1997 Fiscal Year Annual Research Report

強誘電体薄膜の諸機能の発現機構の解明と新デバイスへの展開

Research Project

Project/Area Number	09595001
Research Institution	Nagoya University
Principal Investigator	石橋善弘名古屋大学, 工学研究科, 教授 (00023052)
Co-Investigator(Kenkyū-buntansha)	川合知二大阪大学, 産業科学研究所, 教授 (20092546) 平野真一名古屋大学, 工学研究科, 教授 (30016828) 奥山雅則大阪大学, 基礎工学研究科, 教授 (60029569) 寺内暉関西学院大学, 理学部, 教授 (00079667) 安達正利富山県立大学, 工学部, 教授 (90026287)
Keywords	強誘電体薄膜 / 不揮発性メモリ / 膜疲労 / 強誘電体人工格子 / リラクサ強誘電体 / ゾルゲル法 / レーザアブレーション / MBE法
Research Abstract	本研究班は、近い将来、特定領域研究への申請をなすべく、その基となる調査・研究を目的として結成された。その目的に沿うよう、班員を中心とした研究会を名古屋市において2回開催した。第1回は、強誘電体薄膜の実用化にむけてわが国で最先端をいく民間企業数社の研究者から、研究・開発の現状をきき、かつ大学研究者が、当該課題にいかにとりくむべきか、いかなる貢献が出来るかといった問題について、討議することを目的とした。また、本課題に興味をもつ班員外大学研究者にも多数の参加をよびかけ、活発な討論を行った。この研究会では、松下電子工業関係企業では、すでに強誘電体薄膜メモリを用いた非接触型IDカードが実用化されているなどの開発例の報告がなされ、参加者に強い感銘を与えた。また、本課題を中心に研究の活性化にむけての方策について討議した。そのなかで、強誘電体薄膜の光応用についても強力な研究体制確立の必要性が指摘された。第2回目は、当研究班の調査・研究成果を報告・討議するため、班員だけを参加者として開催した。強誘電体薄膜の作成、メモリとして利用した場合の情報保持、膜疲労等の現象についての報告が多数あり、強誘電体薄膜応用上の基礎データが大学にも蓄積されつつあることがあきらかになった。なお、1997年8月にソウルで開催された第9回強誘電体国際会議は、強誘電体研究分野の最大の国際会議であり、薄膜応用に関する情報収集の最適の場であり、多数の班員が会議で研究成果を発表し、その他に各自の分担課題についての調査研究が行われた。

Research Products
(31 results)

All Other

All Publications (31 results)

[Publications] Yoshihiro Ishibashi: "A Discrete Model of the Transition between Phases with the Same Modulation Period" J.Phys.Soc.Jpn.67・1. 27-28 (1998)
[Publications] Yoshihiro Ishibashi: "Phase Diagrams in Successive Phase Transitions in BaTiO_3-Type oxides-Case of the First Order Transition from the Cubic Phase" Ferroelectrics. 203. 367-373 (1997)
[Publications] Yoshihiro Ishibashi: "A Note on the Long Period Commensurate Structures" J.Phys.Soc.Jpn.67・4(頁数未定). (1998)
[Publications] Y.Hamakawa: "An Accelerated Promotion of the New Sunshine Project and Recent Advances of PV Technology" Proceedings of ISES '97 World Solar Congress. (印刷中). 123-132 (1998)
[Publications] 浜川圭弘: "21世紀のハイテクをリ-ドするセンサ技術" 次世代センサ(巻頭言). 7. 1 (1998)
[Publications] 川合知二: "高・強誘電体人工格子" セラミックス. 32・11. 898-902 (1997)
[Publications] 川合知二: ""機能調和人口格子"による新材料へのブレークスルー" まてりあ. 36・10. 990-995 (1997)
[Publications] Naohiko Yasuda: "Effect of hydrostatic pressure in barium titanate stannate solid solution Ba (Til-xSnx) O3" ,Journal of Materials Science Letters,. 16. 1315-1318 (1997)
[Publications] Naohiko Yasuda: "Pressure-Induced Dielectric Behavior in Disordered Change from Relaxor to Antiferroelectric Pb (In1/2Nb1/2) O3" J.Phys.Soc.Jpn.66・7. 1920-1923 (1997)
[Publications] M.Shimizu: ""MOCVD of Pb-Based Ferroelectric Oxide Films"" J.Crst.Growth. 174. 464-472 (1997)
[Publications] M.Shimizu: "Step Coverage Characteristics of Pb (Zr,Ti) O3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition" Jpn.J.Appl.Phys.36. 5808-5811 (1997)
[Publications] Z.Chen (M.Adachi): "Growth of BaTiO_3 : Ce Single Crystals and Their Properties" Jpn.J.Appl.Phys.36・9B. 5943-5946 (1997)
[Publications] M.Adachi: "SAW Properties of Li_2B_4O_7 Crystals and Their Applications to Acousto-Optic Waveguide Modulation" Ferroelectrics. 195. 123-126 (1997)
[Publications] M.Iwata: "Phase Diagrams and The Nonlinear Dielectric Constant in the Landau-Type Potential Including the Linear-Quadratic Coupling between Order Parameters" J.Phys.Soc.Jpn.66・4. 1205-1209 (1997)
[Publications] M.Iwata: "Low Temperature Dielectric Dispersion in Sn_2P_2S_6" J.Phys.Soc.Jpn.67・2(印刷中). (1998)
[Publications] H.Ishiwara: "Current Status and prospects of MFSFET and related dvices" Integrated Ferroelectrics. 17. 11-20 (1997)
[Publications] 石原宏: "強誘電体ゲートFETの作製とニューロン回路への応用" 応用物理. 66・12. 1335-1340 (1997)
[Publications] T.Takenaka: "New Bismuth Layer-Structured Ferroelectrics with Niobium Ions as B-Site" Ferroelectrics. 201. 117-126 (1997)
[Publications] T.Takenaka: "Lead-Free Piezoelectric Ceramics Based on (Bi1/2Na1/2) TiO_3-NaNbO_3" Ferroelectrics. 196. 175-178 (1997)
[Publications] M.Okuyama: "Dielectric Property of Ferroelectric-Insulator-Semiconductor Junction" Appl.Surface Science. 117/118. 406-412 (1997)
[Publications] Y.Oishi (M.Okuyama): "Preparation and Basic Properties of SrBi_2Ta_2O_9 Films" Jpn.J.Appl.Phys.36. 2183-2191 (1997)
[Publications] T.Hayashi: "Preparation and Dielectric Properties of SrBi_2Ta_2O_9 Thin Films by Sol-Gel Method" Jpn.J.Appl.Phys.36. 5900-5903 (1997)
[Publications] H.Suzuki (T.Hayashi): "Low-Temperature Processing of Highly Oriented Pb (Zr_xTi_<(1-x)>) O_3 Thin Films with Multi-Seeding Layers" Jpn.J.Appl.Phys.36. 5803-5807 (1997)
[Publications] V.Shuvaeva (H.Terauchi): "Polarized XAFS Study of KNbO_3 Local Structure" J.Phys.Soc.Jpn.66. 1351-1355 (1997)
[Publications] S.Tsunekawa (H.Terauchi): "Atomic Force and Scanning Electron Microscopic of Surface and Domain Structures of BaTiO_3 Films and Bulk Crystals" Appl.Phys.Lett.71. 1486-1488 (1997)
[Publications] Y.Uesu: "Non-destructive observations of 180 degree ferroelectric domain using the nonlinear Optical (SHG) microscope" Ferroelectrics. 191. 135-140 (1997)
[Publications] Y.Masuda: "Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser" Jpn.J.Appl.Phys.36. 5834-5839 (1997)
[Publications] Y.Masuda: "Ferroelectric Properties of Ba_2NaNb_5O_<15> Films by RF Magnetron Sputtering Method" Ferroelectrics. 195. 297-304 (1997)
[Publications] S.Okamura (T.Siosaki): "Fabrication of Ferroelectric Bi_4Ti_3O_<12> Thin Films and Micropatterns by Means of Chemical Solution Decomposition and Electron Beam Irradation" Integrated Ferroelectrics. 18. 311-318 (1997)
[Publications] H.Okino (T.Siosaki): "A Study of the Defect Structures in MoCVD-Grown PbZr_xTi_<1-x>O_3 Thin Films by Thermally Stimulated Current Measurements" Integrated Ferroelectrics. 18. 63-70 (1997)
[Publications] Y.Hamakawa: "Japanese R & D Trend Analysis No.6 Material Trends in Optoelectronics" KRI (Kyoto Reserch Institute) International, 328 (1997)

1997 Fiscal Year Annual Research Report

強誘電体薄膜の諸機能の発現機構の解明と新デバイスへの展開

Principal Investigator

石橋 善弘 名古屋大学, 工学研究科, 教授 (00023052)

Research Products

[Publications] Yoshihiro Ishibashi: "A Discrete Model of the Transition between Phases with the Same Modulation Period" J.Phys.Soc.Jpn.67・1. 27-28 (1998)

[Publications] Yoshihiro Ishibashi: "Phase Diagrams in Successive Phase Transitions in BaTiO_3-Type oxides-Case of the First Order Transition from the Cubic Phase" Ferroelectrics. 203. 367-373 (1997)

[Publications] Yoshihiro Ishibashi: "A Note on the Long Period Commensurate Structures" J.Phys.Soc.Jpn.67・4(頁数未定). (1998)

[Publications] Y.Hamakawa: "An Accelerated Promotion of the New Sunshine Project and Recent Advances of PV Technology" Proceedings of ISES '97 World Solar Congress. (印刷中). 123-132 (1998)

[Publications] 浜川圭弘: "21世紀のハイテクをリ-ドするセンサ技術" 次世代センサ(巻頭言). 7. 1 (1998)

[Publications] 川合知二: "高・強誘電体人工格子" セラミックス. 32・11. 898-902 (1997)

[Publications] 川合知二: ""機能調和人口格子"による新材料へのブレークスルー" まてりあ. 36・10. 990-995 (1997)

[Publications] Naohiko Yasuda: "Effect of hydrostatic pressure in barium titanate stannate solid solution Ba (Til-xSnx) O3" ,Journal of Materials Science Letters,. 16. 1315-1318 (1997)

[Publications] Naohiko Yasuda: "Pressure-Induced Dielectric Behavior in Disordered Change from Relaxor to Antiferroelectric Pb (In1/2Nb1/2) O3" J.Phys.Soc.Jpn.66・7. 1920-1923 (1997)

[Publications] M.Shimizu: ""MOCVD of Pb-Based Ferroelectric Oxide Films"" J.Crst.Growth. 174. 464-472 (1997)

[Publications] M.Shimizu: "Step Coverage Characteristics of Pb (Zr,Ti) O3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition" Jpn.J.Appl.Phys.36. 5808-5811 (1997)

[Publications] Z.Chen (M.Adachi): "Growth of BaTiO_3 : Ce Single Crystals and Their Properties" Jpn.J.Appl.Phys.36・9B. 5943-5946 (1997)

[Publications] M.Adachi: "SAW Properties of Li_2B_4O_7 Crystals and Their Applications to Acousto-Optic Waveguide Modulation" Ferroelectrics. 195. 123-126 (1997)

[Publications] M.Iwata: "Phase Diagrams and The Nonlinear Dielectric Constant in the Landau-Type Potential Including the Linear-Quadratic Coupling between Order Parameters" J.Phys.Soc.Jpn.66・4. 1205-1209 (1997)

[Publications] M.Iwata: "Low Temperature Dielectric Dispersion in Sn_2P_2S_6" J.Phys.Soc.Jpn.67・2(印刷中). (1998)

[Publications] H.Ishiwara: "Current Status and prospects of MFSFET and related dvices" Integrated Ferroelectrics. 17. 11-20 (1997)

[Publications] 石原宏: "強誘電体ゲートFETの作製とニューロン回路への応用" 応用物理. 66・12. 1335-1340 (1997)

[Publications] T.Takenaka: "New Bismuth Layer-Structured Ferroelectrics with Niobium Ions as B-Site" Ferroelectrics. 201. 117-126 (1997)

[Publications] T.Takenaka: "Lead-Free Piezoelectric Ceramics Based on (Bi1/2Na1/2) TiO_3-NaNbO_3" Ferroelectrics. 196. 175-178 (1997)

[Publications] M.Okuyama: "Dielectric Property of Ferroelectric-Insulator-Semiconductor Junction" Appl.Surface Science. 117/118. 406-412 (1997)

[Publications] Y.Oishi (M.Okuyama): "Preparation and Basic Properties of SrBi_2Ta_2O_9 Films" Jpn.J.Appl.Phys.36. 2183-2191 (1997)

[Publications] T.Hayashi: "Preparation and Dielectric Properties of SrBi_2Ta_2O_9 Thin Films by Sol-Gel Method" Jpn.J.Appl.Phys.36. 5900-5903 (1997)

[Publications] H.Suzuki (T.Hayashi): "Low-Temperature Processing of Highly Oriented Pb (Zr_xTi_<(1-x)>) O_3 Thin Films with Multi-Seeding Layers" Jpn.J.Appl.Phys.36. 5803-5807 (1997)

[Publications] V.Shuvaeva (H.Terauchi): "Polarized XAFS Study of KNbO_3 Local Structure" J.Phys.Soc.Jpn.66. 1351-1355 (1997)

[Publications] S.Tsunekawa (H.Terauchi): "Atomic Force and Scanning Electron Microscopic of Surface and Domain Structures of BaTiO_3 Films and Bulk Crystals" Appl.Phys.Lett.71. 1486-1488 (1997)

[Publications] Y.Uesu: "Non-destructive observations of 180 degree ferroelectric domain using the nonlinear Optical (SHG) microscope" Ferroelectrics. 191. 135-140 (1997)

[Publications] Y.Masuda: "Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser" Jpn.J.Appl.Phys.36. 5834-5839 (1997)

[Publications] Y.Masuda: "Ferroelectric Properties of Ba_2NaNb_5O_<15> Films by RF Magnetron Sputtering Method" Ferroelectrics. 195. 297-304 (1997)

[Publications] S.Okamura (T.Siosaki): "Fabrication of Ferroelectric Bi_4Ti_3O_<12> Thin Films and Micropatterns by Means of Chemical Solution Decomposition and Electron Beam Irradation" Integrated Ferroelectrics. 18. 311-318 (1997)

[Publications] H.Okino (T.Siosaki): "A Study of the Defect Structures in MoCVD-Grown PbZr_xTi_<1-x>O_3 Thin Films by Thermally Stimulated Current Measurements" Integrated Ferroelectrics. 18. 63-70 (1997)

[Publications] Y.Hamakawa: "Japanese R & D Trend Analysis No.6 Material Trends in Optoelectronics" KRI (Kyoto Reserch Institute) International, 328 (1997)

石橋善弘名古屋大学, 工学研究科, 教授 (00023052)