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2001 Fiscal Year Final Research Report Summary

Researching for New Quantum Optoelectronic Properties by Disorderly Stacked-Layer of Disordered Quantum Dots

Research Project

Project/Area Number 10450128
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka Electro-Communication University

Principal Investigator

SASAKI Akio  Osaka Electro-Communication Univ. Dept. of Electroinics, Professor, 工学部, 教授 (10025900)

Co-Investigator(Kenkyū-buntansha) 王 学論  産業技術総合研究所, 光技術研究部門, 主任研究官
WAKAHARA Akihiro  Toyohashi Univ.of Tech. Dept. of Electrical & Electronic Eng. Associate Prof., 工学部, 助教授 (00230912)
WANG xue-Lun  National Institute of Advanced Industrial Science and Technology Photonic Research Institute, Chief Researcher
Project Period (FY) 1998 – 2000
Keywordsquantum wire / quantum dot / naturally formed quantum dot / spontaneously ordered semiconductor / disordered effects / InAs / GaAs / GaInP / GaAs / transition thickness
Research Abstract

(1) The maximum thickness of the growth layer at which quantum dots begin to form naturally is derived theoretically for the heteroepitaxial growth of the semiconductor layer whose lattice constant differs from that of the semiconductor substrate. The theoretical results agree well with the experimental resutls of InAs/GaAs, InP/GaP, ans SiGe/Si. (published in Thin Solid Films)
(2) The optimum thickness of GaAs layer for the InAs/GaAs quantum-dot stacked layer is experimentally determined. (published in Journal of Electronics Materials)
(3) The disordered effects which causes the enhancement of luminescence intensity and the red shift of luminescence peak have been observed in the spontaneously ordered GaInP/GaAs. (published in Journal of Applied Physics) Although the luminecence enhancement and red-shift were observed in the ordered states in disordered matrix, the phenomena can be interpreted with the effects by thedisordered states in ordered matrix
(4) The disordered quantum wire in w … More hich the wire width, thickness, and composition are disorderly fabricated exhibits the effects of luminescence enhancement and red-shift. (published in Applied physics Letters)
(5) Remarkable progress in growth technology is required to fabricate a high density of InAs/GaAs quantum dot. Howerer, in the InGaN/GaN quantum well which is grown at the low temperature and/or with a high In composition rate, the dot-like quantum structure is formed. It exhibits the luminescence enhancement and the red-shift. (submitted to the International Conference on Physics of Semiconductors)
(6) The final aim is to search new quantum optoelectronic properties such as the luminescence enhancement and the red-shift by disorderly stacked layer of disordered quantum dots (d-QDs) fabricated by the Stmaski-Krastanov growth mode. However, scientific and technological achievements by this research project can be stated as that the properties which were expected by disorderly stacked layer of d-QDs were observed also by the disordered quantum wires, the spontaneously ordered semiconductors, and the quantum well with compositional fluctuations caused by a large lattice-mismatching. Further development for the quantum optoelectronic properties can be expected by the improvement of the growth technology Less

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] S.Rouvimov他9名: "Effects of GaAs-Spacer Strain on Vertical Ordering of Stacked InAs Quantum Dots in a GaAs Matrix"Journal of Electronic Materials. 27. 427-431 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Furukawa他4名: "Stacking Number Dependence of Size Distribution of Vertically Stacked InAs/GaAs Quantum Dots"Journal of Electronic Materials. 28. 452-456 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sasaki他5名: "Transition hickness of Semiconductor Heteroepitaxy"Thin Solid Film. 367. 277-280 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] X-Q.Liu他4名: "Temperature-Dependent Carrier Trapping Processes in Short Period Quantum Wire Superlattices Grown by Flow Rate Modulation Epitaxy"

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sasaki: "Ordering Dependence of Carrier Lifetimes and Ordered States of Ga_<0.52>In_<0.48>P/GaAs with Degree of Order 【less than or equal】 0.55"Journal of Applied Physics. 89. 343-347 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sasaki他4名: "Enhanced Luminescence from the Disordered Quantum-Wire Superlattice"Applied Physice Letters. 79. 1870-1872 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 佐々木昭夫: "量子効果半導体"電子情報通信学会. 211 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Rouvimov, Z.Liliental-Weber, W.Swinder, J.Washburn, E.R.weber, A.Sasaki, A.Wakahara, Y.furukawa, T.Abe, and S.Noda: "Effects of GaAs-Spacer Strain on Vertical Ordering of Stacked InAs Quantum Dots in a GaAs Matrix"Journal of Electronic Materials. Vol.27. 427-431 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Furukawa, S.Noda, M.Ishii, A.Wakahara, and A.Sasaki: "Stacking Number Dependence of Size Distribution of Vertically Staced InAs/GaAs Quantum Dots"Journal of Electronic Materials. Vol.28. 452-456 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki, E.R.Weber, Z.Liliental-Weber, S.Rouvimov, J.Washburn, and Y.Nabetani: "Transition Thickness of Semiconductor Heteroepitaxy"Thin Solid Film. Vol.367. 277-280 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X-Q.Liu, A.Sasaki, N.Ohno, X-L.Wang, and M.Ogura: "Temperature-Dependent Carrier Trapping Processes in Short Period Quantum Wire Superlattices Grown by Flow Rate Modulation Epitaxy"Applied Physics Letters. Vol.77. 1481-1483 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki, Sg.Fujita, Y.Hsuand G.B.Stringfellow: "Ordering Dependence of Carrier Lifetimes and Ordered States Ga_<0.52>In_<0.48>P/GaAs with Degreee of Order ≦0.55"Journal of Applied Physics. Vol.89. 343-347 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki, R.Okanishi, X-Q.Liu, X-L.Wang, and M.Ogura: "Enhanced Luminescence from the Disordered Quantum-Wire Superlattice"Applied Physics Letters. Vol.79. 1870-1872 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki, K.Nishizuka, H.Nagata, and X-Q.Liu: "Growth Temperature Dependence of Luminescence Properties and Phase Separation of InGaN layers"19^<th> Electronic Materials Symposium, Izu-Nagaoka,. June. 28-30 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Nishizuka, N.Kumatani, A.Sasaki, and N.Ohno: "Carrier Recombination Processes of InGaN SqWs Grown at Different Temperatures"20^<th> Electronic Materials Symposium, Nara. June. 20-22 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akio Sasaki: "Institute of Electronics, Information, and Communication of Japan March"Quantum-Effects of Semiconductors. (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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