超薄膜超微細構造デバイスに関する研究

1998 Fiscal Year Annual Research Report

• Project/Area Number: 10044138
• Research Category: Grant-in-Aid for international Scientific Research
• Section: Joint Research .
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 小田 俊理 東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)
• Co-Investigator(Kenkyū-buntansha): KASTNER Marc マサチューセッツ工科大学, 教授 ; MILNE Willia ケンブリッジ大学, 工学部, 教授 ; MOORE David ケンブリッジ大学, 工学部, 助教授 ; 杉浦 修 東京工業大学, 工学部, 助教授 (10187643) ; 松村 正清 東京工業大学, 工学部, 教授 (30110729)
• Keywords: 超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス / 原子層エピタキシー / 薄膜トランジスタ

Research Abstract

1. プラズマ分解法により粒径10ナノメートル以下のシリコン量子ドットを作製した。アルゴンプラズマ中にシランガスパルスを導入する方法により従来より2桁堆積速度を増加させることに成功した。
2. 電子ビーム露光法とECR反応性エッチング法により、SOI基板上に微細シリコン電極を形成した。微細電極間に堆積したシリコン量子ドットの電気特性を測定し、クーロンブロッケイド、クーロン振動などの単電子トンネル現象を観測した。単電子輸送の理論研究も行った。
3. 原子層MOCVD法により酸化物超伝導超薄膜を形成し、種々の絶縁性酸化物とのヘテロ接合を形成した。超音波式原料モニターと分光エリプソメトリによるその場観察法を開発して再現性ある超薄膜形成を可能にした。
4. 直接遷移や高電子移動度が期待されているSi/Ge原子層超格子の実現を目指して、SiとGeの原子層エピタキシーについて理論・実験両面から検討を加えた。Siについては、特に原料であるジクロロシラン(SiH2C12)の気相における予備的熱分解の制御が重要であって、原料滞留時間に最適値があることを明らかにした。Geでは原子状水素による表面被覆メチル基の除去機構が重要であることを明らかにした。さらに、Ge表面上へSiをヘテロ原子層成長すれば、原子寸法で組成が変化することを確認した。
5. 東京およびベルリンで国際シンポジウムを開催し、超微細構造デバイス研究の進め方について討論を行った。

Research Products

• [Publications] M.Otobe,H.Yajima and S.Oda: "Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letters. 72. 1089-1091 (1998)
• [Publications] S.Suzuki,H.Tobisaka and S.Oda: "Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices" Japanese Journal of Applied Physics. 37. 492-495 (1998)
• [Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37. 942-947 (1998)
• [Publications] S.Suzuki,S.Sugai and S.Oda: "Electric Field-effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step Edge Junctions" Japanese Journal of Applied Physics. 37. L784-L786 (1998)
• [Publications] S.Oda: "Preparation of silicon nanostructures by plasma CVD and EB processes" FED-PDI Joint Conference on 21st Century Electron Devices. II-1 (1998)
• [Publications] A.Dutta et al: "Fabrication of Nanodevices Using Silicon Quantum Dots" International Symposium on Formation,Physics and Device Application of Quantum Dot Structures. 8-9 (1998)
• [Publications] S.Oda: "Single electron tunneling in nanocrystalline silicon prepared by plasma processes" Sweden-Japanese Workshop. 3-5 (1998)
• [Publications] S.Oda and A.Dutta: "Single electron devices based on nanocrystalline silicon" International Workshop on Advanced LSIs-Scaled Device/Process and High Performance Circuits-. 107-112 (1998)
• [Publications] S.Oda et al: "Single-Electron Tunneling in Nanocrystalline Silicon" Solid State Devices and Materials Conference,Extended Abstracts. 66-67 (1998)
• [Publications] K.Usami et al: "Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate" Japanese Journal of Applied Physics. 37. L97-L99 (1998)
• [Publications] M.Matsumura: "Application of Excimer-Laser Annealing to Amorphous,Poly-Crystal and Single-Crystal Silicon Thin-Film Transistors" Phys.Stat.Sol.(a). 715. 166-174 (1998)
• [Publications] K.Ikeda et al: "Formation of Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. 37. 1311-1315 (1998)
• [Publications] E.Hasunuma et al: "Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Technology. A16. 679-684 (1998)
• [Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transaction of Electron Devices. 45. 401-405 (1998)
• [Publications] K.Usami,K.Sumimura and M.Matsumura: "Preparation of Organic Silica Films with Low Dielectric Constant from the Liquid Phase" Japanese Journal of Applied Physics. 37. L420-L422 (1998)
• [Publications] C.H.Oh,M.Ozawa and M.Matsumura: "A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films" Japanese Journal of Applied Physics. 37. L492-L495 (1998)
• [Publications] K.Ishikawa et al: "Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films" Japanese Journal of Applied Physics. 37. 731-736 (1998)
• [Publications] S.Sugahara,K.Hosaka and M.Matsumura: "Hydrogen-Induced Abstraction Mechanism of Surface Methyl Groups in Atomic-Layer-Epitaxy of Germanium" Appl.Surf.Scie.130-132. 327-333 (1998)
• [Publications] K.Yamaguchhi et al: "Atomic-Layer Chemical-Vapor-Deposition of Silicon Dioxide Films with an Extremely Low Hydrogen Content" Appl.Surf.Scie.130-132. 202-207 (1998)
• [Publications] C.H.Oh and M.Matsumura: "Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing" Japanese Journal of Applied Physics. 37. 5474-5479 (1998)
• [Publications] M.Matsumura and C.H.Oh: "Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices" Thin Solid Films. 333. 1-6 (1998)
• [Publications] K.Usami et al: "Liquid-Phase Deposition of Low-K Organic Silicon-Oxide Films" Mat.Res.Soc.Symp.Proc.511. 27-32 (1998)
• [Publications] W.C.Yeh and M.Matsumura: "Low-Temperature Sputter-Deposition of Poly-Crystal Silicon Thin-Films" Mat.Res.Soc.Symp.Proc.485. 73-77 (1998)
• [Publications] Y.Uchida et al: "Chemical-Vapor Deposition of OH-free and Low-k Organic-Silica Films" Japanese Journal of Applied Physics. 37. 6369-6373 (1998)
• [Publications] I.Idris and O.Sugiura: "Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen" Japanese Journal of Applied Physics. 37. 6562-6568 (1998)
• [Publications] A.J.Flewitt et al: "In-situ scanning tunnelling microscopy of hydrogenated amorphous silicon and microcrystalline silicon" Applied Physics A. 66. S1101-S1105 (1998)
• [Publications] K.Gilkes et al: "Direct observation of sp3 bonding in ta-C by UV Raman" Journal of Non-Cryst.Solids. 227. 612 (1998)
• [Publications] B.Kleinsorge et al: "Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C:B)" Diamond and Related Materials. 7. 472-476 (1998)
• [Publications] J.Robertson and W.I.Milne: "Band models of electron emission from diamond and diamond-like carbon" Journal of Non-Cryst.Solids. 227. 558 (1998)
• [Publications] B.S.Satyanarayana et al: "Field emission from ta-C" Diamond Related Materials. 7,2-5. 656-9 (1998)
• [Publications] F.Udrea et al: "The 3D Resurf-A revolutionary device concept for HVIC's" Electronics Letters. 34,no8. 808 (1998)
• [Publications] B.Kleinsorge et al: "Electronic and Optical Properties of Boronated Ta-C" Diamond and Related Materials. 7,No2-5. 472 (1998)
• [Publications] N.Conway et al: "Electronic Properties and Doping of taC:H" Diamond and Related materials. 7,No2-5. 477 (1998)
• [Publications] Y.Z.Xu et al: "Turn on Characteristics of Polycrystalline Silicon TFTs-Impact of Hydrogenation and Channel Length" IEEE Electron Device letters. (to be published). (1999)
• [Publications] Kastner,M.A.et al: "Magnetic,Transport,and Optical Properties of Monolayer Copper Oxides" Reviews of Modern Physics. 70. 897 (1998)
• [Publications] J.H.Daniel,D.F.Moore and J.F.Walker: "Focused ion beams for microfabrication." Engineering Science and Education Journal. 53-56 (1998)
• [Publications] J.H.Daniel et al: "Silicon microchambers for DNA amplification" Sensors and Actuators. A71. 81-88 (1998)
• [Publications] R.M.Bostock et al: "Silicon nitride microclips for the kinematic location of optic fibres in silicon V-shaped grooves" Journal Micromechanics Microengineering. 8. 343-360 (1998)
• [Publications] D.F.Moore,K.H.Ploog and S.Oda: "FED-PDI joint conference on 21st century electron devices." FED Journal. 9. 48-49 (1998)
• [Publications] S.Oda et al: "High-Temperature Superconductors and Novel Inorganic Materials,NATO ASI Series 3 vol.62 (eds.by G.Van Tendeloo,E.V.Antipov and S.N.Putilin,Kluwer Academic,Dordorecht)" Atomic Layer MOCVD of Oxide Superconductors and Dielectrics, 75-78 (1999)