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1999 Fiscal Year Final Research Report Summary

Basic Research on Electronic Properties and Memory Effect of Silicon-Quantum-Dot Array and Its Application to Memory Device

Research Project

Project/Area Number 10450125
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionFukuoka University (1999)
Hiroshima University (1998)

Principal Investigator

KOHNO Atsushi  Fukuoka University, Faculty of Science, Lecture, 理学部, 講師 (30284160)

Co-Investigator(Kenkyū-buntansha) MIYAZAKI Seiichi  Hiroshima University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (70190759)
Project Period (FY) 1998 – 1999
Keywordssilicon quantum dot / self-assembling / memory effect / floating gate MOS memory / threshold voltage shift / room temperature operation / multilevel electron charging / Coulombic interaction
Research Abstract

Electrical and optical properties of silicon-quantum-dot array have been investigated to reveal the quantum confinement effect. The memory operation of metal-oxide-semiconductor (MOS) structures in which a Si quantum dot (QD) layer is embedded as a floating gate has been confirmed by analyzing the electrical characteristics. The research results on electron charging characteristics of Si QDs are summarized as follows.
1. The memory operation of Si QD floating gate MOSFETs has been demonstrated at room temperature. The hysteresis and the current bumps were observed in the drain current versus gate voltage (Id-Vg) characteristics of the MOSFETs, resulting in the electron charging of the Si QD floating gate. After discharging of QDs, stair-like changes in Id-t characteristics were observed, indicating that the charged state of QDs reaches the final stable state via the metastable state. Furthermore it was confirmed that the multilevel electron charging to Si QDs occurs by applying a positive gate pulse.
2. The electrical characteristics of Si QD floating gate MOS capacitors have quantitatively investigated to revel the electron charging and discharging characteristics of Si QDs. The bistability of the charging states for the quantum dots was confirmed around zero bias at room temperature. The number of retained electron per dot around zero gate bias was evaluated to be approximately one. It was also demonstrated that the measured flat-band voltage shift after writing operation to QDs is larger than the case of the uniform-plate floating gate. Furthermore it was suggested that Coulombic repulsive force among charged dots controls the electron discharge kinetics in a QD floating gate MOS structure.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Atsushi Kohno: "Single Electron Charging to a Silicon Quantum Dot Floating Gate in MOS Structures"Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials. 174-175 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sun-an Ding: "Quantum confinement effect in self-assembled, nanometer silicon dots"Applied Physics Letters. 73・26. 3881-3883 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Seiichi Miyazaki: "Self-Assemblling of Si Quantum Dots and Its Application to Floating Gate MOS Memory"Proc. Of Intern. Microprocesses and Nanotechnology Conf. (1999). 84-85 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Seiichi Miyazaki: "Luminescence Study of Self-Assembled, Silicon Quantum Dots"Mat. Res. Soc. Symp. Proc.. 536. 45-50 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Naoji Shimizu: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique"Extended Abstracts of the 1999 Intrn. Conf. on Solid State Devices and Materials. 80-81 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Seiichi Miyazaki: "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Atsushi Kohno et al.: "Single Electron Charging to a Silicon Quantum Dot Floating Gate in MOS Structures"Extended Abstracts of the 1998 Intern. Conf. on Solid State Devices and Materials. 174-175 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sun-an Ding et al.: "Quantum Confinement Effect in Self-Assembled Silicon Dots"Applied Physics Letters. Vol. 73, No. 26. 3881-3883 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Seiichi Miyazaki et al.: "Self-Assembling of Si Quantum Dots and Its Application to Floating Gate MOS Memory"Proc. of Intern. Microprocesses and Nanotechnology Conf.. 84-85 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Seiichi Miyazaki et al.: "Luminescence Study of Self-Assembled, Silicon Quantum Dots"Mat. Res. Soc. Symp. Proc.. Vol.536. 45-50 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Naoji Shimizu et al.: "Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique"Extended Abstracts of the 1999 Intern. Conf. on Solid State Devices and Materials. 80-81 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Seiichi Miyazaki et al.: "Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. (to be published). (2000)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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