"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"

1998 Fiscal Year Final Research Report Summary

• Project/Area Number: 09555092
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 展開研究
• Research Field: Electronic materials/Electric materials
• Research Institution: HOKKAIDO UNIVERSITY
• Principal Investigator: HASHIZUME Tamotsu Hokkaido Univ., RCIQE,Ass.Pro., 量子界面エレクトロニクス研究センター, 助教授 (80149898)
• Co-Investigator(Kenkyū-buntansha): FUJIKURA Hajime Grad.School of Eng., Hokkaido Univ., Ass.Pro., 工学研究科, 助教授 (70271640) ; SEKI Shouhei Oki Electric Ind.Co., Group Leader, 研究開発本部・半導体研究所, グループリーダー ( ; WU Nan-jan Fac.of Electro-Communications, Univ.of Electro-Communications, Ass.Pro., 電気通信学部, 助教授 (00250481) ; AKAZAWA Masamichi Grad.School of Eng., Hokkaido Univ., Ass.Pro., 工学研究科, 助教授 (30212400) ; HASEGAWA Hideki Grad.School of Eng., Hokkaido Univ., Pro., 工学研究科, 教授 (60001781)
• Project Period (FY): 1997 – 1998
• Keywords: indium phosphide / Schottky barrier / interface control / electrochemical process / ultrathin Si control layer / HEMT

Research Abstract

The purpose of this study is to fabricate a high-speed InAlAs/InGaAs HEMT with Schottky gate using in-situ electrochemical process and to fabricate an insulated-gate InAIAs/InGaAs HEMT with low-power consumption using ultrathin Si interface-control technique. The main results obtained are listed below :
(1) A novel in-situ pulsed-mode electrochemical process enables us to produce good Schottky contacts on InP, InAlAs and lnGaAs with carrier transport properties according to the thermionic emission model.
(2) A Ti/n-InP contact formed by sputtering showed good ohmic characteristics after rapid thermal annealing at 500 ﾟC.
(3) A SiN/SiIn-InP structure with the minimum interface state density as low as 2x 10^<10> cm^<-2> was successfully fabricated by epitaxial growth of ultrathin Si interface control layer and its partial nitridation using ECR N_2 plasma.
(4) A small-signal response of a passivated InGaAs structure was observed over a wide frequency range from 1Hz to microwave frequencies. The complicated frequency dependence of the MIS admittance can be well fitted into an equivalent circuit based on the disorder-induced gap state (DIGS) model.
(5) A novel insulated gate InAlAs/InGaAs HEMT structure was realized by use of Si interface control layer. The minimum interface state density of 2x1010 cm^<-2> eV^<-1> was achieved.
(6) It was found that a transconductance gm of the fabricated HEMT with the Si interface control
layer was enhanced more 10 times than that of the HEMT without Si layer.

Research Products

• [Publications] K. Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique" Jpn.J.Appl.Phys.36. 1756-62 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Jpn.J.Appl.Phys.36. 1834-40 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T. Sato: "ILarge Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Jpn.J.Appl.Phys.36. 1811-8 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning free Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" J.Vac.Sci.Technol.B. 15. 1227-34 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frequencies up to Microwave Frequencies" Solid-State Electron.41. 1463-9 (1997)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] H. Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having an Ultrathin Silicon Interface Control Layer" Appl.Sur.Sci. 123/124. 6159 (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T. Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599-603 (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T. Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces" Jpn.J.Appl.Phys.37. 1626-31 (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] S. Chakraborty: "Formation of Ultrathin Oxynitride Layers on (100) Si by Low-Temperature ECR N_2O Plasma Oxynitridation Process" J.Vac.Sci.Technol.B. 16. 2159-65 (1998)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] H. Takahashi: "XPS and UHV contactless characterization of novel oxide-free InP passivation process using silicon surface quantum well" Japanese Journal of Applied Physics, in press. 38. (1999)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] M.B. Takeyama: "Interfacial Reaction and Electrical properties in the sputter-deposited Al/Ti ohmic contact to n-InP" Japanese Journal of Applied Physics, in press. 38. (1999)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] H. Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics, in press. 38. (1999)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] Y. Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN for Field Effect Transistor Applications" Solid-State Electron.,in press. 43. (1999)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] T. Hashizume: "Capacitance-voltage characterization of AlN/GaN MIS structures grown on sapphire substrate by MOCVD" Applied Physics Letters, in press. 74. (1999)
  • Description: 「研究成果報告書概要(和文)」より
• [Publications] K.Ikeya, T.Hashizume and H.Hasegawa: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Y.Dohmae, S.Suzuki, T.Hashizume and H.Hasegawa: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1996)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] T.Sato, S.Uno, T.Hashizume and H.Hasegawa: "Large Schottky Barrier Heights on Indium Phosphide-Based materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] H.Hasegawa, T.Sato and T.Hashizume: "Evolution Mechanism of Nearly-Pinning Free Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" J.Vacuum Science and Technology. B-15. 1227-1235 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] K.Iizuka, T.Hashizume and H.Hasegawa: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frequencies up to Microwave Frequencies" Solid-State Electron.41. 1463-1468 (1997)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] H.Takahashi, T.Hashizume and H.Hasegawa: ""Novel InP Metal-Insulator-Semiconductor Structure Having an Ultrathin Silicon Interface Control Layer" Appl.Sur.Sci.123/124. 615-618 (1998)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] T.Hashizume, K.Ikeya, M.Mutoh and H.Hasegawa: ""Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Interface Control Layer Formed by In-Situ ECR Plasma Nitridation" Appl.Sur.Sci.123/124. 599-602 (1998)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] T.Hashizume, Y.Ishikawa, T.Yoshida and H.Hasegawa: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Jpn.J.Appl.Phys.37. 1626-1630 (1998)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] S.Chakraborty, T.Yoshida, T.Hashizume and H.Hasegawa: "Formation of Ultrathin Oxynitride Layers on (100) si by Low-Temperature ECR N_2O Plasma Oxynitridation Process" J.Vac.Sci.Technol.B. 16. 159-216 (1998)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] H.Takahashi, T.Hashizume and H.Hasegawa: "XPS and UHV contactless characterization of novel oxide-free InP passivation process using silicon surface quantum well" Jpn.J.Appl.Phys.38 (in press). (1999)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] M.B.Takeyama, A.Noya, T.Hashizume and H.Hasegawa: "Interfacial Reaction and Electrical properties in the sputter-deposited Al/Ti ohmic contact to n-InP" Jpn.J.Appl.Phys.38 (in press). (1999)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] H.Hasegawa, Y.Koyama, T.Hashizume: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Jpn.J.Appl.Phys.38 (in press). (1999)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] Y.Koyama, T.Hashizume, and H.Hasegawa: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN for Field Effect Transistor Applications" Solid-State Electron.43 (in press). (1999)
  • Description: 「研究成果報告書概要(欧文)」より
• [Publications] T.Hashizume, E.Alekseev and D.Pavlidis: "Capacitance-voltage characterization of AlN/GaN MIS structures grown on sapphire substrate by MOCVD" Applied Physics Letters. 75 (in press). (1999)
  • Description: 「研究成果報告書概要(欧文)」より