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1999 Fiscal Year Final Research Report Summary

Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals

Research Project

Project/Area Number 09450121
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionUniversity of Tsukuba

Principal Investigator

HASEGAWA Fumio  University of Tsukuba, Institute of Applied Physics, Professor, 物理工学系, 教授 (70143170)

Co-Investigator(Kenkyū-buntansha) SUEMASU Takashi  University of Tsukuba, Institute of Applied Physics, Lecturer, 物理工学系, 講師 (40282339)
Project Period (FY) 1997 – 1999
Keywordsβ-FeSi_2 / light-emitting diode / MBE / mobility / infrared / optical interconnection
Research Abstract

Semiconducting β-FeSi_2 has been attracting much attention as a promising material for opto-electronic devices on Si substrates. Purpose of this work is to obtaine high quality β-FeSi_2 films on Si (001) substrates and furthermore to fabricate light-emitting diodes which can be used as light sources in optical inter-connections. Achievements in this project are as follows.
1. [100]-oriented high quality β-FeSi_2 films were obtained.
The β-FeSi_2 films were fabricated by annealing nanometer-thick Si/Fe multilayers deposited on a Si (001) substrate using epitaxial β-FeSi_2 as a template and a SiO_2 capping layer. The SiO_2 capping layer prevented aggregation of β-FeSi_2 against heating. The conduction type of the β-FeSi_2 films was controlled by deposited Si/Fe ratios of the β-FeSi_2. The maximu electron and hole mobilitis were 6900cm^2/ Vs and 13000cm^2/Vs at about 50 K, for the p-type and n-type p-FeSi_2 films, respectively. These are the highest values ever reported.
2. Room temperature 1.6μm electroluminescence was realized from a Si p-n diode with β-FeSi_2 active region for the first time.
The β-FeSi_2 was grown by reactive deposition epitaxy, and embedded in Si by molecular beam epitaxy (MBE). The 1.6μm electroluminescence (EL) was observed at RT for injected current density above 10A/cm^2. Realization of this EL was attributed to embedding β-FeSi_2 by MBE-Si at relatively low temperature of 500℃, and using suitable Si substrates with small oxygen concentrations.

  • Research Products

    (34 results)

All Other

All Publications (34 results)

  • [Publications] K.Takakura: "Donor and Acceptor Levels in Undoped β-FeSi_2 Continuous Films Prepared from Si/Fe Multilayers on Si (001) Substrates"Jpn.J.Appl.Phys.. Vol.40,No.38. L249-L251 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Dependence of photoluminescence from β-FeSi_2 and induced deep levels in Si on the size of embedded β-FeSi_2 balls in Si"Thin Solid Films. Vol.381. 209-213 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Room Temperature 1.6μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region"Jpn.J.Appl.Phys.. Vol.39,No.10B. L1013-L1015 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Optimum annealing condiction for 1.5μm photoluminescence from reactive deposition epitaxy β-FeSi_2 balls embedded in Si crystals"J.Luminescence. Vol.87-89. 528-531 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 末益崇: "分子線エピタキシー法によるβ-FeSi_2球のSi中埋込み構造作製と高温アニールによる赤外フォトルミネッセンスの増大"レーザー研究. Vol.28,No.2. 99-102 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 末益崇: "熱反応堆積法を利用した赤外発光β-FeSi_2球及び高移動度β-FeSi_2膜の作製:高温アニールによる特性改善"材料科学. Vol.37,No.1. 16-20 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Takakura: "Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001) by High Temperature Annealing"Jpn.J.Appl.Phys.. Vol.39,No.3A/B. L233-L236 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Takakura: "Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios"Jpn.J.Appl.Phys.. Vol.39,No.8A. L789-L791 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 末益崇: "環境にやさしい直接遷移型半導体β-FeSi_2の研究の現状と将来展望"応用物理. Vol.39,No.7. 804-810 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Takakura: "Growth of Mn doped epitaxial β-FeSi_2 films on Si(001) substrates by reactive deposition epitaxy"Thin Solid Films. Vol.369. 253-256 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates"Jpn.J.Appl.Phys.. Vol.38,No.8A. L878-L880 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Improvement of 1.5μm Photoluminscence from Reactive Deposition Epitaxy Grown β-FeSi_2 Balls in Si by High Temperature Annealing"Jpn.J.Appl.Phys.. Vol.38,No.6A/B. L620-L622 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Fabrication of p-Si/β-FeSi_2 Balls/n-Si Structures by MBE and their Electrical and Optical Properties"J. Luminescence. Vol.80. 473-477 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Photoluminscence from RDE Grown β-FeSi_2 Balls Embedded in Si Crystals"Jpn.Appl.Phys.. Vol.37,No.12B. L1513-L1516 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Fabrication of Si/β-FeSi_2/Si (001) Structures by Reactive Deposition Epitaxy"J.Jpn.Soc.Crystal Growth. Vol.25,No.1. 46-54 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrates by Reactive Deposition Epitaxy"Jpn.J.Appl.Phys.. Vol.37,No.3B. L333-L335 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu: "Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth"Jpn.J.Appl.Phys.. Vol.36,No.9A/B. L1225-L1228 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Suemasu, M.Tanaka, T.Fujii, S.Hashimoto, Y.Kumagai and F.Hasegawa: "Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth"Jpn.J.Appl.Phys.. Vol.36, No.9A/B. L1225-L1228 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, K.Takakura, M.Tanaka, T.Fujii and F.Hasegawa: "Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitax"Jpn.J.Appl.Phys.. Vol.37, No.3B. L333-L335 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu and F.Hasegawa: "Fabrication of Si/β-FeSi_2 /Si(001) Structures by Reactive Deposition Epitaxy"J.Jpn.Soc.Crystal Growth. Vol.25, No.1. 46-54 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, T.Fujii, Y.Iikura, K.Takakura and F.Hasegawa: "Photoluminescence from RDE Grown β-FeSi_2 Balls Embedded in Si Crystals"Jpn.J.Appl.Phys.. Vol.37, No.12B. L1513-L1516 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, T.Fujii, K.Takakura, Y.Iikura and F.Hasegawa: "Fabrication of p-Si/β-FeSi_2 Balls/n-Si Structures by MBE and their Electrical and Optical Properties"J.Luminescence. Vol.80. 473-477 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, Y.Iikura, T.Fujii, K.Takakura, N.Hiroi and F.Hasegawa: "Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy Grown β-FeSi_2 Balls in Si by High Temperature Annealing"Jpn.J.Appl.Phys.. Vol.38, No.6A/B. L878-L880 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, N.Hiroi, T.Fujii, K.Takakura, Y.Iikura and F.Hasegawa: "Growth of Continuous and Highly (100)-oriented β-FeSi_2 Films on Si (001) from Si/Fe Multilayers with SiO_2 Capping and Templates"Jpn.J.Appl.Phys.. Vol.38, No.8A. L878-L880 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Takakura, T.Suemasu and F.Hasegawa: "Growth of Mn Doped-β-FeSi_2 Films on Si (001) by Reactive Deposition Epitaxy"Thin Solid Films. Vol.369, No.1-2. 253-256 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, Y.Iikura, K.Takakura, N.Hiroi and F.Hasegawa: "Optimum annealing condition for 1.5μm photoluminescence from reactive deposition epitaxy β-FeSi_2 balls embedded in Si crystals"J.Luminescence. Vol.87-89. 528-531 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, Y.Iikura, K.Takakura and F.Hasegawa: "Fabrication of b-FeSi2 Spheres Embedded in Si by Molecular Beam Epitaxy and Enhancement of the Infrared Photoluminescence by High Temperature Annealing"Review of Laser Engineering. Vol.28, No.2. 99-102 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Takakura, T.Suemasu, N.Hiroi and F.Hasegawa: "Improvement of the Electrical Properties of β-FeSi_2 Films on Si (001) by High Temperature Annealing"Jpn.J.Appl.Phys.. Vol.39, No.3A/B. L233-L236 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu and F.Hasegawa: "Current staus and future prospects of β-FeSi_2 research : An environmentally friendly and direct-band-gap semiconductor"Oyobutsuri. Vol.39, No.7. 804-810 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Takakura, T.Suemasu Y.Ikura and F.Hasegawa: "Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios"Jpn.J.Appl.Phys.. Vol.39, No.8A. L789-L781 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, K.Takakura, Y.Iikura, N.Hiroi and F.Hasegawa: "Infrared Luminescence from β-FeSi_2 Balls and Fabrication of High Mobility β-FeSi_2 Films Using Reactive Deposition Epitaxy : Improvements by High Temperature Annealing"J.Mater.Res.Soc.of Japan. Vol.37, No.1. 16-20 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, Y.Negishi, K.Takakura and F.Hasegawa: "Room Temperature 1.6μm Electroluminescence from a Si Based Light Emitting Diode with β-FeSi_2 Active Region"Jpn.J.Appl.Phys.. Vol.39, No. 10B. L1013 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Suemasu, T.Fujii, K.Takakura, N.Hiroi, Y.Iikura and F.Hasegawa: "Dependence of Photoluminescence from β-FeSi_2 and Induced Deep Levels in Si on the Size of embedded β-FeSi_2 Balls in Si"Thin Solid Films. 381. 209 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Takakura, T.Suemasu and F.Hasegawa: "Donor and Acceptor Levels in Undoped High Mobility β-FeSi_2 Continuous Films Prepared from Si/Fe Multilayers on Si (001) Substrates"Jpn.J.Appl.Phys.. Vol.40, No.3B. L249 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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