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1999 Fiscal Year Final Research Report Summary

Fabrication of Quantum Wires Based on Selective Doping Mechanism and Its Application to Functional Devices Using Quantum Parallelism

Research Project

Project/Area Number 10450110
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

YOH Kanji  Hokkaido Univ., RCIQE, Pro., 量子界面エレクトロニクス研究センター, 教授 (60220539)

Co-Investigator(Kenkyū-buntansha) AMEMIYA Yoshihito  Hokkaido Univ., Grad.School of Eng., Pro., 大学院・工学研究科, 教授 (80250489)
Project Period (FY) 1998 – 1999
KeywordsQuantum Wire / Self-assemble / Amphoteric dopants / Selective doping / Molecular Beam Epitaxy / Electrostatic Force Microscope / Quantum Computing / Single Electron Circuits
Research Abstract

We have aimed at establishing our original fabrication methods of quantum wires and further developing the method to apply to the realization of the "quantum devices". We have investigated the fabrication and the electronic characterization of the quantum wires grown on facets on (311)A GaAs substrates in addition to the (100) GaAs substrates. Cryogenic temperature measurement on quantum wire transistors showed clear quantum wire characteristics. The major results are described below. (I) We have established a new fabrication methods of device quality quantum wires based on selective doping mechanism on patterned sustrates. Unlike the advanced nano-lithography technique such as electron beam lithography or scanning probe method, the present method was demonstrated to be able to process wafer scale fine structures in one step of growth. The obtained quantum wires were shown to maintain high quality along mm long structurally by Electrostatic Force Microscopy. (ii) Single electron oscill … More tion was observed near pinch-off conditions at 2K. Detailed measurements changing temperature and the external magnetic fields relealed that the potential ondulation along the quantum wire resulted in series of isolated potential pockets of 6meV or so deep. Present results shows degree of flatness of the confinement potential along the mm long quantum wires based on the present method. In addition, we have observed clear conductance oscillations which are clear evidence of 1-dimensional conduction at 77K and 4K. This result strongly indicates that one-dimensional conduction is achieved at up to 77K or more without mode mixing. (iii) Transistor characteristics of the "single wire" transistor were also investigated. The I .5μm gate transistor showed the transconductance of 580mS/mm and 650mS/mm at 300K and 77K respectively. These results belong to high end of the modulation doped transistors based on GaAs/AlGaAs. This result indicates successful fabrication of high quality one-dimensional electron systems. It also revealed extremely small gate leakage current of the order of tens of picoamperes. Together with this low leakage characteristics, the present quantum wire approach was shown to have high potentail of integrated quantum qire transistor circuits based on classical and quantum funcional principles. Less

  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Kanji Yoh: "Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy"J.Electronic Materials. 28. 457-465 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Crossover from Coulomb blockade to single electron memory mode in a d-dopedchannel GaAs split-gate transistor embedded with InAs dots in adjacent to the channel"The Pyhsics of Semiconductors (World Scientific). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Takabayashi: "Structural and transport characterization of AlGaAs/GaAs quantum wires formed by selective doping mechanism"Inst.Phys.Conf.Ser.. 162. 391-396 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy"J.Crystal Growth. 201/202. 1164-1167 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Resonant tunneling spectroscopy of InAs quantum dots buried GaAs"Physica B. 272. 24-27 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Single Electron Charging of InAs Quantum Dots Characterized by d-doped Channel Conductivity"Physica E. (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Conductance Spectroscopy of InAs Quantum dots Buried in GaAs"Physica E. (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Fabrication of GaAs Quantum Wires by Natural Selective Doping and Its Characterization by Electric Force Microscope"Journal of Vacuum Science and Technology. (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Michiharu Tabe: "Simulation of Visible Light Induced Effects in a Tunnel Juncyion Array for Photonic Device Applications"Jpn.J.Appl.Phys.. 38. 593-596 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takashi Morie: "Analogue LSI implimentation of self-learning neural networks"Computers and Electrical Engineering. 25. 339-355 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh: "Resonant tunneling through coupled InAs quantum dots"Physica B. 249-251. 243-246 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kanji Yoh, Toshiya Saitoh, Arata Tanimura, Ryuusuke Nakasaki and Hironobu Kazama: "Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy"J. Electronic Materials. vol.28, No.5. 457-465 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh and Sanshiro Shiina: "Crossover from Coulomb blockade to single electron memory mode in a d-dopedchannel GaAs split-gate transistor embedded with InAs dots in adjacent to the channel"The Physics of Semiconductors (World Scientific, 1999 ISBN : 98 1 -02-4030-9 (CD))..

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Takabayashi, Yoshiaki Kitasho, Hironobu Kazama and Kanji Yoh: "Structural and transport characterization of AlGaAS/GaAS quantum wires formed by selective doping mechanism"Inst. Phys. Conf. Ser.. No.162. 391-396 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh, Ryusuke Nakasaki and Shmgo Takabayashi: "Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy"J.Crystal Growth. 201/202. 1164-1167 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh and Yoshiyuki Kitasho: "Resonant tunneling spectroscopy of InAs quantum dots buried in GaAs"Physica B. vol.272. 24-27 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh Hironobu Kazama and Takaya Nakano: "Resonant tunneling through coupled InAs quantum dots"Physica B. vol.249-251. 243-246 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh and Hironobu Kazama: "Single Electron Charging of InAs Quantum Dots Characterized by d-doped Channel Conductivity"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanji Yoh and Hironobu Kazama: "Conductance Spectroscopy of InAs Quantum dots Buried in GaAs"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S .-W. Lee, K. Hirakawa, and Y. Shimada: "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures"Appl. Phys. Lett.. vol.75. 1428-1430 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Michiharu Tabe, Yoichi Terao, Ratno Nuryadi, Yasuhiko Ishikawa, Noboru Asahi and Yoshihito Amemiya: "Simulation of Visible Light Induced Effects in a Tunnel Juncyion Array for Photonic Device Applications"Jpn. J. App. Phys.. vol.38. 593-596 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takashi Morie, Kuniharu Uchimura and Yoshihito Amemiya: "Analogue LSI implimentation of self-learning neural networks"Computers and Eletctrical Engineering. 25. 339-355 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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