1999 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Research Project

Project/Area Number	10044146
Research Category	Grant-in-Aid for Scientific Research (B)
Research Institution	Nagoya University
Principal Investigator	一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)
Co-Investigator(Kenkyū-buntansha)	箕田弘喜東京工業大学, 理学部, 助手 (20240757) 八木克道東京工業大学, 理学部, 教授 (90016072) 岩崎裕大阪大学, 産業科学研究所, 教授 (00029901) 中原仁名古屋大学, 工学研究科, 助手 (20293649) 上羽牧夫名古屋大学, 理学研究科, 助教授 (30183213)
Keywords	半導体表面 / ステップ / エピタキシャル成長 / ナノ構造 / ステップエネルギー
Research Abstract	本研究では半導体表面に的を絞り、表面の動的過程、特にエピタキシャル成長や吸着・脱離過程、さらに昇華過程およびステップバンチング過程におけるステップ端での原子・分子の脱離付着機構に関する知見を得た。シリコン、GaAs、GaN表面におけるサーフアクタント効果によるエピタキシャル成長中のステップ挙動の実験結果から、サーフアクタントがステップにおける吸着障壁を変化させ、またステップエネルギーを大きく変化させることが明らかになった(一宮、中原、Cohen)。またシリコン高指数表面の金属吸着によるファセット形成の観察から、吸着による安定表面指数の変化についての知見を得た(中原、八木、箕田)。シリコン表面上に形成した単独の孤立したナノ構造の熱崩壊の過程を走査トンネル顕微鏡(STM)により観測し、その結果、ステップ端における吸着と脱離の過程がナノ構造全体のエネルギーに大きく依存することが明らかになった。また崩壊の過程におけるステップバンチングがステップ間の斥力の大きさによることも理論との協力によって明らかになった(一宮、上羽、Einstein)。さらにナノ構造の崩壊速度に関しても、物資、原子構造などによらない一般的なスケーリング則が成り立ち、さらに2次元ナノ構造の崩壊過程と3次元ナノ構造の崩壊過程の相関が明らかになった(一宮、上羽、Williams、Einstein)。またSTMによるシリコン表面上の酸化膜選択除去プロセス及び界面におけるシリコン原子ステップ解析手法の開発を行った(岩崎、Williams)。

Research Products
(28 results)

All Other

All Publications (28 results)

[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi,and A.Ichimiya: "One monolayer of gold on an Si(III) surface: surface phases and phase transitions."Surface Sci.. 433-435. 405-409 (1999)
[Publications] 一宮彪彦: "シリコン表面における孤立したナノ構造の緩和過程"日本物理学会誌. 54. 869-877 (1999)
[Publications] 一宮彪彦、林和彦: "シリコン表面におけるピラミッドの形成と崩壊"電子顕微鏡. 34. 193-196 (1999)
[Publications] 一宮彪彦、林和彦: "Si(III)表面上の孤立したシリコン島状結晶の緩和過程"表面科学. 20. 865-871 (1999)
[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Nano-fabrication on Si oxide/Si surface by using STM: a low energy electron beam stimulated reaction"Appl.Surf.Sci.. 141. 305-312 (1999)
[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Nano-fabrication on SiO2/Si with scanning tunneling microscope: mechanism and towards nano-lithography with a SiO2 mask"Appl.Phys.Lett.. 74. 1621-1623 (1999)
[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Low-energy electron stimulated etching of thin Si-oxide layer in nanometer scale using scanning tunneling microscope"Jpn.J.Appl.Phys.. 38. L252-L254 (1999)
[Publications] H.Iwasaki,N.Li,and T.Yoshinobu: "STM Nano Fabrication Process Using SiO2 Film"J.of The Surface Science Society of Japan. 20. 49-56 (1999)
[Publications] Naotada Ueda,Koichi Sudoh,Nan Li,Tatsuo Yoshinobu and Hiroshi Iwasaki: "Controllable nano-pit formation on Si surface with scanning tunneling microscope"Jpn.J.Appl.Phys.. 38. 5236-5238 (1999)
[Publications] Ippei Kawamoto,Nan Li,Tatsuo Yoshinobu and Hiroshi Iwasaki: "Experimental Measurement of the Intensity Profiles of a Low-Energy Electron Beam Extracted from a Scanning Tunneling Microscope Tip by Field Emission"Jpn.J.Appl.Phys.. 38. 6172-6173 (1999)
[Publications] H.Minoda and K.Yagi: "Surface morphology of Au-adsorbed Si(001) vicinal surfaces studied by reflection electron microscopy"Surface Sci.. 437. L761-L766 (1999)
[Publications] Y.Takahashi,H.Minoda,Y.Tanishiro and K.Yagi: "Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy"Surface Sci.. 433-435. 512-516 (1999)
[Publications] T.Suzuki,H.Minoda,Y.Tanishiro and K.Yagi:: "TED analysis of the Si(113) surface structure"Surface Sci.. 438. 76-82 (1999)
[Publications] N.Kurahashi,H.Minoda,Y.Tanishiro and K.Yagi:: "In-situ REM study of Au-induced faceting on high index Si Surfaces"Surface Sci.. 438. 91-96 (1999)
[Publications] H.Minoda,Y.Takahashi,Y.Tanishiro and K.Yagi:: "In-situ REM study of Cu-induced step bunching on Si(111) vicinal surfaces,Proc."Surface Sci.. 438. 68-75 (1999)
[Publications] 八木克道、出川雅士、西村穂積、鈴木孝将、箕田弘喜、谷城康眞: "Si微斜面上での通電効果と表面形態"表面科学. 41. (1999)
[Publications] T.L.Einstein and O.Pierre-Louis: "Implications of Random-Matrix Theory for Terrace-Width Distributions on Vicinal Surfaces: Improved Approximations and Exact Results"Surface Sci.. 424. L299-L308 (1999)
[Publications] O.Pierre-Louis,M.R.DOrsogna,and T.L.Einstein,: "Edge Diffusion During Growth: the KinK Ehrlich-Schwoebel Effect and Resulting Instabilities"Phys.Rev.Lett.. 82. 3661-3664 (1999)
[Publications] M.I.Haftel and T.L.Einstein: "Influence of the Electrochemical Environment on Diffusion Processes Near Step and Island Edges: Ag(111) and Ag(100)"MRS proceedings,. (印刷中).
[Publications] M.Giesen and T.L.Einstein: "Analysis of Terrace Width Distributions on Vicinal Copper Surfaces Using the Wigner Surmise: Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)
[Publications] H.L.Richards,Saul D.Cohen,T.L.Einstein and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Distributions: Statistical and Analytic Considerations"Surface Sci.. (印刷中).
[Publications] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha,and K.Watanabe: "Thermal Decay of Silicon Mounds on the Si(111)7・7 Surface"Phys.Rev.Lett.. (印刷中).
[Publications] M.Sato and M.Uwaha: "Change of Wandering Pattern with Anisotropy in Step Kinetics"J.Cryst.Growth. 198/199 No.1. 38-42 (1999)
[Publications] M.Sato and M.Uwaha: "Effect of Crystal Anisotropy on Instabilities of Flat Interfaces"Journal of the Japanese Association for Crystal Growth. 26・1. 31-39 (1999)
[Publications] M.Sato and M.Uwaha: "Growth of Step Bunches Formed by the Drift of Adatoms"Surface Science. 442・2. 318-328 (1999)
[Publications] M.Sato and M.Uwaha: "Pattern Formation in the Instability of a Vicinal Surface by the Drift of Adatoms"Physical Review E,. 60・6. 7120-7125 (1999)
[Publications] M.Sato and M.Uwaha: "Step bunching Induced by the Drift of Adatoms"Journal of The Surface Science Society of Japan. 20・12. 859-864 (1999)
[Publications] 一宮彪彦(共著)、原田仁平他編: "結晶解析ハンドブック"共立出版. 702

1999 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Principal Investigator

一宮 彪彦 名古屋大学, 工学研究科, 教授 (00023292)

Research Products

[Publications] E.A.Khramtsova,H.Sakai,K.Hayashi,and A.Ichimiya: "One monolayer of gold on an Si(III) surface: surface phases and phase transitions."Surface Sci.. 433-435. 405-409 (1999)

[Publications] 一宮彪彦: "シリコン表面における孤立したナノ構造の緩和過程"日本物理学会誌. 54. 869-877 (1999)

[Publications] 一宮彪彦、林和彦: "シリコン表面におけるピラミッドの形成と崩壊"電子顕微鏡. 34. 193-196 (1999)

[Publications] 一宮彪彦、林和彦: "Si(III)表面上の孤立したシリコン島状結晶の緩和過程"表面科学. 20. 865-871 (1999)

[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Nano-fabrication on Si oxide/Si surface by using STM: a low energy electron beam stimulated reaction"Appl.Surf.Sci.. 141. 305-312 (1999)

[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Nano-fabrication on SiO2/Si with scanning tunneling microscope: mechanism and towards nano-lithography with a SiO2 mask"Appl.Phys.Lett.. 74. 1621-1623 (1999)

[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Low-energy electron stimulated etching of thin Si-oxide layer in nanometer scale using scanning tunneling microscope"Jpn.J.Appl.Phys.. 38. L252-L254 (1999)

[Publications] H.Iwasaki,N.Li,and T.Yoshinobu: "STM Nano Fabrication Process Using SiO2 Film"J.of The Surface Science Society of Japan. 20. 49-56 (1999)

[Publications] Naotada Ueda,Koichi Sudoh,Nan Li,Tatsuo Yoshinobu and Hiroshi Iwasaki: "Controllable nano-pit formation on Si surface with scanning tunneling microscope"Jpn.J.Appl.Phys.. 38. 5236-5238 (1999)

[Publications] Ippei Kawamoto,Nan Li,Tatsuo Yoshinobu and Hiroshi Iwasaki: "Experimental Measurement of the Intensity Profiles of a Low-Energy Electron Beam Extracted from a Scanning Tunneling Microscope Tip by Field Emission"Jpn.J.Appl.Phys.. 38. 6172-6173 (1999)

[Publications] H.Minoda and K.Yagi: "Surface morphology of Au-adsorbed Si(001) vicinal surfaces studied by reflection electron microscopy"Surface Sci.. 437. L761-L766 (1999)

[Publications] Y.Takahashi,H.Minoda,Y.Tanishiro and K.Yagi: "Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy"Surface Sci.. 433-435. 512-516 (1999)

[Publications] T.Suzuki,H.Minoda,Y.Tanishiro and K.Yagi:: "TED analysis of the Si(113) surface structure"Surface Sci.. 438. 76-82 (1999)

[Publications] N.Kurahashi,H.Minoda,Y.Tanishiro and K.Yagi:: "In-situ REM study of Au-induced faceting on high index Si Surfaces"Surface Sci.. 438. 91-96 (1999)

[Publications] H.Minoda,Y.Takahashi,Y.Tanishiro and K.Yagi:: "In-situ REM study of Cu-induced step bunching on Si(111) vicinal surfaces,Proc."Surface Sci.. 438. 68-75 (1999)

[Publications] 八木克道、出川雅士、西村穂積、鈴木孝将、箕田弘喜、谷城康眞: "Si微斜面上での通電効果と表面形態"表面科学. 41. (1999)

[Publications] T.L.Einstein and O.Pierre-Louis: "Implications of Random-Matrix Theory for Terrace-Width Distributions on Vicinal Surfaces: Improved Approximations and Exact Results"Surface Sci.. 424. L299-L308 (1999)

[Publications] O.Pierre-Louis,M.R.DOrsogna,and T.L.Einstein,: "Edge Diffusion During Growth: the KinK Ehrlich-Schwoebel Effect and Resulting Instabilities"Phys.Rev.Lett.. 82. 3661-3664 (1999)

[Publications] M.I.Haftel and T.L.Einstein: "Influence of the Electrochemical Environment on Diffusion Processes Near Step and Island Edges: Ag(111) and Ag(100)"MRS proceedings,. (印刷中).

[Publications] M.Giesen and T.L.Einstein: "Analysis of Terrace Width Distributions on Vicinal Copper Surfaces Using the Wigner Surmise: Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)

[Publications] H.L.Richards,Saul D.Cohen,T.L.Einstein and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Distributions: Statistical and Analytic Considerations"Surface Sci.. (印刷中).

[Publications] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha,and K.Watanabe: "Thermal Decay of Silicon Mounds on the Si(111)7・7 Surface"Phys.Rev.Lett.. (印刷中).

[Publications] M.Sato and M.Uwaha: "Change of Wandering Pattern with Anisotropy in Step Kinetics"J.Cryst.Growth. 198/199 No.1. 38-42 (1999)

[Publications] M.Sato and M.Uwaha: "Effect of Crystal Anisotropy on Instabilities of Flat Interfaces"Journal of the Japanese Association for Crystal Growth. 26・1. 31-39 (1999)

[Publications] M.Sato and M.Uwaha: "Growth of Step Bunches Formed by the Drift of Adatoms"Surface Science. 442・2. 318-328 (1999)

[Publications] M.Sato and M.Uwaha: "Pattern Formation in the Instability of a Vicinal Surface by the Drift of Adatoms"Physical Review E,. 60・6. 7120-7125 (1999)

[Publications] M.Sato and M.Uwaha: "Step bunching Induced by the Drift of Adatoms"Journal of The Surface Science Society of Japan. 20・12. 859-864 (1999)

[Publications] 一宮彪彦(共著)、原田仁平他編: "結晶解析ハンドブック"共立出版. 702

一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)