitters"Jpn. J. Appl. Phys.. 38, 7A. L710-L713 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Tawara: "Growth and Luminescence Properties of Self-organized ZnSe Quantum Dots"Appl. Phys. Lett.. 75, 2. 235-237 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ueta: "Fabrication of Selectively Grown II-VI Widegap Semiconductor Photonic Dots on (001) GaAs with MOMBE"J. Cryst. Growth. 209. 518-521 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ueta: "Enhancement of Spontaneous Emission by ZnS-based II-VI Semiconductor Photonic Dots"(to be published).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I. Suemune: "edited by T. Sugano and T. Kawanishi, Kogyo-chosakai"Handoutai Daijiten (in Japanese). 2011 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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