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1998 Fiscal Year Final Research Report Summary

Electrical and optical properties in rare earth-doped amorphous chalcogenides

Research Project

Project/Area Number 09650352
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionGifu University

Principal Investigator

SHIMAKAWA Koichi  Gifu University, Department of Electrical And Electronic Engineering Professor, 工学部, 教授 (60021614)

Project Period (FY) 1997 – 1998
KeywordsSolid state laser / fiber amplifier / chalcogenide glasses / rare earth-doped glasses / l / f noise / photoluminescence / photostructural change / nonradiative transition
Research Abstract

Chalcogenide glasses are currently being investigated as host media for rare earthdoped photonic devices such as fiber amplifiers or fiber lasers. Due to low phonon energies, high rfractive index, and higher transparency in the near infrared, chalcogenide glasses are very attractive and have a potential for such devices.
In the present study, the thin films of rare earth- doped chalcogenides (As2Se3) were tried to prepare by a sputtering method. The electrical and optical properties have been studied for both with and without rare earth (Pr) component. In general, chalcogenide glasses show various photoinduced effects such as defect creation and volume changes and hence these basic properties were systematically studied. To know nonradiative transition from chalcogenide to rare earth ions (energy transfer mechanisms are unknown), a noise measurements were undertaken. This is the first time in the world. The measurement system was established and the useful results will be obtained soon. The photoluminescence from rare earth ions were observed. The signal is however very weak at present. This means the sample is still not qualified.
My next target is 1) To prepare good samples, the best condition for sputtering should be looked for. 2) The theory for noise (1/f) should be developed for nonradiative transition. The works are going on along this purpose.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] K.Shimakawa: "A model for the photostructural changes in amorphons chalcogenides"Philosophical Magazine Letters. 77. 153-158 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Kuzukawa: "Photoinduced structural changes in obl*quely deposited arsenic-based amorphous chalcogenides"Philosophical Magazine B. 19. 249-256 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Aoki: "Reversible photoinduced changes of electronic transport in narrow-gap amorphons Sb2Se3"Physical Review B. 59. 1579-1581 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Garzoo: "In situ photoexpansion measurements of Aszs* films:Role of photocarriers"Applied Physics Letters. 74. 2119-2121 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Shimakawa, N. Yoshida, A. Ganjoo, Y. Kuzukawa, and J. Singh: "A model for the photostructural changes in amorphous chalcogenides"Philosophical Magazine Letters. 77. 153-158 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Kuzukawa, A. Ganjoo, K. Shimakawa, Y. Ikeda: "Photoinduced structural changes in obliquely deposited arsenic-based amorphous chalcogenides : a model for photostructural changes"Philosophical Magazine B. 79. 249-256 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Aoki, H. Shimada, N. Hirao, N. Yoshida, K. Shimakawa, S.R. Elliott: "Reversible photoinduced changes of electronic transport in narrow-gap amorphous SbィイD22ィエD2SeィイD23ィエD2"Physical Review B. 59. 1579-1581 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ganjoo, N. Yoshida, and K. Shimakawa: "Photoinduced changes on the structural and electronic properties of amorphous semiconductors"(Invited review paper), Recent Research Development of Applied Physics. 2. 129-150 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ganjoo, Y. Ikeda, K. Shimakawa: "In situ photoexpansion measurements of amorphous AsィイD22ィエD2SィイD23ィエD2 films : Role of photocarriers"Applied Physics Letters. 74. 2119-2121 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Shimakawa, N. Yoshida, and A. Ganjoo: "Current topics of photoinduced metastabilities in amorphous semiconductors (Invited review paper)"World Scientific. (in printing). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Senda, N. Yoshida, and K. Shimakawa: "Kinetics of photoinduced defect creation in amorphous semiconductors : analogy to a logistic equation in a biological system"Philosophical Magazine Letters. (in printing). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Ganjoo, K. Shimakawa, N. Yoshida, T. Ohno, A. Kolobov, and Y. Ikeda: "Photoinduced changes of ac transport in AsィイD22ィエD2SeィイD23ィエD2 films : Role of defects and band this"Physical Review B. (in printing). (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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