1998 Fiscal Year Annual Research Report

ワイドギャップ半導体ナノ量子ドットの構築

Research Project

Project/Area Number	10305001
Research Category	Grant-in-Aid for Scientific Research (A)
Research Institution	Tohoku University
Principal Investigator	八百隆文東北大学, 金属材料研究所, 教授 (60230182)
Co-Investigator(Kenkyū-buntansha)	グラビアローレント東北大学, 金属材料研究所, 日本学術振興会外国クルツエリザベス東北大学, 金属材料研究所, 日本学術振興会外国花田貴東北大学, 金属材料研究所, 助手 (80211481) 牧野久雄東北大学, 金属材料研究所, 助手 (40302210)
Keywords	量子ドット / ワイドギャップ半導体 / 量子構造 / プラズマ援用MBE / ZnO / ZnSe / CdSe / GaN
Research Abstract	821811 本年度の主要な研究成果は、(1)高品質ZnOの薄膜の形成、(2)ZnMgO/ZnO/MgO量子井戸構造の構築、(3)高品質・超平坦なZnSe膜の形成とその上でのCdSeドットの自己組織化形成である。 (1) 高品質ZnOの薄膜の形成:高品質膜形成のために種々の基板材料を探索した。従来はサファイヤ基板が用いられていたが、ヘテロ界面層による残留歪み、欠陥形成などのため改善の余地があった。そこで、スピネル基板、CaF2基板、GaN基板を用いて、界面バッファー層の検討、基板表面処理、成長条件の検討を行ってそれぞれの基板に対して最適成長条件を求めた。成長したZnO膜に対して結晶工学的評価により、GaN基板上に形成したZnO膜が最も高品質であることがわかった。 (2) ZnMgO/ZnO/ZnMgO量子井戸構造の構築とその光学特性探索:Mgを酸化雰囲気中で蒸発するための特別な蒸発源を開発し、ZnMgO膜の形成を可能にした。Mg濃度20%程度までは良質の結晶性を保ちつつ膜形成が可能になった。ZnMgO/ZnO/ZnMgO単一量子井戸構造を形成し、その構造をX線回折とイオンビーム散乱法等で評価し、その光学特性をカソードルミネッセンス法で評価した。これらの評価により、良質のへテロ構造、量子構造が形成されていることが明らかになった。 (3) 高品質・超平坦なZnSe膜の形成とその上でのCdSeドットの自己組織化形成:従来のZnSe膜の表面粗さは1nm程度であった。成長条件の最適化(高温成長の採用)、2段階成長法の開発により、表面粗さが0.3nmと原子レベルの平坦性が得られ、またPL特性の大幅な改善も見られた。この上での高品質CdSe量子ドットの自己組織化形成に成功した。

Research Products

(31 results)

All Other

All Publications (31 results)

[Publications] H.D.Jung: "Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy ekectron diffration" J.Cryst.Growth. 184/185. 223-227 (1998)
[Publications] E.Kurtz: "Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface" J.Cryst.Growth. 184/185. 242-247 (1998)
[Publications] K.Arai: "Photoluminescence and cathodoluminescence studies of ZnSe quantum structures enbedded in ZnS" J.Cryst.Growth. 184/185. 254-258 (1998)
[Publications] Y.F.Chen: "ZnO quantum pyramids grown on c-plane sapphire by plama-assisted molecular beam epitaxy" J.Cryst.Growth. 184/185. 269-273 (1998)
[Publications] P.Tomasini: "Luminescence properties of ZnSe/ZnS(h11)A low dimensional structures" J.Cryst.Growth. 184/185. 343-346 (1998)
[Publications] N.Kumagai: "Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy" J.Cryst.Growth. 184/185. 505-509 (1998)
[Publications] D.M.Bagnall: "Room temperature excitonic stmuated cmission from zinc oxide epilayers grown by plasma-assisted MBE" J.Cryst.Growth. 184/185. 605-609 (1998)
[Publications] F.Lu: "Interfacial properties of ZnSe/GaAs heterovalent interfaces" J.Cryst.Growth. 184/185. 183-187 (1998)
[Publications] H.D.Jung: "Nitridation processes on GaAs(001) surfaces: Optical,structural,and chemical analysis" J.Appl.Phys.83. 5497-5503 (1998)
[Publications] P.Tomasini: "Orientation dependence of strained ZnSe/ZnS(h11)single quantum well luminescence" J.Appl.Phys.83. 4272-4278 (1998)
[Publications] クルツエリザベス: "II-VI族半導体量子ドット" 応用物理. 67. 802-806 (1998)
[Publications] H.Totsuka: "The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)" Appl.Surf.Sci.130-132. 742-746 (1998)
[Publications] E.Kurtz: "Properties of self-organized CdSe quantum dots on an atomically flat(111)A ZnSe suface" Appl.Surf.Sci.130-132. 755-759 (1998)
[Publications] P.Tomasini: "Localization and thermal escape of excitons in ultrahin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum stabs" J.Appl.Phys.83. 6028-6033 (1998)
[Publications] Y.F.Chen: "Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterzation" J.Appl.Phys.84. 3912-3918 (1998)
[Publications] M.W.Cho: "MBE growth and device characterization of Be-based materials for application to blue-green laser diodes" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 22-25 (1998)
[Publications] Z.Q.Zhu: "Characterization of compensating centers in nitrogen-doped ZnSe" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 69-73 (1998)
[Publications] S.Saeki: "Electrical properties and growth optimization of p-BeTe epilayer as a contact of II-VI blue-green laser" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 218-221 (1998)
[Publications] K.Godo: "Optical properties of ZnSe/ZnMgBeSe QWs" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 234-236 (1998)
[Publications] J.H.Chang: "Molecullar beam eptoxy growth of (ZnMg)(SeTe) for the application of green light emitters" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 496-499 (1998)
[Publications] H.J.Ko: "Electron beam exposure and epitaxy of ZnO films on (111)CaF_2" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 500-503 (1998)
[Publications] D.M.Bagnall: "ZnO excitonic Lasers-the future of short wavelength emission?" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 536-539 (1998)
[Publications] S.Q.Wang: "Compensating levels in p-type ZnSe:N studied by optical deep-level transient spectroscopy" Phys.Rev.B. 10502-10509 (1998)
[Publications] J.L.Zhu: "Spin oscillation and its reduction in a quantum dot" Phys.Rev.B. 13755-13761 (1998)
[Publications] J.L.Zhu: "Binding and overlap function of incompletely confined excitons in quantum dots" J.Phys.: Condens.Matter. 10. 583-587 (1998)
[Publications] J.L.Zhu: "Exact spectra and spin oscillations for two electrons in quantum dots" Phys.Lett.A. 246. 157-162 (1998)
[Publications] D.M.Bagnall: "High temperature excitonic stimulated emission from ZnO epitaxial layers" Appl.Phys.Lett.73. 1038-1040 (1998)
[Publications] M.W.Cho: "Growth and characterization of beryllium-based II-VI compounds" J.Appl.Phys.85. 512-517 (1999)
[Publications] K.W.Koh: "Growth of ZnSe on misoriented GaAs(110) surface by molecular beam epitaxy" J.Cryst.Growth. 184/185. 46-50 (1998)
[Publications] J.L.Zhu: "Binding and overlap function of incompletely confined excitons in quantum dots" J.Phys.: Condens.Matter. 10. 583-587 (1998)
[Publications] Y.Xia: "Surfaces of undoped and boron doped polycrstalline diamond films influcnced by hydrogen ions" Proc.of the Fifth China-Japan Symposium on Thin Films. 106-110 (1998)

1998 Fiscal Year Annual Research Report

ワイドギャップ半導体ナノ量子ドットの構築

Principal Investigator

八百 隆文 東北大学, 金属材料研究所, 教授 (60230182)

Research Products

[Publications] H.D.Jung: "Investigation of the surfactant effect of Sn in ZnSe by reflectance difference spectroscopy and reflection high-energy ekectron diffration" J.Cryst.Growth. 184/185. 223-227 (1998)

[Publications] E.Kurtz: "Self-organized CdSe/ZnSe quantum dots on a ZnSe(111)A surface" J.Cryst.Growth. 184/185. 242-247 (1998)

[Publications] K.Arai: "Photoluminescence and cathodoluminescence studies of ZnSe quantum structures enbedded in ZnS" J.Cryst.Growth. 184/185. 254-258 (1998)

[Publications] Y.F.Chen: "ZnO quantum pyramids grown on c-plane sapphire by plama-assisted molecular beam epitaxy" J.Cryst.Growth. 184/185. 269-273 (1998)

[Publications] P.Tomasini: "Luminescence properties of ZnSe/ZnS(h11)A low dimensional structures" J.Cryst.Growth. 184/185. 343-346 (1998)

[Publications] N.Kumagai: "Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy" J.Cryst.Growth. 184/185. 505-509 (1998)

[Publications] D.M.Bagnall: "Room temperature excitonic stmuated cmission from zinc oxide epilayers grown by plasma-assisted MBE" J.Cryst.Growth. 184/185. 605-609 (1998)

[Publications] F.Lu: "Interfacial properties of ZnSe/GaAs heterovalent interfaces" J.Cryst.Growth. 184/185. 183-187 (1998)

[Publications] H.D.Jung: "Nitridation processes on GaAs(001) surfaces: Optical,structural,and chemical analysis" J.Appl.Phys.83. 5497-5503 (1998)

[Publications] P.Tomasini: "Orientation dependence of strained ZnSe/ZnS(h11)single quantum well luminescence" J.Appl.Phys.83. 4272-4278 (1998)

[Publications] クルツ エリザベス: "II-VI族半導体量子ドット" 応用物理. 67. 802-806 (1998)

[Publications] H.Totsuka: "The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs(100)" Appl.Surf.Sci.130-132. 742-746 (1998)

[Publications] E.Kurtz: "Properties of self-organized CdSe quantum dots on an atomically flat(111)A ZnSe suface" Appl.Surf.Sci.130-132. 755-759 (1998)

[Publications] P.Tomasini: "Localization and thermal escape of excitons in ultrahin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum stabs" J.Appl.Phys.83. 6028-6033 (1998)

[Publications] Y.F.Chen: "Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterzation" J.Appl.Phys.84. 3912-3918 (1998)

[Publications] M.W.Cho: "MBE growth and device characterization of Be-based materials for application to blue-green laser diodes" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 22-25 (1998)

[Publications] Z.Q.Zhu: "Characterization of compensating centers in nitrogen-doped ZnSe" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 69-73 (1998)

[Publications] S.Saeki: "Electrical properties and growth optimization of p-BeTe epilayer as a contact of II-VI blue-green laser" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 218-221 (1998)

[Publications] K.Godo: "Optical properties of ZnSe/ZnMgBeSe QWs" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 234-236 (1998)

[Publications] J.H.Chang: "Molecullar beam eptoxy growth of (ZnMg)(SeTe) for the application of green light emitters" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 496-499 (1998)

[Publications] H.J.Ko: "Electron beam exposure and epitaxy of ZnO films on (111)CaF_2" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 500-503 (1998)

[Publications] D.M.Bagnall: "ZnO excitonic Lasers-the future of short wavelength emission?" Proc.of the 2th Int.Symp.on Blue Laser and Light Emitting Diodes. 536-539 (1998)

[Publications] S.Q.Wang: "Compensating levels in p-type ZnSe:N studied by optical deep-level transient spectroscopy" Phys.Rev.B. 10502-10509 (1998)

[Publications] J.L.Zhu: "Spin oscillation and its reduction in a quantum dot" Phys.Rev.B. 13755-13761 (1998)

[Publications] J.L.Zhu: "Binding and overlap function of incompletely confined excitons in quantum dots" J.Phys.: Condens.Matter. 10. 583-587 (1998)

[Publications] J.L.Zhu: "Exact spectra and spin oscillations for two electrons in quantum dots" Phys.Lett.A. 246. 157-162 (1998)

[Publications] D.M.Bagnall: "High temperature excitonic stimulated emission from ZnO epitaxial layers" Appl.Phys.Lett.73. 1038-1040 (1998)

[Publications] M.W.Cho: "Growth and characterization of beryllium-based II-VI compounds" J.Appl.Phys.85. 512-517 (1999)

[Publications] K.W.Koh: "Growth of ZnSe on misoriented GaAs(110) surface by molecular beam epitaxy" J.Cryst.Growth. 184/185. 46-50 (1998)

[Publications] J.L.Zhu: "Binding and overlap function of incompletely confined excitons in quantum dots" J.Phys.: Condens.Matter. 10. 583-587 (1998)

[Publications] Y.Xia: "Surfaces of undoped and boron doped polycrstalline diamond films influcnced by hydrogen ions" Proc.of the Fifth China-Japan Symposium on Thin Films. 106-110 (1998)

八百隆文東北大学, 金属材料研究所, 教授 (60230182)

[Publications] クルツエリザベス: "II-VI族半導体量子ドット" 応用物理. 67. 802-806 (1998)