1998 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Research Project

Project/Area Number	10044146
Research Category	Grant-in-Aid for international Scientific Research
Section	Joint Research .
Research Institution	Nagoya University
Principal Investigator	一宮彪彦名古屋大学, 大学院工学研究科, 教授 (00023292)
Co-Investigator(Kenkyū-buntansha)	中原仁名古屋大学, 大学院・工学研究科, 助手 (20293649) 上羽牧夫名古屋大学, 大学院・理学研究科, 助教授 (30183213) 箕田弘喜東京工業大学, 理学部, 助手 (20240757) 八木克道東京工業大学, 理学部, 教授 (90016072) 岩崎裕大阪大学, 産業科学研究所, 教授 (00029901)
Keywords	半導体表面 / ステップ / エピタキシャル成長 / ナノ構造 / ステップエネルギー
Research Abstract	本研究では半導体表面に的を絞り、エピタキシャル成長や吸着・脱離過程、さらに昇華過程およびステップパンチング過程におけるステップ端での原子・分子の脱離付着機構に関する知見を得た。シリコン、GaAs、GaN表面におけるサーファクタント効果によるエピタキシャル成長中のステップ挙動の実験結果から、サーファクタントがステップにおける吸着障壁を変イビさせ、またステップエネルギーを大きく変化させることが明らかになった(一宮、中原、Cohen)。シリコン表面上に形成した単独の孤立したナノ構造の熱崩壊の過程を走査トンネル顕微鏡(STM)により観測し、その結果、ステップ端における吸着と脱離の過程がナノ構造全体のエネルギーに大きく依存することが明らかになった。また崩壊の過程におけるステップパンチングがステップ間の斥力の大きさによることも理論との協力によって明らかになった(一宮、上羽、Einstein)。さらにナノ構造の崩壊速度に関しても、物質、原子構造などによらない一般的なスケーリング側が成り立つことが明らかになった(一宮、上羽、Williams、Einstein)。半導体の高指数面におけるステップの挙動は反射電子顕微鏡法や低速電子顕微鏡法により、ステップの挙動が、金原子の吸着により変化し、それがファセット形成に大きく影響することを明らかにし、またシリコン高指数表面におけるステップバンチング、多段ステップのスティフネスの段差依存性を明らかにした(八木、箕田、岩崎、中原、Williams、Cohen、Einstein)。またSTMによるシリコン表面上の酸化膜選択除去プロセス及び界面におけるシリコン原子ステップ解析手法の開発を行った(岩崎、Williams)。

Research Products
(27 results)

All Other

All Publications (27 results)

[Publications] A.Ichimiya,Y.Tanaka and K.Hayashi: "Relaxation of nanostructures on the Si(111)(7×7)surface by high-temperature scanning tunneling microscopy," Surface Review and Latters.5. 821-832 (1998)
[Publications] E.A.Khramtsova and A.Ichimiya: "Comparative study of room-and high-temperature Si(111)-(√3×√3)R30°-Au structures using one-beam RHEED intensity rocking curve analysis," Phys.Rev.B57. 10049-10053 (1998)
[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "Study of the Si(111)"1x1"-Au surface using reflection high-energy electron diffraction and scanning tunneling microscopy," Jpn.J.Appl.Phys.37. 6511-6518 (1998)
[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "One monolayer of gold on Si(111)surface:Surface phase and phase transitions" Surface Sci.(印刷中). (1999)
[Publications] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Step Fluctuations on Vicinal Si(113)" Phys.Rev.Lett,. 80. 5152-5155 (1998)
[Publications] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Dynamics of Faceting on Vicinal Si(113)Studied by STM" Scanning Microscopy. (印刷中). (1999)
[Publications] K.Sudoh,T.Yoshinobu and H.Iwasaki: "Scanning Tunneling Microscopy Study of Faceting on Vicinal Si(113)" Jpn.J.Appl.Phys.,. (印刷中). (1999)
[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Low Energy Electron Beam Stimulated Surface Reaction:Selective Etching of SiO2/Si Using Scanning Tunneling Microscope" Jpn.J.Appl.Phys.,. 37(8B). L995-L998 (1998)
[Publications] M.Hildner,R.J.Phaneuf,and E.D.Williams,: "Imaging the Depletion Zone in a Si Lateral pn Junction with Scanning Tunneling Microscopy" Applied Physics Letters,. 72. 3314-3316 (1998)
[Publications] C.J.Lanczycki,Y.-N.Yang,E.Fu,R.Kotlyar,E.D.Williams,and S.Das Sarma: "Growth of Si on the Si(111)Surface." Physical Review,. B57. 13132-13148 (1998)
[Publications] M.Giesen,R.J.Phaneuf,E.D.Williams,and T.L.Einstein,: "Photoelectron Emission Microscopy of Schottky Contacts." Surface Science,. 396. 411-421 (1998)
[Publications] E.D.Williams,: "Nanostructure Evolution and Electromigration on Silicon Experimental Application of Length-Scaling Predictions." Solid State Communications,. 107. 681-691 (1998)
[Publications] X.-S.Wang and E.D.Williams,: "Step Structures on Br-Chemisorbed Vicinal Si(111)." Surface Science,. 400. 220-231 (1998)
[Publications] S.V.Khare and T.L.Einstein: "A Unified View of Step-Edge Fluctuations,," Phys.Rev.B57. 4782-4797 (1998)
[Publications] A.Schwennicke,X.-S.Wang,T.L.Einstein,and E.D.Williams: "Evolution of Surface Morphology of Vicinal Si(111) Surfaces After Aluminum Deposition.," Surface Sci.418. 22-31 (1998)
[Publications] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces" J.Appl.Phys.,. (印刷中). (1999)
[Publications] A.M.Dabiran,S.M.Seutter,S.Stoyanov,M.C.Bartelt,J.W.Evans,and P.I.Cohen.: "Step edge barriers vs step edge relaxation in GaAs:Sn MBE" Surf.Sci.,. (印刷中). (1999)
[Publications] A.M.Dabiran,S.M.Seutter,and P.I.Cohen: "Direct observations of the strain-limited island growth of Sn-doped GaAs(100)," Surf.Rev.Lett.,. 5. 783-795 (1998)
[Publications] R.Held,D.E.Crawford,A.M.Johnston,A.M.Dabiran,and P.I.Cohen,: "N-limited vs Ga-limited Growth on GaN B by MBE using Ammonia" Surf.Rev.Lett.,. 5. 913-934 (1998)
[Publications] A.V.Latyshev,H.Minoda,Y.Tanishira and K.Yagi: "Electromigration and gold-induced step bunching on the Si(111)surface" Surface Sci.401. 23-33 (1998)
[Publications] T.Shimakura,H.Minoda,Y.Tanishiro and K.Yagi: "In-situ study of gold-induced surface structures and step rearrangements on the Si(001)surface by high-temperature STM" Surface Sci.407. L657-L664 (1998)
[Publications] K.Aoki,,H.Minoda,Y.Tanishira and K.Yagi: "REM studies of adsorption-induced phase transitions and faceting in the Si(111)-Au system" Surface Review and Letters. 5. 653-663 (1998)
[Publications] T.Suzuki,H.Monoda,Y.Tanishira and K.Yagi: "TED study of Si(113)surfaces" Surface Review and Letters. 5. 249-254 (1998)
[Publications] M.Uwaha: "Anisotropy Effect on the Flow-Induced Instability of the Solid-Superfluid Interface" J.Low Temp.Phys.111 No.1/2. 37-48 (1998)
[Publications] M.Sato,M.Uwaha and Y.Saito: "Control of Chaotic Wandering of an Isolated Step by the Drift of Adatoms" Phys.Rev.Lett.80:No.19. 4233-4236 (1998)
[Publications] M.Uwaha and M.Sato: "Wandering and Bunching Instabilities of Steps Described by Nonlinear Evolution Equations" Surf.Rev.Lett.5・No.3. 841-849 (1998)
[Publications] M.Sato and M.Uwaha: "Hierarchical Bunching of Steps in a Conserved System" J.Phys.Soc.Jpn.67 No.11. 3675-3678 (1998)

1998 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Principal Investigator

一宮 彪彦 名古屋大学, 大学院工学研究科, 教授 (00023292)

Research Products

[Publications] A.Ichimiya,Y.Tanaka and K.Hayashi: "Relaxation of nanostructures on the Si(111)(7×7)surface by high-temperature scanning tunneling microscopy," Surface Review and Latters.5. 821-832 (1998)

[Publications] E.A.Khramtsova and A.Ichimiya: "Comparative study of room-and high-temperature Si(111)-(√3×√3)R30°-Au structures using one-beam RHEED intensity rocking curve analysis," Phys.Rev.B57. 10049-10053 (1998)

[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "Study of the Si(111)"1x1"-Au surface using reflection high-energy electron diffraction and scanning tunneling microscopy," Jpn.J.Appl.Phys.37. 6511-6518 (1998)

[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi and A.Ichimiya: "One monolayer of gold on Si(111)surface:Surface phase and phase transitions" Surface Sci.(印刷中). (1999)

[Publications] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Step Fluctuations on Vicinal Si(113)" Phys.Rev.Lett,. 80. 5152-5155 (1998)

[Publications] K.Sudoh,T.Yoshinobu,H.Iwasaki and E.D.Williams: "Dynamics of Faceting on Vicinal Si(113)Studied by STM" Scanning Microscopy. (印刷中). (1999)

[Publications] K.Sudoh,T.Yoshinobu and H.Iwasaki: "Scanning Tunneling Microscopy Study of Faceting on Vicinal Si(113)" Jpn.J.Appl.Phys.,. (印刷中). (1999)

[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Low Energy Electron Beam Stimulated Surface Reaction:Selective Etching of SiO2/Si Using Scanning Tunneling Microscope" Jpn.J.Appl.Phys.,. 37(8B). L995-L998 (1998)

[Publications] M.Hildner,R.J.Phaneuf,and E.D.Williams,: "Imaging the Depletion Zone in a Si Lateral pn Junction with Scanning Tunneling Microscopy" Applied Physics Letters,. 72. 3314-3316 (1998)

[Publications] C.J.Lanczycki,Y.-N.Yang,E.Fu,R.Kotlyar,E.D.Williams,and S.Das Sarma: "Growth of Si on the Si(111)Surface." Physical Review,. B57. 13132-13148 (1998)

[Publications] M.Giesen,R.J.Phaneuf,E.D.Williams,and T.L.Einstein,: "Photoelectron Emission Microscopy of Schottky Contacts." Surface Science,. 396. 411-421 (1998)

[Publications] E.D.Williams,: "Nanostructure Evolution and Electromigration on Silicon Experimental Application of Length-Scaling Predictions." Solid State Communications,. 107. 681-691 (1998)

[Publications] X.-S.Wang and E.D.Williams,: "Step Structures on Br-Chemisorbed Vicinal Si(111)." Surface Science,. 400. 220-231 (1998)

[Publications] S.V.Khare and T.L.Einstein: "A Unified View of Step-Edge Fluctuations,," Phys.Rev.B57. 4782-4797 (1998)

[Publications] A.Schwennicke,X.-S.Wang,T.L.Einstein,and E.D.Williams: "Evolution of Surface Morphology of Vicinal Si(111) Surfaces After Aluminum Deposition.," Surface Sci.418. 22-31 (1998)

[Publications] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces" J.Appl.Phys.,. (印刷中). (1999)

[Publications] A.M.Dabiran,S.M.Seutter,S.Stoyanov,M.C.Bartelt,J.W.Evans,and P.I.Cohen.: "Step edge barriers vs step edge relaxation in GaAs:Sn MBE" Surf.Sci.,. (印刷中). (1999)

[Publications] A.M.Dabiran,S.M.Seutter,and P.I.Cohen: "Direct observations of the strain-limited island growth of Sn-doped GaAs(100)," Surf.Rev.Lett.,. 5. 783-795 (1998)

[Publications] R.Held,D.E.Crawford,A.M.Johnston,A.M.Dabiran,and P.I.Cohen,: "N-limited vs Ga-limited Growth on GaN B by MBE using Ammonia" Surf.Rev.Lett.,. 5. 913-934 (1998)

[Publications] A.V.Latyshev,H.Minoda,Y.Tanishira and K.Yagi: "Electromigration and gold-induced step bunching on the Si(111)surface" Surface Sci.401. 23-33 (1998)

[Publications] T.Shimakura,H.Minoda,Y.Tanishiro and K.Yagi: "In-situ study of gold-induced surface structures and step rearrangements on the Si(001)surface by high-temperature STM" Surface Sci.407. L657-L664 (1998)

[Publications] K.Aoki,,H.Minoda,Y.Tanishira and K.Yagi: "REM studies of adsorption-induced phase transitions and faceting in the Si(111)-Au system" Surface Review and Letters. 5. 653-663 (1998)

[Publications] T.Suzuki,H.Monoda,Y.Tanishira and K.Yagi: "TED study of Si(113)surfaces" Surface Review and Letters. 5. 249-254 (1998)

[Publications] M.Uwaha: "Anisotropy Effect on the Flow-Induced Instability of the Solid-Superfluid Interface" J.Low Temp.Phys.111 No.1/2. 37-48 (1998)

[Publications] M.Sato,M.Uwaha and Y.Saito: "Control of Chaotic Wandering of an Isolated Step by the Drift of Adatoms" Phys.Rev.Lett.80:No.19. 4233-4236 (1998)

[Publications] M.Uwaha and M.Sato: "Wandering and Bunching Instabilities of Steps Described by Nonlinear Evolution Equations" Surf.Rev.Lett.5・No.3. 841-849 (1998)

[Publications] M.Sato and M.Uwaha: "Hierarchical Bunching of Steps in a Conserved System" J.Phys.Soc.Jpn.67 No.11. 3675-3678 (1998)

一宮彪彦名古屋大学, 大学院工学研究科, 教授 (00023292)