1999 Fiscal Year Final Research Report Summary
Fabrication of high-quality diamond thin films by employing Xe-added MPCVD for diamond MISFET applications
| Project/Area Number |
10450124
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MAKI Tetsuro Graduate School of Engineering Science, Osaka University, Research Associate, 基礎工学研究科, 助手 (80273605)
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| Co-Investigator(Kenkyū-buntansha) |
KOBAYASHI Takeshi Professor Osaka University, 基礎工学研究科, 教授 (80153617)
FUJII Tatsuhiko Assistant Professor Osaka University, 基礎工学研究科, 講師 (40238530)
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| Project Period (FY) |
1998 – 1999
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| Keywords | diamond thin film / CVD / Xe-addition effects / MISFET / fluoride / XPS / band bending / plasma damage |
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| Research Abstract |
1. In order to obtain diamond thin films of high quality and favorable electronic properties, we have examined the role of Xe addition to the microwave plasma-assisted {CHィイD24ィエD2+HィイD22ィエD2} chemical vapor deposition (CVD). for diamond thin films growth. To make clear effects of Xe addition, we compared the results with those of Ar addition. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1 %-Xe), without degrdation of the crystallinity, and in the marked improvement in the transconductance of diamond metal-insulator-semiconductor transistors (MISFETs). Based on the results of the plasma emission spectra, Raman shift and microwave plasma impedance measurements, the prominent effects of Xe addition were attributed to its lower excitation energy, which reduces plasma temperature and it is sufficient for the dissociation of atomic hydrogen and CHィイD23ィエD2 (precursors for diamond crystallization) but not CHィイD22ィエD2 radicals.
2. Diamond thin film surfaces after deposition of fluoride and nitride have been characterized by X-ray photoelectron spectroscopy for probing the chemical bonding. Considerable shift to higher energy side in the peaks of C 1s level was observed in the sample deposited CaFィイD22ィエD2 at 500℃. The data suggest that the fluorination proceeds on the diamond surface via the deposition of CaFィイD22ィエD2 and the degree of the fluorination depends on the adatoms on the diamond surface before deposition of CaFィイD22ィエD2.
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