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1999 Fiscal Year Final Research Report Summary

Inter-dot interaction and photo-conductivity in quantum dot ensemble.

Research Project

Project/Area Number 09831004
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 極微細構造工学
Research InstitutionKonan University

Principal Investigator

SUGIMURA Akira  Konan University, Faculty of Science, Professor, 理学部, 教授 (30278791)

Co-Investigator(Kenkyū-buntansha) パブロ バッカロ  ATR環境適応通信研究所, 研究員
FUJITA Kazuhisa  ATR Adaptive Communication Research Labs., Senior Researcher, 主任研究員
UMEZU Ikuro  Konan University, Faculty of Science, Asociate Professor, 理学部, 助教授 (30203582)
VACCARO Publo o  ATR Adaptive Communication Research Labs., Researcher
Project Period (FY) 1997 – 1999
Keywordsquantum dot / inter-dot interaction / coupling / photo-conductivity / photoluminescence / strong correlation / InGaAs / dot density
Research Abstract

InAs/GaAs quantum dot ensembles with different dot densities were prepared self-consistently using Stranski-Krastanov growth mode. Photoluminescence spectrum measured at 12K showed asymmetric shape indicating longer tail at lower energy side when the dot density was high enough. We measured the dot size distribution by using atomic force microscope. Although the size of each dot is not uniform, inhomogeneous broadening of the quantum levels due to this size distribution is found to be unable to explain the experimentally observed asymmetric spectrum. We theoretically showed that the quantum states of the three-dot system are split into asymmetric levels, one bonding state and two anti-bonding states, when the inter-dot coupling is introduced. Based on this idea, we numerically calculated the coupled electronic states of the randomly distributed many dot system by directly diagonalizing the coupled wave equations. Since the result showed asymmetric shape with longer tail at lower energy side, the experimentally observed asymmetric spectrum can be attributed to the inter-dot coupling. In addition, we investigated the photo-conductive properties of the samples. We observed nonlinear current-voltage characteristics with a peak in differential registance when the dot density is high enough. The peak position moves as the illuminated light intensity is changed. These experimental results suggest that the nonlinear electron transport is caused by the Coulomb repulsion of the two electrons sited on a quantum dot.

  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] J. Sakai and A. Sugimura: "Temporal propagation of electron wave in a periodic structure with finite length"Jpn J. Appl. Phys.. 36. 5382-5392 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Umezu et al.: "Temperature dependent photoluminescence of silicon nano crystallites prepared by ambient pulsed laser ablation"Material Research Society Symposium Prdeedings. 486. 219-223 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sugimura et al.: "Structure parameters for electron spin ordering in InGaAs/GaAs coupled quantum dot systems"Abstract of Material Research Society Meeting. -. 85-86 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sugimura et al.: "In-plane electronic coupling in self-organized quantum dot ensemble"Proc. 24th International Conf. Physics of Semiconductors. (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Umezu et al.: "Efficient photoluminescence from a-Si : H film prepared by reactive RF sputtering"Proc. 24th International Conf. Physics of Semiconductors. (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P. O. Vaccaro et al.: "Nane-oxidation of vanadium thin film using atomic force microscope"Journal of Material Science Letters. 17. 1941-1943 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Umezu et al.: "A Comparative study of the photoluminescence properties of a-SiO_2 : H film and silicon nano crystallites"Journal of Non-Crystalline Solids. 印刷中. (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Umezu et al.: "Effects of thermal processing on photoluminescence of Si nano crystallites prepared by pulsed laser ablation"Proc. 5th Int. Symp. Quantum Confinement Names true turis. 98-19. 40-48 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I. Umezu et al.: "Effects of thermal processes on photoluminescence of Si nano crystallites prepared by pulsed laser ablation"J. Appl. Phys.. 84. 6448-6450 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 只政逸志 他: "POS法を用いた薄膜中の欠陥の深さ方向分布測定法"論文集 光物性研究会'97. -. 161-164 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J. Sakai and A. sugimura: ""Temporal propagation of electron wave in a periodic structure with finite length""Jpn. J. Appl Phys.. vol.36. 5382-5392 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I. Umezu et al.: ""Temperature dependent photoluminescence of silicon monocrystallites prepared by ambient pulsed laser ablation""Material Research Society Symposium Proceedings. 486. 219-223 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A Sugimura et al.: ""Structure parameters for electron spin ordering in InGaAs/GaAs coupled quantum dot systems""Abstract of Material Research Society Meeting. 85-86 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A Sugimura et al.: ""In-plane electronic Coupling in self-organized quantum dot ensemble""Proc. 24th Int. Conf. Physics of Semiconductors. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I Umezu et al.: ""Efficient photoluminescence from u-Si : H film prepared by reactive RF sputtering""Proc. 24th Int. Conf. Physics of Semiconductors. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P. O. Vaccaro et al.: ""Nanooxydation of vanadium thin film using atomic force microscope""J. Material Science Letters. vol.17. 1941-1943 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I Umezu et al.: ""A comparative study of the photoluminescence properties of a SiOx : H film and silicon monocrystals""J Noncrystalline Solids. (to be published). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I Umezu et al.: ""Effects of thermal processing on photoluminescence of Si monocrystallites prepared by pulsed laser ablation""Proc. 5th Int. Symp. Quantum Confinement Nanostructures. vol.98-19. 40-48 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I. Umezu et al.: ""Effects of thermal processes on photoluminescence of Si monocrystallites prepared by pulsed laser ablation""J. Appl. Phys.. vol.84. 6448-6450 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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