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1998 Fiscal Year Final Research Report Summary

Crystal growth of GaAsN alloy using ECR plasma and basic investigation for realizing OEIC

Research Project

Project/Area Number 09650372
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka Institute of Technology

Principal Investigator

YODO Tokuo  Osaka Institute of Technology, Faculty of Engineering, Associated Professor, 工学部, 助教授 (70288752)

Project Period (FY) 1997 – 1998
KeywordsOEIC / ECR plasma / epitaxial growth / galium arsenide on silicon / galium nitride / nitride semiconductor / GaAsN alloy / lattice matching
Research Abstract

In this research, we tried to grow epitaxial films of GaAs_<1-x>xN_x alloy on nominal Si(001) substrates using ECR-MBE method. The alloy composition (x) of GaAs_<1-x>xN_x on Si with lattice matching is estimated to be about 20 %. The GaAs_<1-x>xN_x alloy with alloy composition of 15 % did not separate GaAs and GaN phases and form uniform alloy, but the crystalline quality of GaAs_<1-x>xN_x alloy was very bad. The GaAs_<1-x>xN_x alloy with alloy compositions of more than 15% separated GaAs and GaN phases because of miscibility gap. Moreover, the crystalline quality of the alloy was greatly degraded despite of close lattice matching with Si. The crystalline quality of the films begins to be degraded from about 5 % by increasing the alloy composition, probably because of mixture of zincblende GaAs_<1-x>xN_x alloy and hexagonal GaAs_<1-x>xN_x in GaAs_<1-x>xN_x alloy.

  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] T.Yodo: "Anisotropic Strain Estimated from Lattice Paramenters Measured by Bond Method Using X-Ray Diffration, in Molecular Beam Epitaxy-grown GaAs/Si(001)" Japanese Journal of Applied Physics. 37巻・2号. P.450-454 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yodo: "Effect of Substrate Orientation on Lattice Parameters and Strains in GaAs Heteroepitaxial Films on Si Substrates" 16th Electric Materials Symposium Record. P.125-126 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yodo: "Strained crystal structre of GaAs supposed considering anisotropic residual stress in GaAs films on vicinal Si(100) and Si(110) substrates" 17th Electric Materials Symposium Record. P.29-32 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yodo: ""Anisotropic Strain Estimated from Lattice Parameters Measured by Bond Method Using X-Ray Diffraction in Molecular Beam Epitaxy-grown GaAs/Si (001)"" Jpn.J.Appl.Phys.Vol.37, No.2. 450-454 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yodo: ""Effect of Substrate Orientation on Lattice Parameters and Strains in GaAs Heteroepitaxial Films on Si Substrates"" 16th Electric Materials Symposium Record. 125-126 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yodo: ""Strained crystal structure of GaAs supposed considering anisotropic residual stress in GaAs films on vicinal Si(001) and Si(110) substrates"" 17th Electric Materials Symposium Record. 29-32 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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