1998 Fiscal Year Annual Research Report

分子線エピタキシー選択成長による量子ネットワークの自己組織的形成に関する研究

Research Project

Project/Area Number	09750336
Research Institution	Hokkaido University
Principal Investigator	藤倉序章北海道大学, 大学院・工学研究科, 助教授 (70271640)
Keywords	量子細線 / 量子ドット / 量子ネットワーク / 分子線エピタキシー選択成長法 / InP系InGaAs / InAlAs / 単電子デバイス
Research Abstract	本研究は、加工基板上へ結晶成長法を行う際に発現する、線状(量子細線)あるいは点状(量子ドット)のキャリアじ込め構造が自己組織的に形成される現象を利用して、高密度量子ドットが量子細線により相互に結合された量子ネットワークを形成することを目的とする。本研究で得られた成果の概略を以下に記す。 (1)InP基板表面に正方形のメサ(台地状の構造)と線状のメサが相互に結合した構造をリソグラフィー・エッチングにより形成し、この上に分子線エピタキシ(MBE)法によりInAlAs/InGaAs/InAlAs構造の成長を行った。構造観察の結果、適切な成長条件下で、正方形メサ上にInGaAs量子ドットが、線状メサ上にInGaAs量子細線が形成され、InGaAs量子細線と量子ドットの結合構造が実現されることが明らかとなった。 (2)上記のInGaAs量子細線と量子ドットの間には、細いInGaAs量子細線が形成されており、これがポテンシャル障壁として働き、細線-障壁-ドット-障壁-細線という2重障壁ポテンシャルプロファイルが実現されていることを明らかにした。 (3)また、初期加工基板形状・成長条件等を様々に変えて形成した細線-ドット結合構造の構造観察から、ドット・細線・ポテンシャル障壁の細部・細線サイズ・ポテンシャル障壁幅の最小値としてそれぞれ100nm,30nm,80nmを実現している。以上の成果は、本研究で開発した加工基板上へのMBE選択成長法による量子細線-量子ドット結合構造形成手法が、精密かつ複雑なポテンシャルプロファイル制御を必要とする量子デバイスネットワーク・単電子デバイスネットワーク形成のための有望な手段となりうることを示している。

Research Products

(15 results)

All Other

All Publications (15 results)

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261-266 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532-1539 (1998)
[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413-1417 (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419-1423 (1998)
[Publications] Y.Sato: "Voltage Gain in GaAsーBased Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38. 410-414 (1999)
[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38. 421-424 (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38. in press (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38. in press (1999)
[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Films. 336. 22-25 (1998)
[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
[Publications] N.Ono: "Study of Selective MBE Growth on Patterned(001)InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)
[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electron. (in press). (1999)
[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Sai: "H.Sai,H.Fujikura and H.Hasegawa:“Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

1998 Fiscal Year Annual Research Report

分子線エピタキシー選択成長による量子ネットワークの自己組織的形成に関する研究

Principal Investigator

藤倉 序章 北海道大学, 大学院・工学研究科, 助教授 (70271640)

Research Products

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261-266 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532-1539 (1998)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413-1417 (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419-1423 (1998)

[Publications] Y.Sato: "Voltage Gain in GaAsーBased Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38. 410-414 (1999)

[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38. 421-424 (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38. in press (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38. in press (1999)

[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Films. 336. 22-25 (1998)

[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)

[Publications] N.Ono: "Study of Selective MBE Growth on Patterned(001)InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)

[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electron. (in press). (1999)

[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Sai: "H.Sai,H.Fujikura and H.Hasegawa:“Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

藤倉序章北海道大学, 大学院・工学研究科, 助教授 (70271640)