1998 Fiscal Year Final Research Report Summary
Fundamental Research on Observation and Control of Hydrogen Related Reaction in Semiconductor Surfaces
| Project/Area Number |
09650031
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | KOBE UNIVERSITY |
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Principal Investigator |
HONGO Shozo Kobe University Faculty of Engineering Associate Professor, 工学部, 助教授 (00029232)
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| Co-Investigator(Kenkyū-buntansha) |
URANO Toshio Kobe University Faculty of Engineering Associate Professor, 工学部, 助教授 (40107983)
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| Project Period (FY) |
1997 – 1998
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| Keywords | MDS / TDS / TPD / Thermal Desorption Spectroscopy / Silicon / hydrogen / Alkaline Metal / Barium |
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| Research Abstract |
The coadsorption structure and electronic state of Cs and H on Si(100)2x1 were investigated by means of MDS and TDS.The both systems of Cs/H/Si and H/Cs/Si have the same TDS profiles, which indicates that Si dangling bonds are partly terminated with H atoms in both systems and CsH formed at the Cs coverages above about 0.4 ML is dissociated into H and Cs, resulting in H_2 desorption at about 20。C.On the other hand, MDS spectra for the H / Cs / Si system differs from those for Cs / H / Si one, i.e., Cs-H bonds can be clearly seen in case of the H / Cs / Si systems, while not in case of the Cs / H / Si systems. The difference for MDS spectra between both systems can be explained as follows : in case of the Cs / H / Si systems, all hydrogen atoms including Cs-H bonds are located between Cs layer and Si substrate, while in case of the H / Cs / Si systems, some of the hydrogen atoms forming Cs-H bonds are on the outermost surface.
The mechanism of hydrogen chemisorption on Ba precovered Si(100) surface was investigated by means of MDS, TDS and work function measurement. For 1ML Ba/Si(100), incident hydrogen atoms adsorb on top of Ba atoms from the initial stage of hydrogen exposure. On the other hand, for 4ML Ba/Si(100), hydrogen atoms diffuse into the Ba overlayers in the early stage of hydrogen exposure. Finally, all Ba atoms for both systems turn into BaH_2. The bond of Ba-H formed on 4ML Ba/Si(100) is stronger than that formed on 1ML Ba/Si(100).
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