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2001 Fiscal Year Final Research Report Summary

High breakdown voltage and high frequency field-effect transistors on heteroepitaxial diamond film.

Research Project

Project/Area Number 10450127
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

KAWARADA Hiroshi  Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (90161380)

Co-Investigator(Kenkyū-buntansha) NAGASAWA Hiroyuki  HOYA, R&D Center, Group Reader, グループリーダー
Project Period (FY) 1998 – 2000
KeywordsDiamond / H-terminated surface channel / Field-effect transistor / Cut-off frequency / Maximum frequency of oscillation / Breakdown voltage / MESFET / MISFET
Research Abstract

For the realization of high performance diamond electronic devices such as high power and high frequency transistors, FETs have been fabricated on hydrogen-terminated diamond surface conductive layer. In order to improve the performance of FETs, self-aligned gate fabrication processes which can reduce the gate length and parasitic resistances have been developed. Utilizing self-aligned gate FET fabrication process, 1 μm Cu gate MESFET realizes high transconductance of 110 mS/mm. This value exceeds the transconductance of SiC-FETs and Si-nMOSFETs of equal gate size. High performance diamond MISFETs have been also realized utilizing the same process. CaF_2 insulator which does not generate the high interface states density between hydrogen-terminated diamond is utilized as gate insulator.The highest transconductance of 86 mS/mm is obtained in 1.2 μm gate length. The MISFET shows high channel mobility of more than 250 cm^2/Vs. This value is more than twice higher than that of inversion type SiC MOSFETs. The high channel mobility is explained by the screening effect.
The RF performances of diamond MESFETs and MISFETs are measured for the first time. The cut-off frequency of 2 μm gate MESFET with transconductance of 70 mS/mm shows 2.2 GHz. On the other hand, much higher cut-off frequency of 11 GHz is realized in diamond MISFET with 0.7 μm gate length. This value is 5 times higher than 2 μm gate MESFETs. Utilizing MIS structure which has gate insulator capacitance in series to surface-channel capacitance, the source to gate capacitance is reduced half as much as that of diamond MESFET. This FET also shows highest fmax of 22 GHz and 15 dB of power gain is obtained at 2 GHz.

  • Research Products

    (60 results)

All Other

All Publications (60 results)

  • [Publications] 津川和夫: "ダイヤモンド表面チャネル型FET-その動作機構と応用-"電子情報通信学会論文誌. J81-C-II. 172-179 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "p-Type semiconductor diamond and its applications"New Ceramics. 11. 13-18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "Metal-semiconductor field effect transistors on hydrogen-terminated diamond surfaces"Diamond Films and Technol.. 8. 289-297 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.kawarada: "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces"Appl.Phys.Lett.. 72. 1878-1880 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 川原田 洋: "ダイヤモンド電界効果トランジスタの現状と将来"応用物理. 67. 128-138 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "Device simulations of diamond surface-channel MESFETs"Diam.Film.Tech.. 8. 125-133 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Hokazono: "Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond"Solid State Electronics. 43. 1465-1471 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "Device Simulations of Diamond Surface-Channel MESFETs"New Diamond and Frontier Carbon Technology. 9. 154-162 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism"Diamond and Related Materials. 8. 927-933 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kitatani: "MOSFETs on Polished Surfaces of Polycrystalline Diamond"Diamond and Related Materials. 8. 1831-1833 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length"Jpn.J.Appl.Phys.. 38. L1222-L1224 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tachiki: "Control of adsorbates and conduction on CVD-growth diamond surface, using scanning probe microscope"Applied Surface Science. 159-160. 578-582 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tachiki: "Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced"Jpn.J.Appl.Phys.. 39. 4631-4632 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kono: "Surface Order Evaluation of the Heteroepitaxial Diamond Film Growth on an Inclined β-SiC(001)"Jpn.J.Appl.Phys.. 39. 4672-4673 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process"Jpn.J.Appl.Phys.. 39. 908-910 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "High-Performance Surface-Channel Diamond Field-Effect Transistors"Mater.Sci.Forum. 353-356. 815-818 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kawarada: "Surface Channel Diamond Field Effect Transistors and Their Applications"Ext.Abst.of 1st Int.Workshop on Ultra-Low-Loss Pow.Dev.Tech.. 2000. 112-115 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 川原田洋: "表面伝導層を用いたダイヤモンド電子デバイス"応用物理. 70. 536-541 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsugawa: "Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation"Jpn.J.Appl.Phys.. 40. 3101-3107 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kawarada: "Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors"Phys.Stat.Sol.(a). 185. 79-83 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Taniyama: "Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator"Jpn.J.Appl.Phys.. 40. 698-700 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Taniuchi: "High-Frequency Performance of Diamond Field-Effect Transistors"IEEE Elect.Dev.Lett.. 22. 390-392 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tanabe: "Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films"Diamond Relat.Mater.. 10. 1652-1654 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "Potential applications of surface channel diamond field-effect transistors"Diamond Relat.Mater.. 10. 1743-1748 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Nakazawa: "Excitonic recombination radiation in phosphorus-doped CVD diamonds"Phys.Rev.B. 64. 235203-1-235203-4 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "Fabrication of Sub-0.1μm Channel Diamond MISFET"Mat.Res.Soc.Symp.Proc.. 675. E8.2.1-E8.2.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tachiki: "Nanodevice Fabrication on Hydrogenated Diamond Surface using Atomic Force Microscope"Mat.Res.Soc.Symp.Proc.. 675. W12.5.1-W12.5.5 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Umezawa: "High Frequency Application of High Transconductance Surface-Channel Diamond Field-Effect Transistors"Proc.2001 ISPSD. 2001. 195-198 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 立木実: "ダイヤモンドナノ加工技術"マテリアルインテグレーション. 14. 47-51 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kawarada: "Low pressure synthetic diamond : manufacturing and applications"Springer-Verlag(Chapter 8). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Tsugawa: ""p-Type semiconductor diamond and its applications""New Ceramics. 11,No.3. 13 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa, K. Kitatani, and H. Kawarada: ""Metal-semiconductor field effect transitors on hydrogen-terminated diamond surfaces""Diamond Films and Technol. Vol.8,No.4. 289-297 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada, C. Wild, N. Henes, P. Koidl, Y. Mizuochi, A. Hokazono, and H. Nagasawa: ""Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001)surfaces""Appl. Phys. Lett.. Vol.72, No.15. 1878-1880 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada: ""MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces""Materials Science Forum. Vol.264-268. 977-980 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada: ""Diamond field-effect transistor-Its present status and future""Oyo Buturi. 67. 128-138 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa and H. Kawarada: ""Device simulations of diamond surface-channel MESFETs""Diam. Film. Tech. 8. 125-133 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A. Hokazono, K. Tsugawa, H. Umezawa, K. Kitatani and H. Kawarada: ""Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond""Solid State Electronics. 43. 1465-1471 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa and H. Kawarada: ""Device Simulations of Diamond Surface-Channel MESFETs""New Diamond and Frontier Carbon Technology. Vol.9. 154 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima and H. Kawarada: ""High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism""Diamond and Related Materials. Vol.8. 927-933 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita and H. Kawarada: ""MOSFETs on Polished Surfaces of Polycrystalline Diamond""Diamond and Related Materials. Vol.8. 1831-1833 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, K. Tsugawa, S. Yamanaka, D. Takeuchi, H. Okushi and H. Kawarada: ""High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length""Jpn. J. Appl. Phys.. Vol.38. L1222-L1224 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tachiki, T. Fukuda, K. Sugata, H. Seo, H. Umezawa, and H. Kawarada: ""Control of adsorbates and conduction on CVD-growth diamond surface, using scanning probe microscope""Applied Surface Science. 159-160. 578-582 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tachiki, T. Fukuda, K. Sugata, H. Seo, H. Umezawa, and H. Kawarada: ""Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced Oxidation""Jpn. J. Appl. Phys.. Vol.39. 4631-4632 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Kano, T. Goto, T. Abukawa, C. Wild, P. Koidl, and H. Kawarada: ""Surface Order Evaluation of the Heteroepitaxial Diamond Film Growth on an Inclined β-SiC(001)""Jpn. J. Appl. Phys.. Vol.39. 4372-4673 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, K. Tsugawa, S. Yamanaka, D. Takeuchi, H. Okushi, and H. Kawarada: ""Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process""Jpn. J. Appl. Phys.. Vol.39. L908-L910 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Okushi and H. Kawarada: ""High Performance Surface-Channel Diamond Field-Effect Transistors""Mater. Sci. Forum.. Vol.353-356. 815-818 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada, H. Umezawa, K. Tsugawa and M. Tachiki: ""Surface Chennel Diamond Field Effect Transistors and Their Applications""Ext. Abst. of 1st Int. Workshop on Ultra-Low-Loss Pow. Dev. Tech.. 112-115 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada, M. Tachiki and H. Umezawa: ""Diamond electron devices using a surface-conductive layer""Oyo Buturi. 705. 536-541 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tsugawa, H. Umezawa, H. Kawarada: ""Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation""Jpn. J. Appl. Phys. Vol.40. 3101-3107 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada, Y. Araki, T. Sakai, T. Ogawa, and H. Umezawa: ""Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompetible Ion Sensors""phys. stat. sol. (a). Vol. 185. 79-83 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N. Taniyama, M. Kudo, O. Matsumoto, H. Kawarada: ""Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator""Jpn. J. Appl. Phys. Vol.40. L698-L700 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki and H. Kawarada: ""High-Frequency Performance of Diamond Field-Effect Transistors""IEEE Elect Dev. Lett.. Vol.22. 390-392 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Tanabe, K. Nakazawa, J. Susantyo, H. Kawarada and S. Koizumi: ""Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films""Diamond Relat. Mater. Vol.10. 1652-1654 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki and H. Kawarada: ""Potential applications of surface channel diamond field-effect transistors""Diamond Relat. Mater. Vol.10. 1743-1748 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Nakazawa, K. Tanabe, M. Tachiki, H. Kawarada and S. Koizumi: ""Excitonic recombination radiation in phosphorus-doped CVD diamonds""Phys. Rev. B. Vol.64. 235203-1-235203-4 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, T. Arima, N. Fujihara, H. Taniuchi, H. Ishizaka, M. Tachiki and H. Kawarada: ""Fabrication of Sub-0.1 μm Channel Diamond MISFET""Mat. Res. Soc. Symp. Proc.. Vol.675. E82.1-82.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tachiki, T. Fukuda, H. Seo, K. Sugata, T. Banno, H. Umezawa and H. Kawarada: ""Nanodevice Fabrication on Hydrogenated Diamond Surface using Atomic Force Microscope""Mat. Res. Soc. Symp. Proc.. Vol.675. W125.1-125.5 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Y. Ohba, M. Tachiki and H. Kawarada: ""High Frequency Application of High Transconductance Surface-Channel Diamond Field-Effect Transistors""Proc. 2001 ISPSD. 195-198 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tachiki, K. Nakazawa and H. Kawarada: ""Diamond nano-fabrication""Materials Integration. 14. 47-51 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Kawarada: ""Low pressure synthetic diamond : manufacturing and applications" Chapter 8 : Hetero-epitaxy and highly oriented diamond deposition"Springer-Verlag. (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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