1999 Fiscal Year Final Research Report Summary
Orientation of polysilane films under strong magnetic fields
| Project/Area Number |
09640694
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機能・物性・材料
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| Research Institution | OSAKA PREFECTURE UNIVERSITY |
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Principal Investigator |
DOHMARU Takaaki Osaka Prefecture University, Research Institute for Advanced Science and Technology, Professor, 先端科学研究所, 教授 (10100223)
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| Co-Investigator(Kenkyū-buntansha) |
MOGI Iwao Tohoku University, (Institute for Materials Research), Research Associate, 金属材料研究所, 助手 (50210084)
OKA Kunio Osaka Prefecture University, Research Institute for Advanced Science and Technology, Associate Professor, 先端科学研究所, 助教授 (50090452)
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| Project Period (FY) |
1997 – 1999
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| Keywords | polysilanes / orientation / magnetic fields / hole mobility |
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| Research Abstract |
It has been generally accepted that the carrier transport in polysilanes occurs via hopping through the σ-conjugated domains developed along Si backbones. Thus the drift mobility is expected to increase by two orders by orienting Si main chains. In this report, we attempted to orient the main chains of polysilanes under strong magnetic fields, and obtained the following results.
(1) Movement of the main chains of ten polysilanes under varying magnetic fields was monitored by UV absorption spectroscopy. We found that the main chains of some polysilanes moved toward the direction perpendicular to the magnetic field.
(2) Carrier transport properties of the polysilane samples prepared under high magnetic fields were obviously different from those of the polysilane samples prepared under no magnetic fields.
(3) Magnetic susceptibility of poly(methylphenyl)silane was measured with SQUID. Compared with the calculated values by Pascal's Additivity Rule, the measured values showed higher diamagnetic suceptibility, which, we demonstrate, is an experimental evidence for the σ-conjugation along the Si main chains.
Hole drift mobilities of some polysilanes are expected to increase, if the samples are prepared under strong magnetic field with the film surfaces parallel to the magnetic field.
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Research Products
(2 results)
