1999 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Research Project

Project/Area Number	10044138
Research Institution	Tokyo Institute of Technology
Principal Investigator	小田俊理東京工業大学, 量子効果トロニクス研究センター, 教授 (50126314)
Co-Investigator(Kenkyū-buntansha)	杉浦修東京工業大学, 量子効果トロニクス研究センター, 助教授 (10187643) 松村正清東京工業大学, 工学部, 教授 (30110729)
Keywords	超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス / 原子層エピタキシー / 薄膜トランジスタ
Research Abstract	1.プラズマプロセスで形成した粒経8nmのナノ結晶シリコンを間隔15nmの微細単電子トランジスタおよびラップゲート縦型トランジスタと組み合わせて、単一シリコン量子ドットの電子輸送特性を明らかにした。またシリコンバリスティック伝導を5Kで観測した。 2.シリコンおよびゲルマニューム基板上にシリコン超薄膜、ゲルマニューム超薄膜の原子層エピタキシー成長をおこなう条件を明確にした。種々の原料分子の熱解離および吸着特性を調べて、自己停止機構の存在する単原子層成長ウィンドウの範囲を明らかにした。さらに超格子構造の作製も行った。 3.インジウムアンチモン超高速電解効果トランジスタの作製に必要なソースドレイン部分のドーピング法としてイオウ不純物を表面吸着させ、光アニールする新しい方法を開発した。 4.イオン注入法により酸化物超伝導ジョセフソン接合を提案した。また、収束イオンビームを用いてシリコンを微細加工し振動型超微細共振器を開発した。さらに、窒化シリコン微細クリップによる光ファイバ接続コネクタを製作した。 5.ダイヤモンド薄膜の構造、電気特性、光学特性を調べた。電界放出特性を利用した表示素子の試作や走査プローブ顕微鏡を用いたナノ加工の可能性を明らかにした。

Research Products
(66 results)

All Other

All Publications (66 results)

[Publications] S.Oda,D.F.Moore and W.I.Milne: "The nanostruturing of materials for device and sensor applications"Engineering Science and Education Journal. (in press). (2000)
[Publications] K.Nishiguchi and S.Oda: "Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate"Applied Physics Letters. (in press). (2000)
[Publications] A.Dutta,and S.P.Lee,S.Hatatani and S.Oda: "Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electorn Beam Direct Writing"Applied Physics Letters. 75. 1422-1424 (2000)
[Publications] A.Dutta,S.P.Lee,Y.Hayafune,S.Hatatani and S.Oda: "Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process"Japanese Journal of Applied Physics. (in press). (2000)
[Publications] A.Dutta,S.P.Lee,Y.Hayafune and S.Oda: "A Novel Technique of Electron-Beam Direct-Writing for Fabrication of Nano-Devices"Japanese Journal of Applied Physics. (in press). (2000)
[Publications] S.Yamamoto,K.Nagata,S.Sugai,A.Sengoku,Y.Matsukawa,T.Hattori and S.Oda: "Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa2Cu3Ox Thinfilms Using Ultrasonic Gas Concentration Analyzer"Japanese Journal of Applied Physics. 38. 4727-4732 (1999)
[Publications] Z.Wang,T.Yasuda,S.Hatatani and S.Oda: "Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition"Japanese Journal of Applied Physics. 38. 6817-6820 (1999)
[Publications] S.Yamamoto,S.Sugai,Y.Matsukawa,A.Sengoku,H.TobisakaT.Hattori and S.Oda: "In situ growth monitoring during metalorganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometory"Japanese Journal of Applied Physics. 38. L632-L635 (1999)
[Publications] S.Yamamoto,S.Sugai and S.Oda: "In situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms"Journal de Physique IV. 9. Pr8-1013-1020 (1999)
[Publications] Y.Fu,A.Dutta,M.Willander and S.Oda: "Electron wave interaction and carrier transport in Si-nanocrystal-based transistor"Journal of Applied Physics. (in press). (2000)
[Publications] K.Nishiguchi,S.Hara,T.Amano,S.Hatatani and S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates"Materials Research Society Symposium Proceedings. (in press). (2000)
[Publications] D.F.Moore,W.I.Milne and S.Oda: "Nanostructured materials and devices for sensor and electronic applications"Power Engineering Journal. 13. 89-93 (1999)
[Publications] F.Yun,B.J.Hinds,S.Hatatani,S.Oda,Q.X.Zhao and M.Willander: "Study of Structual and Optical Properties of Nanocrystalline Silicon Embedded in SIO2"Thin Solid Films. (in press). (2000)
[Publications] Y.Fu,M.Willander.A.Dutta and S.Oda: "Electron conduction through Si-Nanocrystal-based single electron transistor at zero gate bias"Journal of Applied Physics. (in press). (2000)
[Publications] A.Dutta,S.Oda,Y.Fu and M.Willander: "Electron Transport in Nanocrystalline-Si Based single Electron Transistors"Japanese Journal of Applied Physics. (in press). (2000)
[Publications] B.J.Hinds,K.Nishiguchi,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device"Japanese Journal of Applied Physics. (in press). (2000)
[Publications] K.Ikeda,Y.Satoh,S.Sugahara and M.Matusmura: "Characterization of Silicon Atomic Layer Epitaxy by an Atomic Force Microscope"Electronic Material Conf.. (in press). (2000)
[Publications] Y.Uchida,K.Taguchi and M.Matsumura: "Improved Hydrogen Free Chemical Vapor Deposition of Silicon Oxide"J. Non-Crystalline Solids. 254. 011-016 (1999)
[Publications] M.Ozawa.C.H Oh and M.Matsumura: "Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin-Flms on Glassy Substrate"Japanese Journal of Applied Physics. 38(10). (1999)
[Publications] K.Usami,S.Sugahara,M.Kobayashi,K.Sumumura,T.Hattori and M.Matsumura: "Praparation and Charaterization of Silica Films with Higher-Alkyl Groups"J. Non-Crystalline Solids. 260. 199-207 (1999)
[Publications] Y.Uchida,K.Taguchi,S.Sugahara and M.Matsumura: "A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant"Japanese Journal of Applied Physics. 38(4B). 2368-2372 (1999)
[Publications] S.Sugahara,K.Usami and M.Matsumura: "A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application"Japanese Journal of Applied Physics. 38(3). 1428-1432 (1999)
[Publications] W.C.Yeh and M.Matsumura: "Preparation of Giant-Grain Seed Layer for Poly-Silicon Thin-Film Solar Cells"Japanese Journal of Applied Physics. 38(2A). L110-L112 (1999)
[Publications] M.Matsumura and C.H.Oh: "Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices"Thin Solid Films. 337. 123-128 (1999)
[Publications] M.Matsuyama,S.Sugahara,K.Ikeda,Y.Uchida and M.Matsumura: "Hetero Atomic-Layer Epitaxy of Ge on Si(100)"Japanese Journal of Applied Physics. 38. (1999)
[Publications] K.Ikeda,J.Yanase,S.Sugahara and M.Matsumura: "Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy"Materials Research Society Symposium Proceedings. (in press). (2000)
[Publications] J.H.Daniel and D.F.Moore: "A microaccelerometer structure fabricated in silicon-on-insulator using a focused ion beam process"Sensors and Actuators. A73. 201-209 (1999)
[Publications] R.R.A.Syms and D.F.Moore: "Focused ion beam tuning of in-plane vibrating micromechanical resonators"Electronics Letters. 35. 1277-1278 (1999)
[Publications] W.E.Booji,C.A.Elwell,E.J.Tarte,P.F.McBrien,F.Kahlmann,D.F.Moore,M.G.Blamire,N.H.Peng and C.Jeynes: "Electrical properties of electron and ion beam irradiated YBaCuO"IEEE Transactions Applied Superconductivity. 9. 2886 6 (1999)
[Publications] B.K.Tay,X.Shi,E.J.Liu,H.S.Tan,L.K.Cheah and W.I.Milne: "Heat tratment of tetrahedral amorphous carbon films grown by filtered cathodic vacuum-arc technique"Diamond and Related Materials. 8(7). 1328-1332 (1999)
[Publications] B.S.Satyanarayana,J.Robertson and W.I.Milne: "Low Threshold field Emission from Nanoclustered carbon Grown by Cathodic Arc"Journal of Applied Physics. (in press). (2000)
[Publications] A.Ilie,J.Robertson,N.Conway,B.Kleinsorge and W.I.Milne: "Photoconductivity and Recombination in DLC"Carbon. 37. 829-833 (1999)
[Publications] N.Tomozeiu and W.I.Milne: "Magnetic Dipole Confinement Used in a-C: H Film Deposition"J. Non Xtalline Solids. 249. 180-188 (1999)
[Publications] A.Ilie,J.Robertson,N.J.Conway,B.Kleinsorge and W.I.Milne: "Photoconductivity and recombination in diamond-like carbon"Diamond and Related Materials. 8(2-5). 549-553 (1999)
[Publications] A.Hart,B.S.Satyanarayana,W.I.Milne and J.Robertson: "Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material"Applied Physics Letters. 74(11). 1594 (1999)
[Publications] A.C.Ferrari,B.S.Satyanrayanan,J.Robertson and W.I.Milne,E.Barborini,P.Piseri and P.Milani: "Field Emission from Nanoclustered Carbon Films"EuroPhys Letts,. 46. 245 et seq (1999)
[Publications] K.Palinginis,Y.Lubianker,J.D.Cohen,A.Ilie,B.Kleinsorge and W.I.Milne: "Defect Densities in ta-C films via Junction Capacitance techiniques"Applied Physics Letters. 74(3). 371 (1999)
[Publications] N.Tomozeiu,A.Hart,B.Kleinsorge and W.I.Milne: "Optical and Electrical Properties of a-C: H Deposited by Mag.Confined r.f.PECVD"Diamond and Related Materials. 8. 522 (1999)
[Publications] C.Arena,B.Kleinsorge,J.Robertson,W.I.Milne and M.E.Welland: "Electronic and topographic structure of ta-C, ta-C: N and ta-C: B investigated by scanning tunnelling microscopy"Diamond and Related Materials. 8(2-5). 435-439 (1999)
[Publications] N.Morrison,S.Rodil,J.Robertson and W.I.Milne: "High Rate Deposition of ta-C: H Using ECWR"Thin Solid Films. 337(1-2). 70 (1999)
[Publications] A.Flewitt,J.Robertson and W.I.Milne: "The Growth Mechanism of a-Si: H Determined by in -situ STM"Jounal of Applied Physics. 85(12). 8032 (1999)
[Publications] A.Flewitto,W.I.Milne and J.Robertson: "Experimental Evidence for an Inhomogernous Surface Dangling Bond Limited Growth Mechanism for a-Si: H"J. Non-Xtalline Solids. (in press). (2000)
[Publications] Xu YZ.,Clough FJ.,Narayanan EMS.,Chen Y.,Milne WI.: "Turn-on characteristics of polycrystalline silicon TFT's-Impact of hydrogenation and channel lengh"IEEE El. Dev Letts. 20(2). 80-82 (1999)
[Publications] S.Uchikoga,D.Lai,J.Robertson,W.I.Milne,N.Hatzopolous,R.A.Yankov and M.Weiler: "Low Temperature Anodic Oxidation of silicon Using a Wave Resonance Plasma source"Applied Physics Letters. (in press). (2000)
[Publications] T.Trajkovic,F.Udrea,P.R.Waind,J.Thomson,G.A.J.Amaratunga and W.I.Milne: "Design of 1.4KV Non-Punch-Through Trench IGBTs-The next genertion of High Power Switching Devices"IEE Special Issue on Power Semiconductor Devices. (in press). (2000)
[Publications] D.M.Garner and W.I.Milne: "Analytic Model for Turn-Off in the Silicon On Insulator LIGBT"IEEE Solid State Electronics. (in press). (2000)
[Publications] H.T.Lim,F.Udrea,W.I.Milne and P.Hemment: "Thin Partial SOI for Power Devices"Perspectives, Science and Technologies for Novel SOI Devices. 85-96(in press). (2000)
[Publications] D.M.Garner,F.Udrea,H.T.Lim and W.I.Milne: "An analytic model for turn off in the silicon-on-insulator LIGBT"SOLID-STATE ELECTRONICS. 43(10). 1855-1868 (1999)
[Publications] W.I.Milne and J.Robertson: "Amorphous Carbon"Encyclopedia of Materials, Ed. S.R. Elliott. (in press). (2000)
[Publications] F.Udrea,D.M.Garner,K.Shen,A.Propescu,H.T.Lim and W.I.Milne: "Soi Power Devices"IEE Electronics and Communications Engineering Journal. (in press). (2000)
[Publications] N.Morrison,S.Muhl,S.E.Rodil,A.Ferrari,M.Nesladek,W.I.Milne and J.Robertson: "Preparation, characterisation and Tribological Properties of ta-C: H Deposited Using an ECWR PBS"Phys, Stat. Solidi-Appl. Res.. 172(1). 79 (1999)
[Publications] T.Tarajkovic,F.Udrea,G.A.J.Amaratunga,W.I.Milne,S.S.Chan,P.R.Waind,J.Thomson and D.E.Crees: "Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology"International Jounal of Electronics. 86(10). 1153-1168 (1999)
[Publications] W.I.Milne: "Ta-C for Electronic Applications"Perspectives Science and Technologies for Novel SOI Devices. 85-96 (2000)
[Publications] M.A.Kastner,A.Aharony,R.J.Birgeneau,F.C.Chou,O.Entin-Wohlman,M.Greven,A.B.Harris,Y.J.Kim,Y.S.Lee,M.E.Parks and Q.Zhu: "Field Dependent Antiferromagnetism and Ferromagnetism of the Two Copper Sublattices in Sr2Cu3O4C12"Physical Review B. 59. 14702 (1999)
[Publications] R.J.Birgeneau,M.A.Kastner,Y.S.Lee,B.O.Wells,Y.Endoh,K.Yamadan and G.Shirane: "Instantaneous Spin Correlations in La2CuO4"Physical Review B. 59. 13788 (1999)
[Publications] V.Kiryukhin,Y.J.Wand,F.C.Chou,M.A.Kastner and R.J.Birgeneau: "X-ray-inducedstructural transition in La0.875Sr0.125MnO3"Physical Review B. 59. R6581 (1999)
[Publications] YJ.Kim,A.Aharony,R.J.Bigeneau,F.C Chou,O.Entin-Wohlman,R.W.Erwin,M.Greven,A.B.Harris,M.A.Kastner,I.Ya.Korenblit,Y.S.Lee and G.Shirane: "Ordering due to Quantum Fluctuations in Sr2Cu3O4C12"Physical Review Letters. 83. 852 (1999)
[Publications] F.Simmel,D.Abusch-Magder,D.A.Wharam,M.A.Kastner and J.P.Kotthaus: "Statistics of the Coulomb blockade peak spacinromagnetic correlations in La2-xSrxCu1-yZnyO"Physical Review B. 59. 6517 (1999)
[Publications] S.Wakimoto,G.Shirane,Y.Endoh,K.Hirota: "S.netic correlations in La2-xSrxCu1-yZnyO4"Physical Review B. 59. 6517 (1999)
[Publications] S.Wakimoto,G.Shirane,Y.Endoh,K.Hirota: "S.romagnetic correlations in La2-xSrxCu1-yZnyO4"Physical Review B. 59. 6517 (1999)
[Publications] Wakimoto S.,G.Shirane,Y.Endoh,K.Hirota,S.Ueki,K.Yamada,R.J.Birgeneau,M.A.Kastner,Y.S.Lee,P.M.Gehring and S.H.Lee: "Observation of incommensurate magnetic correlations at the lower critical concentration for superconductivity in La2-xSrxCuO4(x=0.05)"Physical Review B. 60. R769 (1999)
[Publications] Kim Y.J.,R.J.Birgeneau,M.A.Kastner,Y.S.Lee,Y.Endoh,G.Shirane and K.Yamada: "Quantum Monte Carlo study of weakly coupled spin ladders"Physical Review B. 60. 3294 (1999)
[Publications] YS.Lee,R.J.Birgeneau,M.A.Kastner,Y.Endoh,S.Wakimoto,K.Yamada,R.W.Erwin,S.-H.Lee and G.Shirane: "Neutron-scattering study of spin-density wave order in the superconducting state of excess-oxygen-doped La2CuO4+y"Physical Review B. 60. 3643 (1999)
[Publications] Kimura H.,H.Matsushita,K.Hirota,Y.Endoh,K.Yamada,Y.S.Lee,M.A.Kastner and R.J.Birgeneau: "Neutron scattering study of incommensurate elastic magnetic peaks in La1.88Sr0.12CuO4"Journal fo Physics and Chemistry of Solids. 60. 1067 (1999)
[Publications] S.Oda,S.Yamamoto,Z.Wang,H.Tobisaka and K.Nagata: "Atomic Layer MOCVD of oxide superconductors and dielectrics "High-Temperature Superconductors and Novel Inorganic Materials" Nato ASI Series 3 vol.62 (eds.by G.Van Tendeloo, E.V. Antipov and S.N. Putilin)"Kluwer Academic, Dordorecht. 75-78 (1999)
[Publications] W.I.Milne: "Atomic Layer MOCVD of oxide superconductors and dielectrics "High-Temperature Superconductors and Novel Inorganic Materials" Nato ASI Series 3 vol.62 (eds.by G.Van Tendeloo, E.V. Antipov and S.N. Putilin)"Kluwer Academic, Doedorecht. 75-78 (2000)

1999 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Principal Investigator

小田 俊理 東京工業大学, 量子効果トロニクス研究センター, 教授 (50126314)

Research Products

[Publications] S.Oda,D.F.Moore and W.I.Milne: "The nanostruturing of materials for device and sensor applications"Engineering Science and Education Journal. (in press). (2000)

[Publications] K.Nishiguchi and S.Oda: "Conductance quantization in nanoscale vertical-structure silicon field-effect transistors with a wrap gate"Applied Physics Letters. (in press). (2000)

[Publications] A.Dutta,and S.P.Lee,S.Hatatani and S.Oda: "Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electorn Beam Direct Writing"Applied Physics Letters. 75. 1422-1424 (2000)

[Publications] A.Dutta,S.P.Lee,Y.Hayafune,S.Hatatani and S.Oda: "Single Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process"Japanese Journal of Applied Physics. (in press). (2000)

[Publications] A.Dutta,S.P.Lee,Y.Hayafune and S.Oda: "A Novel Technique of Electron-Beam Direct-Writing for Fabrication of Nano-Devices"Japanese Journal of Applied Physics. (in press). (2000)

[Publications] S.Yamamoto,K.Nagata,S.Sugai,A.Sengoku,Y.Matsukawa,T.Hattori and S.Oda: "Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa2Cu3Ox Thinfilms Using Ultrasonic Gas Concentration Analyzer"Japanese Journal of Applied Physics. 38. 4727-4732 (1999)

[Publications] Z.Wang,T.Yasuda,S.Hatatani and S.Oda: "Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition"Japanese Journal of Applied Physics. 38. 6817-6820 (1999)

[Publications] S.Yamamoto,S.Sugai,Y.Matsukawa,A.Sengoku,H.TobisakaT.Hattori and S.Oda: "In situ growth monitoring during metalorganic chemical vapor deposition of YBa2Cu3Ox thinfilms by spectroscopic ellipsometory"Japanese Journal of Applied Physics. 38. L632-L635 (1999)

[Publications] S.Yamamoto,S.Sugai and S.Oda: "In situ process monitoring of MOCVD of superconducting and dielectric oxide thinfilms"Journal de Physique IV. 9. Pr8-1013-1020 (1999)

[Publications] Y.Fu,A.Dutta,M.Willander and S.Oda: "Electron wave interaction and carrier transport in Si-nanocrystal-based transistor"Journal of Applied Physics. (in press). (2000)

[Publications] K.Nishiguchi,S.Hara,T.Amano,S.Hatatani and S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates"Materials Research Society Symposium Proceedings. (in press). (2000)

[Publications] D.F.Moore,W.I.Milne and S.Oda: "Nanostructured materials and devices for sensor and electronic applications"Power Engineering Journal. 13. 89-93 (1999)

[Publications] F.Yun,B.J.Hinds,S.Hatatani,S.Oda,Q.X.Zhao and M.Willander: "Study of Structual and Optical Properties of Nanocrystalline Silicon Embedded in SIO2"Thin Solid Films. (in press). (2000)

[Publications] Y.Fu,M.Willander.A.Dutta and S.Oda: "Electron conduction through Si-Nanocrystal-based single electron transistor at zero gate bias"Journal of Applied Physics. (in press). (2000)

[Publications] A.Dutta,S.Oda,Y.Fu and M.Willander: "Electron Transport in Nanocrystalline-Si Based single Electron Transistors"Japanese Journal of Applied Physics. (in press). (2000)

[Publications] B.J.Hinds,K.Nishiguchi,A.Dutta,T.Yamanaka,S.Hatatani and S.Oda: "Two-Gate Transistor for the Study of Si/SiO2 Interface in SOI Nano-Channel and Nanocrystalline Si memory Device"Japanese Journal of Applied Physics. (in press). (2000)

[Publications] K.Ikeda,Y.Satoh,S.Sugahara and M.Matusmura: "Characterization of Silicon Atomic Layer Epitaxy by an Atomic Force Microscope"Electronic Material Conf.. (in press). (2000)

[Publications] Y.Uchida,K.Taguchi and M.Matsumura: "Improved Hydrogen Free Chemical Vapor Deposition of Silicon Oxide"J. Non-Crystalline Solids. 254. 011-016 (1999)

[Publications] M.Ozawa.C.H Oh and M.Matsumura: "Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin-Flms on Glassy Substrate"Japanese Journal of Applied Physics. 38(10). (1999)

[Publications] K.Usami,S.Sugahara,M.Kobayashi,K.Sumumura,T.Hattori and M.Matsumura: "Praparation and Charaterization of Silica Films with Higher-Alkyl Groups"J. Non-Crystalline Solids. 260. 199-207 (1999)

[Publications] Y.Uchida,K.Taguchi,S.Sugahara and M.Matsumura: "A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant"Japanese Journal of Applied Physics. 38(4B). 2368-2372 (1999)

[Publications] S.Sugahara,K.Usami and M.Matsumura: "A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application"Japanese Journal of Applied Physics. 38(3). 1428-1432 (1999)

[Publications] W.C.Yeh and M.Matsumura: "Preparation of Giant-Grain Seed Layer for Poly-Silicon Thin-Film Solar Cells"Japanese Journal of Applied Physics. 38(2A). L110-L112 (1999)

[Publications] M.Matsumura and C.H.Oh: "Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices"Thin Solid Films. 337. 123-128 (1999)

[Publications] M.Matsuyama,S.Sugahara,K.Ikeda,Y.Uchida and M.Matsumura: "Hetero Atomic-Layer Epitaxy of Ge on Si(100)"Japanese Journal of Applied Physics. 38. (1999)

[Publications] K.Ikeda,J.Yanase,S.Sugahara and M.Matsumura: "Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy"Materials Research Society Symposium Proceedings. (in press). (2000)

[Publications] J.H.Daniel and D.F.Moore: "A microaccelerometer structure fabricated in silicon-on-insulator using a focused ion beam process"Sensors and Actuators. A73. 201-209 (1999)

[Publications] R.R.A.Syms and D.F.Moore: "Focused ion beam tuning of in-plane vibrating micromechanical resonators"Electronics Letters. 35. 1277-1278 (1999)

[Publications] W.E.Booji,C.A.Elwell,E.J.Tarte,P.F.McBrien,F.Kahlmann,D.F.Moore,M.G.Blamire,N.H.Peng and C.Jeynes: "Electrical properties of electron and ion beam irradiated YBaCuO"IEEE Transactions Applied Superconductivity. 9. 2886 6 (1999)

[Publications] B.K.Tay,X.Shi,E.J.Liu,H.S.Tan,L.K.Cheah and W.I.Milne: "Heat tratment of tetrahedral amorphous carbon films grown by filtered cathodic vacuum-arc technique"Diamond and Related Materials. 8(7). 1328-1332 (1999)

[Publications] B.S.Satyanarayana,J.Robertson and W.I.Milne: "Low Threshold field Emission from Nanoclustered carbon Grown by Cathodic Arc"Journal of Applied Physics. (in press). (2000)

[Publications] A.Ilie,J.Robertson,N.Conway,B.Kleinsorge and W.I.Milne: "Photoconductivity and Recombination in DLC"Carbon. 37. 829-833 (1999)

[Publications] N.Tomozeiu and W.I.Milne: "Magnetic Dipole Confinement Used in a-C: H Film Deposition"J. Non Xtalline Solids. 249. 180-188 (1999)

[Publications] A.Ilie,J.Robertson,N.J.Conway,B.Kleinsorge and W.I.Milne: "Photoconductivity and recombination in diamond-like carbon"Diamond and Related Materials. 8(2-5). 549-553 (1999)

[Publications] A.Hart,B.S.Satyanarayana,W.I.Milne and J.Robertson: "Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material"Applied Physics Letters. 74(11). 1594 (1999)

[Publications] A.C.Ferrari,B.S.Satyanrayanan,J.Robertson and W.I.Milne,E.Barborini,P.Piseri and P.Milani: "Field Emission from Nanoclustered Carbon Films"EuroPhys Letts,. 46. 245 et seq (1999)

[Publications] K.Palinginis,Y.Lubianker,J.D.Cohen,A.Ilie,B.Kleinsorge and W.I.Milne: "Defect Densities in ta-C films via Junction Capacitance techiniques"Applied Physics Letters. 74(3). 371 (1999)

[Publications] N.Tomozeiu,A.Hart,B.Kleinsorge and W.I.Milne: "Optical and Electrical Properties of a-C: H Deposited by Mag.Confined r.f.PECVD"Diamond and Related Materials. 8. 522 (1999)

[Publications] C.Arena,B.Kleinsorge,J.Robertson,W.I.Milne and M.E.Welland: "Electronic and topographic structure of ta-C, ta-C: N and ta-C: B investigated by scanning tunnelling microscopy"Diamond and Related Materials. 8(2-5). 435-439 (1999)

[Publications] N.Morrison,S.Rodil,J.Robertson and W.I.Milne: "High Rate Deposition of ta-C: H Using ECWR"Thin Solid Films. 337(1-2). 70 (1999)

[Publications] A.Flewitt,J.Robertson and W.I.Milne: "The Growth Mechanism of a-Si: H Determined by in -situ STM"Jounal of Applied Physics. 85(12). 8032 (1999)

[Publications] A.Flewitto,W.I.Milne and J.Robertson: "Experimental Evidence for an Inhomogernous Surface Dangling Bond Limited Growth Mechanism for a-Si: H"J. Non-Xtalline Solids. (in press). (2000)

[Publications] Xu YZ.,Clough FJ.,Narayanan EMS.,Chen Y.,Milne WI.: "Turn-on characteristics of polycrystalline silicon TFT's-Impact of hydrogenation and channel lengh"IEEE El. Dev Letts. 20(2). 80-82 (1999)

[Publications] S.Uchikoga,D.Lai,J.Robertson,W.I.Milne,N.Hatzopolous,R.A.Yankov and M.Weiler: "Low Temperature Anodic Oxidation of silicon Using a Wave Resonance Plasma source"Applied Physics Letters. (in press). (2000)

[Publications] T.Trajkovic,F.Udrea,P.R.Waind,J.Thomson,G.A.J.Amaratunga and W.I.Milne: "Design of 1.4KV Non-Punch-Through Trench IGBTs-The next genertion of High Power Switching Devices"IEE Special Issue on Power Semiconductor Devices. (in press). (2000)

[Publications] D.M.Garner and W.I.Milne: "Analytic Model for Turn-Off in the Silicon On Insulator LIGBT"IEEE Solid State Electronics. (in press). (2000)

[Publications] H.T.Lim,F.Udrea,W.I.Milne and P.Hemment: "Thin Partial SOI for Power Devices"Perspectives, Science and Technologies for Novel SOI Devices. 85-96(in press). (2000)

[Publications] D.M.Garner,F.Udrea,H.T.Lim and W.I.Milne: "An analytic model for turn off in the silicon-on-insulator LIGBT"SOLID-STATE ELECTRONICS. 43(10). 1855-1868 (1999)

[Publications] W.I.Milne and J.Robertson: "Amorphous Carbon"Encyclopedia of Materials, Ed. S.R. Elliott. (in press). (2000)

[Publications] F.Udrea,D.M.Garner,K.Shen,A.Propescu,H.T.Lim and W.I.Milne: "Soi Power Devices"IEE Electronics and Communications Engineering Journal. (in press). (2000)

[Publications] N.Morrison,S.Muhl,S.E.Rodil,A.Ferrari,M.Nesladek,W.I.Milne and J.Robertson: "Preparation, characterisation and Tribological Properties of ta-C: H Deposited Using an ECWR PBS"Phys, Stat. Solidi-Appl. Res.. 172(1). 79 (1999)

[Publications] T.Tarajkovic,F.Udrea,G.A.J.Amaratunga,W.I.Milne,S.S.Chan,P.R.Waind,J.Thomson and D.E.Crees: "Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology"International Jounal of Electronics. 86(10). 1153-1168 (1999)

[Publications] W.I.Milne: "Ta-C for Electronic Applications"Perspectives Science and Technologies for Novel SOI Devices. 85-96 (2000)

[Publications] M.A.Kastner,A.Aharony,R.J.Birgeneau,F.C.Chou,O.Entin-Wohlman,M.Greven,A.B.Harris,Y.J.Kim,Y.S.Lee,M.E.Parks and Q.Zhu: "Field Dependent Antiferromagnetism and Ferromagnetism of the Two Copper Sublattices in Sr2Cu3O4C12"Physical Review B. 59. 14702 (1999)

[Publications] R.J.Birgeneau,M.A.Kastner,Y.S.Lee,B.O.Wells,Y.Endoh,K.Yamadan and G.Shirane: "Instantaneous Spin Correlations in La2CuO4"Physical Review B. 59. 13788 (1999)

[Publications] V.Kiryukhin,Y.J.Wand,F.C.Chou,M.A.Kastner and R.J.Birgeneau: "X-ray-inducedstructural transition in La0.875Sr0.125MnO3"Physical Review B. 59. R6581 (1999)

[Publications] YJ.Kim,A.Aharony,R.J.Bigeneau,F.C Chou,O.Entin-Wohlman,R.W.Erwin,M.Greven,A.B.Harris,M.A.Kastner,I.Ya.Korenblit,Y.S.Lee and G.Shirane: "Ordering due to Quantum Fluctuations in Sr2Cu3O4C12"Physical Review Letters. 83. 852 (1999)

[Publications] F.Simmel,D.Abusch-Magder,D.A.Wharam,M.A.Kastner and J.P.Kotthaus: "Statistics of the Coulomb blockade peak spacinromagnetic correlations in La2-xSrxCu1-yZnyO"Physical Review B. 59. 6517 (1999)

[Publications] S.Wakimoto,G.Shirane,Y.Endoh,K.Hirota: "S.netic correlations in La2-xSrxCu1-yZnyO4"Physical Review B. 59. 6517 (1999)

[Publications] S.Wakimoto,G.Shirane,Y.Endoh,K.Hirota: "S.romagnetic correlations in La2-xSrxCu1-yZnyO4"Physical Review B. 59. 6517 (1999)

[Publications] Wakimoto S.,G.Shirane,Y.Endoh,K.Hirota,S.Ueki,K.Yamada,R.J.Birgeneau,M.A.Kastner,Y.S.Lee,P.M.Gehring and S.H.Lee: "Observation of incommensurate magnetic correlations at the lower critical concentration for superconductivity in La2-xSrxCuO4(x=0.05)"Physical Review B. 60. R769 (1999)

[Publications] Kim Y.J.,R.J.Birgeneau,M.A.Kastner,Y.S.Lee,Y.Endoh,G.Shirane and K.Yamada: "Quantum Monte Carlo study of weakly coupled spin ladders"Physical Review B. 60. 3294 (1999)

[Publications] YS.Lee,R.J.Birgeneau,M.A.Kastner,Y.Endoh,S.Wakimoto,K.Yamada,R.W.Erwin,S.-H.Lee and G.Shirane: "Neutron-scattering study of spin-density wave order in the superconducting state of excess-oxygen-doped La2CuO4+y"Physical Review B. 60. 3643 (1999)

[Publications] Kimura H.,H.Matsushita,K.Hirota,Y.Endoh,K.Yamada,Y.S.Lee,M.A.Kastner and R.J.Birgeneau: "Neutron scattering study of incommensurate elastic magnetic peaks in La1.88Sr0.12CuO4"Journal fo Physics and Chemistry of Solids. 60. 1067 (1999)

[Publications] W.I.Milne: "Atomic Layer MOCVD of oxide superconductors and dielectrics "High-Temperature Superconductors and Novel Inorganic Materials" Nato ASI Series 3 vol.62 (eds.by G.Van Tendeloo, E.V. Antipov and S.N. Putilin)"Kluwer Academic, Doedorecht. 75-78 (2000)

小田俊理東京工業大学, 量子効果トロニクス研究センター, 教授 (50126314)