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2001 Fiscal Year Final Research Report Summary

Development of device structures with simultaneous optical and electronic confinement and microscopic transmission measurements on their lasing, absorption, and gain characteristics

Research Project

Project/Area Number 10450113
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

WATANABE Shuntaro  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Professor, 物性研究所, 教授 (50143540)

Co-Investigator(Kenkyū-buntansha) BABA Motoyoshi  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Technical Staff, 物性研究所, 教務職員 (60159077)
YOSHITA Masahiro  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Research Associate, 物性研究所, 助手 (30292759)
AKIYAMA Hidefumi  Institute for Solid State Physics, THE UNIVERSITY OF TOKYO, Associate Professor, 物性研究所, 助教授 (40251491)
Project Period (FY) 1998 – 2001
KeywordsQuantum confined structure / Waveguide / Semiconductor / Microscopy / Laser
Research Abstract

We develop novel device structures with simultaneous optical and electronic confinement such as quantum wire lasers, and study their lasing, absorption, and gain characteristics on the basis of our microscopic optical transmission measurement systems.
We first developed computation codes with the finite element methods for design and optimization of quantum-confined structures for electrons and photons. We also developed measurement systems for optically pumped lasing at various temperatures, top-view photoluminescence spectra and images, and transmission light from waveguides.
As for the cleaved-edge overgrown T-shaped quantum wire laser structures, we investigated the problem of interface roughness on (110) overgrowth surfaces, which limit the final quality of the structures, and resolved the problem by introducing a new growth interruption annealing method. We finally realized atomically flat interface without monolayer steps over several tens of micro-meters in lateral extent.
A single quantum wire laser, which is a combination of a single-mode 1-D quantum wire and a single-mode 1-D optical waveguide was fabricated. We observed its lasing for the first time in August 2001. The laser structure includes 2-D quantum wells and 3-D double-hetero-structures in the 1-D optical waveguide and a 2-D quantum well in a 2-D slab optical waveguide. In other words, it contains structures of 1D-electron-1D-photon together with 2D-electron- 1D-photon, 3D-electron-1D-photon, and 2D-electron- 2D-phbton. Furthermore, these structures all make lasing, so that we can compare lasing characteristics of all the structure simultaneously. In addition, we resolved absorption spectra of 1-D excitons and 1-D continuum states, and observed the Sommerfeld factor inherent to 1-D systems for the first time.

  • Research Products

    (53 results)

All Other

All Publications (53 results)

  • [Publications] M.Yoshita: "Formation of flat monolayer-step-free(110)GaAs surfaces by growth interruption annealing during cleaved-edge epitaxial overgrowth"Jpn. J. Appl. Phys. Part. 2 letters. 40. L252-L254 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Makino: "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl. Phys. Lett.. 78. 1979-1981 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well"Appl. Phys. Lett.. 78. 3448-3450 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Large terrace formation and modulated electronic states in (110) GaAs quantum wells"Phys. Rev. B. 63. 075305-1-9 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Transformation of GaAs (001)-(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates"J. Cryst. Growth.. 227/228. 62-66 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Tsujikawa: "Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE"Physica E. 7. 308-316 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Sasagawa: "量子井戸を吸収層と検出層に用いた波長選択性赤外ボロメータ素子の提案と特性解析"電子情報通信学会論文誌C. J83-C-No.6. 523-532 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 吉田正裕: "ソリッドイマージョンレンズを用いた顕微蛍光計測法"日本物理学会誌. 55. 772-778 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Morita: "Photolumunescenec of CdS : Mn2+ and Eu3+ nanoparticles dispersed in zirconia sol-gel films"J. of Luminescence. 87-89. 478-481 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sakaki: "10nm-scale edge-and step-quantum wires and related structures Progress in their desgn, epitaxial, and physics"Physica E. 4. 56-64 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Picosecond time-resolved cyclotron resonance in semiconductors"Appl. Phys. Lett.. 75(8). 1119-1121 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hanamaki: "Spontaneous emission alteration in In GaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures"Semicond. Sci. Technol.. 14. 797-803 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantume wells"Optical Review. 6. 257-260 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi: "Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy"Phys. Stat. Sol(b). 216. 237-240 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsusue: "Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure : Suppression of phase relaxation and a deep quantum beat"Jpn. J. Appl. Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst. Phys. Conf. Ser. No 162, Compound Semiconductors 1998, edited by H. Sakaki, J. C. Woo, N. Yokoyama, and Y. Hirayama, (LOP publishing, Bristol, 1999). 143-148 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Watanabe: "Microscopy of electric states contributing to lasing in ridge quantum-wire"Appl. Phys. Lett.. 75. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Koyama: "High collection efficiency in fluorescence microscopy with a solid immersion lens"Appl. Phys. Lett.. 75. 1667-1669 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE"Transactions of the Materials Research Society of Japan. 24[1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J. Crystal Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Baba: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy"J. Appl. Phys.. 85. 6923-6925 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Someya: "Shape analysis of wave functions in T-shaped quantum wires by means of magneto-photoluminescence spectroscopy"Soli State Communications. 108. 923-927 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.B.Nordstrom: "Excitonic dynamical Franz-Keldysh effect"Phys. Rev. Lett.. 81. 457-460 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells"Appl. Phys. Lett.. 73. 2965-2967 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures"Appl. Phys. Lett.. 73. 635-637 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl. Phys.. 73. 511-513 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Akiyama: "One-dimensional excitons in GaAs quantum wires"J. Phys. Condensed Matter. 10. 3095-3139 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Micro-photoluminescence characterization of cleaved edge overgrowth T-shaped InGaAs quantum wires"J. Appl. Phys.. 83. 3777-3783 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption line width in a GaAs quantum well"Appl. Phys. Lett.. 78(22). 3448-3450 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Makino: "Temperature dependence of near, ultra violet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells"Appl. Phys. Lett.. 78(14). 1979-1981 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Formation of flat monolayer-step-free (110) GaAs surfaces by growth interruption overgrowth"Jpn. J. Appl. Phys. part2. 40. L252-L254 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Large terrace formation and modulated electronic states in (110) GaAs quantum wells"Phys. Rev. B. 63. 075305-1-9 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Tsujikawa: "Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE"Physica E. 7. 308-316 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Morita: "Photoluminescence of CdS : Mn2+ and Eu3+ nanoparticles dispersed in zirconia; sol-gel films"J. of Luminescence. 87-89. 478-481 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Sakaki: "10 nm scale edge and step-quantum wires and related structures: Progress in their desgn, epitaxial synthesis and physics"Physica E. 456-64. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Kono: "Picosecond time-resolved cyclotron resonance in semiconductors"Appl. Phys. Lett.. 75(8). 1119-1121 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Hanamaki: "Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures"Semicond. Sci. Technol.. 14. 797-803 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantume wells"Optical Review. 6. 257-260 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Yaguchi: "Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy"Phys. Stat. Sol (b). 216. 237-240 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Matsusue: "Coherent dynamics of excitons in an island-inserted GaAs/AlAs quantum well structure: Suppression of phase relaxation and a jeep quantum beat"Jpn. J. Appl. Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst. Phys. Conf. Ser. No 162, Compound Semiconductors 1998, edited by H. Sasaki, J. C. Woo, N. Yokoyama, and Y. Hirayama, (IOP publishing, Bristol, 1999). 143-148 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Watanabe: "Microscopy of electric states contributing to lasing in ridge quantum-wire"Appl. Phys. Lett.. 75. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Koyama: "High collection efficiency in fluorescence microscopy with a solid immersion lens"Appl. Phys. Lett.. 75. 1667-1669 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Koshiba: "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE"Transactions of the Materials Research Society of Japan. 24 [1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Koshiba: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J. Crystal Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Baba: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy"J. Appl. Phys.. 85. 6923-6925 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Someya: "Shape analysis of wave functions in T-shaped quantum wires by means of magnet-photoluminescence spectroscopy"Solid State Communications. 108. 923-927 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. B. Nordstrom: "Excitonic dynamical Franz-Keldysh effect"Phys. Rev. Lett. 81. 457-60 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells"Appl. Phys. Lett.. 73. 2965-2967 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures"Appl. Phys. Lett.. 73. 635-637 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl. Phys. Lett.. 73. 511-513 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Akiyama: "One-dimensional excitons in GaAs quantum wires"J. Phys. Condensed Matter. 10. 3095-3139 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Yoshita: "Micro-photoluminescence characterization of cleaved edge overgrowth T-shaped InGaAs quantum wires"J. Appl. Phys.. 83. 3777-83 (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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