• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2000 Fiscal Year Final Research Report Summary

Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic Structures

Research Project

Project/Area Number 10450020
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionMusashi Institute of Technology

Principal Investigator

HATTORI Takeo  Musashi Institute of Technology, Department of Electrical & Electronic Engineering, Professor, 工学部, 教授 (10061516)

Co-Investigator(Kenkyū-buntansha) KAZUYUKI Hirose  Institute of Space & Astronautical Science, Research Division for Space Applications, Associate Professor, 衛星応用工学研究系, 助教授 (00280553)
HIROSHI Nohira  Musashi Institute of Technology, Department of Electrical & Electronic Engineering, Associate Professor, 工学部, 助教授 (30241110)
Project Period (FY) 1998 – 2000
Keywordssilicon oxide / surface roughness / interface states / interface dipole / first principle molecular orbital calculation / interface structure / elastic scattering / oxidation mechanism
Research Abstract

(1) Below 900℃ the oxidation-induced-stress causes the increase in surface roughness. Furthermore, the surface roughness of oxide formed on Si (100) oscillates with period in thickness of 0.19 nm in accordance with periodic changes in the interface structures. (2) The interface roughness at SiO_2/Si (100) interface produces the interface states. In addition, the interface states correlated with SiO_2/Si (111) interface structures were detected. (3) The energy difference between the bonding states in the valence-band and the O 2s core-level is larger than the corresponding difference for the bulk SiO_2 by about 0.2 eV.According to a first-principle molecular orbital calculations this difference can be attributed to a narrow intertetrahedral bond angle of about 135 degrees near the SiO_2/Si interfaces. Furthermore, the valence-band offset differs by about 0.17 eV between the two types of atomic structures at the interface defined by the Si atoms in intermediate-oxidation states. Accordin … More g to a first-principle molecular orbital calculations this difference can be attributed to smaller interface dipole at the interface which is characterized as containing a maximum amount of Si atoms in 3+ oxidation states (Si^<3+>) than that at the interface which is characterized as containing a maximum amount of Si atoms in 1+ oxidation states (Si^<1+>) through the depolarization effect. (4) It was found from the Monte Carlo calculation of path of elastically and inelastically scattered Si 2p photoelectrons in silicon oxide for the simulation of oxidation-induced changes in photoelectron diffraction patterns that the total elastic scattering cross-section and the inelastic scattering cross-section are 1.54×10^<-20> and 1.26×10^<-20> m^2, respectively. (5) At the same oxidation condition the oxidation rate changes periodically with the progress of oxidation and decreases significantly at specific interface structures. In other words, the oxidation rate is influenced by the SiO_2/Si interface structures. Less

  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] K.Hirose,H.Nohira,T.Koike,K.Sakano,T.Hattori: "Structural transition layer at SiO_2/Si Interfaces"Physical Review. B59. 5617-5621 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Teramoto,N.Watanabe,M.Fujimura,H.Nohira,T.Hattori: "Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100)"Applied Surface Science. 159/160. 67-71 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Fujimura,K.Inoue,N.Nohira,T.Hattori: "Atomic-scale surface morphology of ultrathin thermal oxide formed on Si(100) surface"Applied Surface Science. 162/163. 62-68 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Nohira,K.Hirose,K.Takahashi,T.Hattori: "Elastic scattering of Si 2p photo- electrons in ultrathin silicon oxides"Applied Surface Science. 162/163. 304-308 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Watanabe,Y.Teramoto,A.Omura,H.Nohira,T.Hattori: "Detection of interface states correlated with SiO_2/Si(111) interfaces structures"Applied Surface Science. 166. 460-464 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Takahashi,H.Nohira,T.Nakamura,T.Ohmi,T.Hattori: "Influence of Interface Structure on Oxidation Rate of Silicon"Japanese Journal of Applied Physics. 40. L68-L70 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hattori: "Surface, interface and valence band structures of ultra-thin silicon oxides"Appl.Surf.Sci. 130/132. 156-164 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hirose, H.Nohira, T.Koike, K.Sakano, T.Hattori: "Structural transition layer at SiO_2/Si interfaces"Phys.Rev.. B59-8. 5617-5621 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hattori, K.Takahashi, H.Nohira: "Energy loss of O 1s photoelectrons in compositional and structural transition layer at and near the SiO_2/Si interface"Solid State Phenomena. 65/66. 241-244 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hattori, K.Hirose, H.Nohira, K.Takahashi, T.Yagi: "Elastic scattering of Si 2p photoelectrons in silicon oxide"Appl.Surf.Sci. 144/145. 297-300 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hattori, K.Takahashi, H.Nohira: "Compositional and structural transition layer studied by the energy loss O 1s photoelectrons"Thin Solid Film. 343/344. 401-403 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hattori, K.Takahashi, H.Nohira: "The initial growth steps of ultrathin gate oxides"Microelectronic Engineering. 48. 17-24 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Teramoto, N.Watanabe, M.Fujimura, H.Nohira, T.Hattori: "Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si (100)"Appl.Surf.Sci. 159-160. 67-71 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Fujimura, K.Inoue, H.Nohira, T.Hattori: "Atomic-scale surface morphology of ultrathin thermal oxide formed on Si (100) surface"Appl.Surf.Sci.. 162/163. 62-68 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nohira, K.Hirose, K.Takahashi, T.Hattori: "Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides."Appl.Surf.Sci.. 162/163. 304-308 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hirose, H.Nohira, K.Sakano, T.Hattori: "Atomic structure of SiO_2 at SiO_2/Si interface"Appl.Surf.Sci.. 166. 455-459 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Watanabe, Y.Teramoto, A.Omura, H.Nohira, T.Hattori: "Detection of interface states correlated with SiO_2/Si (111) interfaces structures"Appl.Surf.Sci.. 168. 460-464 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Takahashi, H.Nohira, T.Nakamura, T.Ohmi, T.Hattori: "Influence of Interface Structure on Oxidation Rate of Silicon"Jpn.J.Appl.Phys. 40. L68-L70 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2002-03-26  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi