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2000 Fiscal Year Final Research Report Summary

ガリウム・ヒ素化合物半導体用の超新機能電極材料の研究

Research Project

Project/Area Number 10305051
Research Category

Grant-in-Aid for Scientific Research (A).

Allocation TypeSingle-year Grants
Section一般
Research Field Structural/Functional materials
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

MURAKAMI Mosanori  Kyoto Univ. Professor, 工学研究科, 教授 (70229970)

Co-Investigator(Kenkyū-buntansha) MORI Hidetsugu  Kyoto Univ. Research Associate, 工学研究科, 助手 (60283644)
MATSUBARA Eiichiro  Kyoto Univ. Associate Professor, 工学研究科, 助教授 (90173864)
KOIDE Yasuo  Kyoto Univ. Associate Professor, 工学研究科, 助教授 (70195650)
MORIYAMA Miki  Kyoto Univ. Research Associate, 工学研究科, 助手 (70303857)
Project Period (FY) 1998 – 2000
KeywordsGaAs / Ohmic contact / NiInGe / InGaAs / Interface / Contact resistance / Electrode / Microstructure
Research Abstract

NiInGe Ohmic contact materials which are attractive to use in the future GaAs devices were developed in our laboratories. Although the NiInGe contacts provided low contact resistances of around 0.3 Ω-mm and excellent thermal stability, further reduction of the contact resistance (Rc) of the NiInGe contacts was mandatory to apply these contacts in the sub-micron devices. In this research project, the microstructural parameters which influence the Rc values were investigated by correlating the Rc values with the microstructure at the interface between the contact materials and GaAs. The Rc values of the NiInGe contacts were found to depend strongly on the volume fraction and the In concentration (x) of the In_xGa_<1-x>As compound semiconductor layers which were formed at the metal/GaAs interface. Both the volume fraction and the In concentration of the In_xGa_<1-x>As layers were found to depend on the thickness of the In layer used in the NiInGe contact and the annealing temperature to form the Ohmic contacts. The Rc value of 0.18 Ω-mm was obtained for the Ni(18nm)/In(13nm)/Ge(30nm) contact after annealing at temperature of around 650 ℃ for 5 s where a slash "/" indicates the deposition sequence.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Y.Tsunoda and M.Murakami: "Microstructural analysis of NiInGe Ohmic contacts for n-type GaAs"J.Electronic Materials. (印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Arai,H.Sueyoshi,Y.Koide,M.Moriyama,and M.Murakami: "Development of Pt-based ohmic contact materials for p-type GaN."Jounal of Applied Physics. Vol.89,No.5. 2826-2831 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Koide,T.Arai,and M.Murakami: "Electrical properties and reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic contact materials for p-GaN"Proceedings of International workshop on Nitrid Semiconductors. IPAP Conf.Ser.1. 821-824 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ogura and M.Murakami: "Development of In_xGa_<1-x>As-Based Ohmic Contacts for p-Type GaAs by Radio-Frequency Sputtering"Jounal of Electronic Materials. Vol.27. L64-L65 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Murakami and Y.Koide: "Ohmic contacts for Compound Semiconductors."Critical Reviews in Solid State and Materials Sciences. Vol.23,No.1. 1-60 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ogura and M.Murakami: "Application of In_xGa_<1-x>As-Based Ohmic Contacts to p-Type GaAs."The Proceedings of Third Pacific Rim International Conference on Advanced Materials and Processing. Vol.II. 2531-2534 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 小出康夫,村上正紀: "なぜショットキーバリアは形成されるか"応用物理. 第67巻、第2号. 149-155 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Ogura and M.Murakami: "Application of In_xGa_<1-x>As-Based Ohmic Contacts to p-Type GaAs."The Proceedings of Third Pacific Rim International Conference on Advanced Materials and Processing. II. 2531 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Ogura and M.Murakami: "Development of In_xGa_<1-x>As-Based Ohmic Contacts for p-Type GaAs by Radio-Frequency Sputtering."J.Electronic Materials. vol.27. L64 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Koide and M.Murakami: "Why a Schottky barrie is formed ?"OYO-BUTSURI. vol.67, No.2. 149 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Murakami and Y.Koide: "Ohmic Contacts for Compound Semiconductors"Critical Reviews in Solid State and Materials Sciences, (CRC Press). vol.23, No.1. 1-60 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Tsunoda, M.Ogura, and M.Murakami: "Microstructural analysis of NiInGe Ohmic contacts for n-type GaAs."J.Electronic Materials. (in process). (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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