1999 Fiscal Year Final Research Report Summary
| Project/Area Number |
10450141
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Osaka Electro-Communication University |
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Principal Investigator |
SUSAKI Wataru Osaka Electro-Communication University, Faculty of Engineering, Professor, 工学部, 教授 (00268294)
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| Co-Investigator(Kenkyū-buntansha) |
SHIBATA Noboru Osaka Electro-Communication University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (90076836)
MATSUURA Hideharu Osaka Electro-Communication University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (60278588)
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| Project Period (FY) |
1998 – 1999
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| Keywords | infrared semiconductor laser / MBE with a water cooling System / superlattice / Type II / GaSb / InAs / InGaSb / doping |
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| Research Abstract |
The basic research for long wavelength of room temperature emission wavelength of Type II superlattice infrared laser was carried out. Water cooling type molecular beam epitaxitial growthmethod was used in the manufacture of the superlattice. By the basic study on device design, the growth of (AlGa) (AsSb) was done as cladding layer. Doping conditions of cladding layer of the n and p type and high-dense doping conditions for ohmic contact to GaSb were decided experimentally using Te and Be.
Next, the research on design and growth, evaluation of the InAs/InGaSb/InAs superlattice active layer was carried out. The structure which reduced state density of positive hole by solving the degeneracy of light hole band in valence band and heavy positive hole band using compressive strain between (InGa)Sb quantum well and InAs quantum well, was designed by the computer simulation in the design of the superlattice, in order to reduce threshold current density. The structure which inserted (AlGa) (AsSb) between cladding layer and superlattice active layer was designed.
Based on examination and computer simulation of these growth condition, the following were carried out : InAs/InGaSb/InAs superlattice active layer and growth of the superlattice composed of the (AlGa)(AsSb) strain compensated layer and evaluation. By the evaluation of the photo luminescence, the light emission of 3.1 μm wavelength was realized, and the result of becoming a base of the device manufacture for lengthening room temperature emission wavelength of the semiconductor laser was obtained.
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