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1998 Fiscal Year Final Research Report Summary

Fabrication study of multiply connected SETs by sequential depositions of semiconductor and insulator

Research Project

Project/Area Number 09450131
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

SHINGUBARA Shoso  Hiroshima University, Dept. E&E, Associate Professor, 工学部, 助教授 (10231367)

Co-Investigator(Kenkyū-buntansha) SAKAUE Hiroyuki  Hiroshima University, Dept. E&E, Research Associate, 工学部, 助手 (50221263)
TAKAHAGI Takayuki  Hiroshima University, Dept. E&E, Professor, 工学部, 教授 (40271069)
Project Period (FY) 1997 – 1998
KeywordsSingle Electron / SET / semiconductor / insulator / ultra thin film / tunneling barrier / multi-layered film
Research Abstract

We have studied the multiply connected SETs by sequential depositions of semiconductor and insulator into a nano holes. This SET is formed in a Si nano hole which is formed by RIE (reactive ion etching) of polysilicon on Si substrate and subsequent dry oxidation to shrink the hole diameter. Quantum dots are fabricated by alternating sequence of Si LPCVD deposition, etching-back, and oxidation. Finally, we have fabricated multiple Q-Dots with a surrounding side gate, and measured electrical characteristics. Unfortunately, the most devices exhibited serious leakage current between a top gate and dots. The failure mechanisms are considered to come from poor reproducibility of etching-back process using CDE. Al ; ternative approach to reduce leakage current was investigated by RIE etching-back, and suppression of the leakage current was obtained. However, the initially proposed fabrication process of SETs have difficulties in controlling dots size uniformly, and alternative approach using anodically oxidized aluminum nano holes array was investigated further, and a new methods to fabricated two dimensional array of SETs is proposed.

  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] S.Shingubara,O.Okino,Y.Sayama,H.Sakaue,T.Takahagi: "Two Dimensional Nanowire Array Formation Using Self-organized Nanoholes of Anodically Oxidized Aluminum"Jpn.J.Appl Phys. 36. 7791-7795 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Shingubara,O.Okino,Y.Sayama,H.Sakaue,T.Takahagi: "Two Dimensional Nanowire Formation on Si Substrate Using Self-organized Nanoholes of Anodically Oxidized Aluminum"Solid State Electronics. 43. 1143-1146 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Shingubara,O.Okino,Y.Sayama,H.Sakaue,T.Takahagi: "Two Dimensional Nanowire Formation Using Self-organized Nanoholes of Anodically Oxidized Aluminum"International Conference of Microprocess and Nano Technology. 61-62 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S. Shingubara, O. Okino, Y. Sayama, H. Sakaue, and T. Takahagi: "Two Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum"Jpn. J. Appl. Phys.. vol.36 No.12. 7791-7795 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Shingubara, O. Okino, Y. Sayama, H. Sakaue, and T. Takahagi: "Two Dimensional Nanowire Formation on Si Substrate Using Self-organized Nanoholes of Anodically Oxidized Aluminum"Solid State Electronics. Vol.43. 1143-1146 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Shingubara, O. Okino,Y. Sayama, H. Sakaue, and T. Takahagi: "Two Dimensional Nanowire Array Formation Using Self-organized Nanoholes of Anodically Oxidized"International Conference of Microprocess and Nano Technology. 61-62 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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