1998 Fiscal Year Final Research Report Summary
Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its Mechanisms
| Project/Area Number |
09650349
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa University |
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Principal Investigator |
HATA Tomonobu Kanazawa University, Faculty of Engineering, Professor, 工学部, 教授 (50019767)
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| Project Period (FY) |
1997 – 1998
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| Keywords | Sputtering / PZT Thin Films / Metallic Mode / Oxide Mode / Isotope Oxygen / ZrTi Target / Metal-Oxide Combined Target |
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| Research Abstract |
Origin of oxygens in PZT (Pb(Zr, Ti)O_3) films prepared using isotope oxygen (18O_2) was investigated by analyzing the mass of oxygens in the films by SIMS technique. For a film prepared by metallic mode it was found for the first time that 90% oxygen in the film was from PbO and the rest 10% from oxygen gas. Thus PbO is the main oxygen source. While, for oxide mode 30% oxygen came from PbO, consequently, oxygen gas was the main oxygen source.
Quantitatively investigating Pb ratio to Zr+Ti in targets, it was found that perovskite films were intended to grow when the ratio was more than 3. This result is recognized that perovskite films grew when oxygen was supplied so as to just satisfy the stoichiometry of PZT.PbO is not necessary to just supplement its deficiency due to high volatility of Pb. This is a novel view point.
Finally based on results a design method for target of quasi-metallic mode sputter deposition is proposed.
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