2000 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Research Project

Project/Area Number	10044146
Research Institution	Nagoya University
Principal Investigator	一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)
Co-Investigator(Kenkyū-buntansha)	箕田弘喜東京工業大学, 理学部, 助手 (20240757) 八木克道東京工業大学, 理学部, 名誉教授 (90016072) 岩崎裕大阪大学, 産業科学研究所, 教授 (00029901) 中原仁名古屋大学, 工学研究科, 助手 (20293649) 上羽牧夫名古屋大学, 理学研究科, 助教授 (30183213)
Keywords	半導体表面 / ステップ / エピタキシャル成長 / ナノ構造 / ステップエネルギー
Research Abstract	本研究では半導体表面に的を絞り、表面の動的過程、特にエピタキシャル成長や吸着・脱離過程、さらに昇華過程およびステップバンチング過程におけるステップ端での原子・分子の脱離付着機構に関する知見を得た。シリコン、GaAs、GaN表面におけるサーフアクタント効果によるエピタキシャル成長中のステップ挙動の実験結果から、サーフアクタントがステップにおける吸着障壁を変化させ、またステップエネルギーを大きく変化させることが明らかになった(一宮、中原、Cohen)。またシリコン高指数表面の金属吸着によるファセット形成の観察から、吸着による安定表面指数の変化についての知見を得た(中原、八木、箕田)。シリコン表面上に形成した単独の孤立したナノ構造の熱崩壊の過程を走査トンネル顕微鏡(STM)により観測し、その結果、ステップ端における吸着と脱離の過程がナノ構造全体のエネルギーに大きく依存することが明らかになった。また崩壊の過程におけるステップバンチングがステップ間の斥力の大きさによることも理論との協力によって明らかになった(一宮、上羽、Einstein)。さらにナノ構造の崩壊速度に関しても、物質、原子構造などによらない一般的なスケーリング則が成り立ち、さらに2次元ナノ構造の崩壊過程と3次元ナノ構造の崩壊過程の相関が明らかになった(一宮、上羽、Williams、Einstein)。またSTMによるシリコン表面上の酸化膜選択除去プロセス及び界面におけるシリコン原子ステップ解析手法の開発を行った(岩崎、Williams)。

Research Products

(24 results)

All Other

All Publications (24 results)

[Publications] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha and K.Watanabe: "Decay of Silicon Mound : Scaling Laws and Description with Continuum Step Parameters."Phys.Rev.Lett.. 84. 3662-3665 (2000)
[Publications] K.Hayashi and A.Ichimiya: "Formation and Decay Processes of Three-Dimensional Silicon Islands on the Si(111)7×7 Surface."Appl.Surf.Sci.. 162/163. 37-41 (2000)
[Publications] A.Ichimiya and K.Hayashi,: "Thermal Decay of Isolated Single Silicon Mounds on Si(111) Surfaces"Surface Rev.Lett.. 7. 571-576 (2000)
[Publications] 一宮彪彦,林和彦: "シリコン表面に形成されたナノ構造の安定性と崩壊"応用物理. 69. 1330-1334 (2000)
[Publications] A.Ichimiya,M.Suzuki and S.Nishida,: "Thermal Relaxation of Isolated Silicon Pyramids on the Si(100)2×1 Surface."Surf.Sci.. (印刷中). (2001)
[Publications] H.Suzuki,H.Nakahara,S.Miyata and A.Ichimiya,: "Surface Morphology of Ga-Adsorbed Si(113) Surface."Surface Science,. (印刷中). (2001)
[Publications] M.Uwaha and K.Watanabe: "Decay of an Island on a Facet via Surface Diffusion"J.Phys.Soc.Jpn.. 69. 497-503 (2000)
[Publications] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Steps Induced by the Drift of Adatoms and Effect of the Step Permeability"Phys.Rev.. B62. 8452-8472 (2000)
[Publications] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Permeable Steps Induced by the Drift of Adatoms"Surf.Rev.Lett.. 7-5/6. 607-611 (2000)
[Publications] R.Held,B.Ishaug,A.M.Dabiran,A.Parkhomovsky,and P.I.Cohen,: "Rate equation model of GaN epitaxy on GaN B by Molecular Beam Epitaxy,"J.Appl.Phys.,. V87. 1219-1223 (2000)
[Publications] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces,"J.Appl.Phys.,. V85. 7697-7701 (1999)
[Publications] A.Parkhomovsky,B.Ishaug,A.M.Dabiran,and P.I.Cohen,: "Growth of Hf and HfN on GaN by molecular beam epitaxy,"J.Vac.Sci.Technol.,. VA17. 2162-2166 (1999)
[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Scanning tunneling microscopy nanofabricatin of electronic industry compatible thermal Si oxide"Ultramicroscopy,. 82,1-4. 97-101 (2000)
[Publications] K.Sudoh and H.Iwasaki: "Nanopit Formation and Manipulation of Steps on Si(001) at High Temperatures with a Scanning Tunneling Microscope"Jpn.J.Appl.Phys.,. 39. 4621-4623 (2000)
[Publications] M.Gotoh,K.Sudoh and H.Iwasaki: "Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy"J.Vac.Sci.Technol.. B18(4)Jul/Aug. 2165-2163 (2000)
[Publications] H.Minoda,T.Shimakura,K.Yagi,F-J Meyer zu Herringdorf and M.Horn von Hoegen: "Formation of hill and valley structures on Si(111) vicinal surfaces studied by spot-profile-analyzing LEED,"Phys.Rev.. B61. 5672-5678 (2000)
[Publications] M.Degawa,K.Thuermer,Morishima,H.Minoda,K.Yagi and E.D.Williams :: "Initial stage of in-phase step wandering on Si(111) vicnal surfaces"Surface Sci.. (印刷中). (2001)
[Publications] D.Degawa,H.Minoda,Y.Tanishiro and K.Yagi: "In-phase step wandering on Si(111) vicinal surfaces : Effect of direct current heating tilted from the step-dwon direction."Phys.Rev.. (印刷中). (2001)
[Publications] K.Sudoh,H.Iwasaki,and E.D.Williams,: "Facet Growth due to attractive step-step interactions on vicinal Si(113),"Surface Science. 452. L273-L278 (2000)
[Publications] S.Aggarwal,A.P.Monga,S.R.Perusse,R.Ramesh,V.Ballarotto,E.D.Williams,B.R.Chalamala,Y.Wei,and R.H.Reuss,: "Spontaneous Ordering of Oxide Nanostructures,"Science. 287. 2235-2237 (2000)
[Publications] J.-Y.Park,R.J.Phaneuf,and E.D.Williams,: "Variation of Threshold Field in Field-Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide,"Surface Science. 470. L69-L74 (2000)
[Publications] M.Giesen and T.L.Einstein,: "Analysis of Terrace Width Distributions on Vicinal CopperSurfaces Using the Wigner Surmise : Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)
[Publications] H.L.Richards,Saul D.Cohen,T.L.Einstein,and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Width Distributions : Statistical and Analytic Considerations,"Surface Sci.. 453. 59-74 (2000)
[Publications] O.Pierre-Louis and T.L.Einstein,: "Electromigration of Single-Layer Clusters,"Phys.Rev.. B・62. 13697-13706 (2000)

2000 Fiscal Year Annual Research Report

半導体表面におけるステップダイナミクス

Principal Investigator

一宮 彪彦 名古屋大学, 工学研究科, 教授 (00023292)

Research Products

[Publications] A.Ichimiya,K.Hayashi,E.D.Williams,T.L.Einstein,M.Uwaha and K.Watanabe: "Decay of Silicon Mound : Scaling Laws and Description with Continuum Step Parameters."Phys.Rev.Lett.. 84. 3662-3665 (2000)

[Publications] K.Hayashi and A.Ichimiya: "Formation and Decay Processes of Three-Dimensional Silicon Islands on the Si(111)7×7 Surface."Appl.Surf.Sci.. 162/163. 37-41 (2000)

[Publications] A.Ichimiya and K.Hayashi,: "Thermal Decay of Isolated Single Silicon Mounds on Si(111) Surfaces"Surface Rev.Lett.. 7. 571-576 (2000)

[Publications] 一宮彪彦,林和彦: "シリコン表面に形成されたナノ構造の安定性と崩壊"応用物理. 69. 1330-1334 (2000)

[Publications] A.Ichimiya,M.Suzuki and S.Nishida,: "Thermal Relaxation of Isolated Silicon Pyramids on the Si(100)2×1 Surface."Surf.Sci.. (印刷中). (2001)

[Publications] H.Suzuki,H.Nakahara,S.Miyata and A.Ichimiya,: "Surface Morphology of Ga-Adsorbed Si(113) Surface."Surface Science,. (印刷中). (2001)

[Publications] M.Uwaha and K.Watanabe: "Decay of an Island on a Facet via Surface Diffusion"J.Phys.Soc.Jpn.. 69. 497-503 (2000)

[Publications] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Steps Induced by the Drift of Adatoms and Effect of the Step Permeability"Phys.Rev.. B62. 8452-8472 (2000)

[Publications] M.Sato,M.Uwaha and Y.Saito: "Instabilities of Permeable Steps Induced by the Drift of Adatoms"Surf.Rev.Lett.. 7-5/6. 607-611 (2000)

[Publications] R.Held,B.Ishaug,A.M.Dabiran,A.Parkhomovsky,and P.I.Cohen,: "Rate equation model of GaN epitaxy on GaN B by Molecular Beam Epitaxy,"J.Appl.Phys.,. V87. 1219-1223 (2000)

[Publications] R.Held,G.Nowak,A.M.Dabiran,B.Ishaug,A.Parkhomovsky,and P.I.Cohen,I.Grzegory,and S.Porowski,: "Structure and composition of GaN(0001) A and B surfaces,"J.Appl.Phys.,. V85. 7697-7701 (1999)

[Publications] A.Parkhomovsky,B.Ishaug,A.M.Dabiran,and P.I.Cohen,: "Growth of Hf and HfN on GaN by molecular beam epitaxy,"J.Vac.Sci.Technol.,. VA17. 2162-2166 (1999)

[Publications] N.Li,T.Yoshinobu and H.Iwasaki: "Scanning tunneling microscopy nanofabricatin of electronic industry compatible thermal Si oxide"Ultramicroscopy,. 82,1-4. 97-101 (2000)

[Publications] K.Sudoh and H.Iwasaki: "Nanopit Formation and Manipulation of Steps on Si(001) at High Temperatures with a Scanning Tunneling Microscope"Jpn.J.Appl.Phys.,. 39. 4621-4623 (2000)

[Publications] M.Gotoh,K.Sudoh and H.Iwasaki: "Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy"J.Vac.Sci.Technol.. B18(4)Jul/Aug. 2165-2163 (2000)

[Publications] H.Minoda,T.Shimakura,K.Yagi,F-J Meyer zu Herringdorf and M.Horn von Hoegen: "Formation of hill and valley structures on Si(111) vicinal surfaces studied by spot-profile-analyzing LEED,"Phys.Rev.. B61. 5672-5678 (2000)

[Publications] M.Degawa,K.Thuermer,Morishima,H.Minoda,K.Yagi and E.D.Williams :: "Initial stage of in-phase step wandering on Si(111) vicnal surfaces"Surface Sci.. (印刷中). (2001)

[Publications] D.Degawa,H.Minoda,Y.Tanishiro and K.Yagi: "In-phase step wandering on Si(111) vicinal surfaces : Effect of direct current heating tilted from the step-dwon direction."Phys.Rev.. (印刷中). (2001)

[Publications] K.Sudoh,H.Iwasaki,and E.D.Williams,: "Facet Growth due to attractive step-step interactions on vicinal Si(113),"Surface Science. 452. L273-L278 (2000)

[Publications] S.Aggarwal,A.P.Monga,S.R.Perusse,R.Ramesh,V.Ballarotto,E.D.Williams,B.R.Chalamala,Y.Wei,and R.H.Reuss,: "Spontaneous Ordering of Oxide Nanostructures,"Science. 287. 2235-2237 (2000)

[Publications] J.-Y.Park,R.J.Phaneuf,and E.D.Williams,: "Variation of Threshold Field in Field-Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide,"Surface Science. 470. L69-L74 (2000)

[Publications] M.Giesen and T.L.Einstein,: "Analysis of Terrace Width Distributions on Vicinal CopperSurfaces Using the Wigner Surmise : Comparison with Gaussian Approximation"Surface Sci.. 449. 191-206 (2000)

[Publications] H.L.Richards,Saul D.Cohen,T.L.Einstein,and M.Giesen,: "Extraction of Step-Repulsions Strengths from Terrace Width Distributions : Statistical and Analytic Considerations,"Surface Sci.. 453. 59-74 (2000)

[Publications] O.Pierre-Louis and T.L.Einstein,: "Electromigration of Single-Layer Clusters,"Phys.Rev.. B・62. 13697-13706 (2000)

一宮彪彦名古屋大学, 工学研究科, 教授 (00023292)