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1999 Fiscal Year Final Research Report Summary

Growth Dynamics and Properties of Compound Semiconductor Layers Prepared by Low Temperature Molecular Beam Epitaxy

Research Project

Project/Area Number 10450002
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

OHNO Hideo  Research Institute of Electrical Communication, Tohoku University, Professor, 電気通信研究所, 教授 (00152215)

Co-Investigator(Kenkyū-buntansha) OHNO Yuzo  Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (00282012)
MATSUKURA Fumihiro  Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (50261574)
Project Period (FY) 1998 – 1999
KeywordsMolecular Beam Epitaxy (MBE) / Low-Temperature MBE / Ferromagnetic Semiconductor / Reflection High Energy Electron Diffraction (RHEED) / GaMnAs / GaMnSb / Monte-Carlo Simulation / InMnAs
Research Abstract

III-V semiconductors and/or diluted magnetic semiconductors, and their nanostructures were grown by low-temperature (LT-) molecular beam epitaxy (MBE). The growth dynamics and structures have been investigated by reflection high energy electron diffraction (RHEED), and atomic force (AFM) and/or magnetic force (MFM) microscopy. Their optical, magnetic, and transport properties of the samples were also characterized.
The summary of the research results are :
1. It has been observed that the oscillation of the RHEED intensity recovers as the growth temperature was much lowered (〜300℃). The experimental results of the temperature dependence were successfully represented by Monte-Carlo simulation calculation based on the model which treats the excess arsenic as self-surfactant.
2. A new diluted magnetic semiconductor (Ga,Mn)Sb with a few percent Mn concentration has been successfully grown by MBE. The dependence of their properties on the growth temperature was investigated by AFM/MFM, magneti … More zation and magnetotransport measurements. By AFM and MFM observations, it was found that MnSb clusters were formed on the surface. When the growth temperature is as high as 〜560℃, the sample is ferromagnetic at room temperature, and the MnSb clusters dominate the whole magnetization properties. On the other hand, the magnetization and magnetotransport properties of the samples grown at LT exhibit another magnetic phase below 20 K, indicating the existence of (Ga,Mn)As which becomes ferromagnetic at lower temperatures (〜20 K).
3. It has been demonstrated that size uniformity of the self-assembled InMnAs quantum dots grown on (211)B GaAs substrate can be improved by introducing Mn, indicating that Mn plays a role of surfactant.
4. All-semiconductor ferromagnet (GaMn)As/nonmagnet (Al,Ga)As/ferromagnet (Ga,Mn)As trilayer structures were fabricated by LT-MBE, and their magnetic and transport properties were characterized. It has been demonstrated that the magnetic coupling between two ferromagnetic layers can be controlled by tuning the thickness and/or the barrier hight of the non-magnetic layer. Furthermore, we have observed the giant magnetoresistance effect in this system for the first time. Less

  • Research Products

    (38 results)

All Other

All Publications (38 results)

  • [Publications] F.Matsukura: "Molecular beam epitaxy of GaSb with high concentration of Mn"Applied Surface Science. (印刷中). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Omiya: "Magnetotransport properties of(Ga,Mn)As investigated at low temperature and high magnetic field"Physica E. (印刷中). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] E.Abe: "Molecular Beam Epitaxy of III-V Diluted Magnetic Semiconductor(Ga,Mn)Sb"Physica E. (印刷中). (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "Surfactant effect of Mn on the formation of self-organized In As nanostructures"Journal of Crystal Growth. 208. 799-803 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Ferromagnetic III-V semiconductors and their heterostructures"Proceedings of the 24th International Conference on the Physics of Semiconductors(Jerusalem, Israel, August 2-7, 1998, Ed.D.Gershoni, World Scientific, Singapore). 139-146 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Electrical spin injection in a ferromagnetic semiconductor heterostructures"Nature. 402. 790-792 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Properties of ferromagnetic III-V semiconductors"Journal of Magnetism and Magnetic Materials. 200. 110-129 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Properties of(Ga,MN)As and their dependence on molecular beam growth conditions"Inst Phys/Conf. Ser. No.162 : Chapter 10, Paper presented at 25th Int. Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998. 547-552 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yasuda: "Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth"Applied Physics Letters. 72. 3275-3277 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "III-V based ferromagnetic semiconductors"Journal of Magnetics Society of Japan. 23. 88-92 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F.Matsukura: "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures"Journal of Magnetics Society of Japan. 23. 99-101 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Spin-dependent tunneling and properties of ferromagnetic(Ga,Mn)As"Journal of Applied Physics. 85. 4277-4282 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Low-temperature molecular beam epitaxial growth of GaAs and(Ga,Mn)As"Journal of Crystal Growth. 201-202. 679-683 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and(311)B Substrates"Journal of Crystal Growth. 201-202. 684-688 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Superlattice and multilayer structures based on ferromagnetic semiconductor(Ga,Mn)As"Physica B. 249-251. 809-813 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Shen: "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure : A reflection high-energy electron diffraction study"Applied Surface Science. 130-132. 382-386 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.P.Guo: "Self-organized(In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates"Applied Surface Science. 130-132. 797-802 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ohno: "Spontaneous splitting of ferromagnetic(Ga,Mn)As observed by resonant tunneling spectroscopy"Applied Physics Letters. 73. 363-365 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Akiba: "Interlayer exchange in(Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures"Applied Physics Letters. 73. 2122-2124 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F. Matsukura: "Molecular beam epitaxy of GaSb with high concentration of Mn"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Omiya: "Magnetotransport properties of (Ga,Ma)As investigated at low temperature and high magnetic field"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] E. Abe: "Molecular Beam Epitaxy of III-V Diluted Magnetic Semiconductor (Ga,Mn)Sb"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P. Guo: "Surfactant effect o Mn on the formation of self-organized InAs nanostructures"Journal of Crystal Growth. vol. 208. 799-803 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ohno: "Ferromagnetic III-V semiconductors and their heterostructures"Proc. 24th Int. Conf. Physics of Semiconductors (Jerusalem, Israel, August 1998, Ed. D. Gershoni). 139-146 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Ohno: "Electrical spin injection in a ferromagnetic semiconductor heterostructures"Nature. vol. 402. 790-792 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ohno: "Properties of ferromagnetic III-IV semiconductors"Journal of Magnetism and Magnetic Materials. vol. 200. 110-129 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Matsukura: "Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions"Inst Phys/Conf. Ser. No. 162 Chapter 10, Paper presented at 25th Int. Symp. Compound Semiconductors (Nara, Japan, October 1998). 547-552 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Yasuda: "Mote Carlo simulation of reentrant reflection high energy electron diffraction intensity oscillation observed during low temperature GaAs growth"Applied Physics Letters. vol. 72. 3275-3277 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ohno: "III-V based ferromagnetic semiconductors"Journal of Magnetics Society of Japan. vol. 23. 88-92 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F. Matsukura: "Magnetotransport properties of (GaMn)As/GaAs/(Ga,Mn)As trilayer structures"Journal of Magnetics Society of Japan. vol. 23. 99-101 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ohno: "Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As"Journal of Applied Physics. vol. 85. 4277-4282 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Shen: "Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As"Journal of Crystal Growth. vols. 201-202. 679-683 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P. Guo: "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrate"Journal of Crystal Growth. vols. 201-202. 684-688 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Shen: "Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As"Physica B. vols 249-251. 809-813 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Shen: "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure : A reflection high-energy diffraction study"Applied Surface Science. vols. 130-132. 382-386 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.P. Guo: "Self-organized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrate"Applied Surface Science. vols. 130-132. 797-802 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ohno: "Spontaneous splitting of ferromagnetic (Ga,Mn)As observed by resonant tunneling spectroscopy"Applied Physics Letters. vol. 73. 363-365 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Akiba: "Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nanomagnet/ferromagnet trilayer structures"Applied Physics Letters. vol. 73. 2122-2124 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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