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1999 Fiscal Year Final Research Report Summary

Direct Measurements of Kink Diffusion Barrier Height by Plan-view High Resolution Electron Microscopy

Research Project

Project/Area Number 10450230
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Physical properties of metals
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

MAEDA Koji  The Univ. of Tokyo, Dept. of Applied Physics, Professor, 大学院・工学系研究科, 教授 (10107443)

Co-Investigator(Kenkyū-buntansha) SUZUKI Kunio  Nagasaki Univ., Dept. of Mater. Sci., Associate Professor, 工学部, 助教授 (50107439)
MERA Yutaka  The Univ. of Tokyo, Dept. of Applied Physics, Research Associate, 大学院・工学系研究科, 助手 (40219960)
Project Period (FY) 1998 – 1999
KeywordsHigh Resolution Electron Microscopy / Semiconductor / Dislocation / Lattice Image / Kink / Radiation Enhanced Dislocation Glide / Peierls Mechanism / Image Processing
Research Abstract

One of the aims of this Project is to develop an image-processing scheme to extract from a high resolution electron microscopic (HREM) plan-view image of a dislocation in semiconductor the line shape of the partial dislocations with a resolution far higher than the conventional weak beam technique. With this novel technique, we investigate the kink motion along a dislocation line and tried to deduce the kink migration energy, which is one of the fundamental parameters in dislocation glide motion in semiconductors. Experiments done for Ge and GaAs revealed that the migration of kinks on 30° partial dislocations is enhanced by electronic excitation induced by electron beam irradiation used for microscopic observations. For Ge, the kink migration energy under electronic excitation wag measured to be about 0.75 eV. Although not by HREM observations, effects of electron irradiation on dislocation glides in hexagonal GaN single crystals were also investigated. It was found that the mobility of basal dislocations and edge dislocations on a pyramida1 slip plane is enhanced. From the fact that concave parts and convex parts are both affected, it was concluded that kink pair formation as well as kink migration is enhanced by electronic excitation.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] M. Inoue, et al.: "Electronically Enhanced Kink Motion on 30° Partial Dislocations in Ge Directly Observed by Plan-view High Resolution Electron Microscopy"J. Appl. Phys.. 83・4. 1953-1957 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Inoue, et al.: "Reliable Image Processing that can Extract an Atomically-resolved Line Shape of Partial Dislocations in Semiconductors from Plan-view High-resolution Electron Microscopic Images"Ultramicroscopy.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 前田康二、鈴木邦夫: "半導体中の転位運動素過程の原子レベル直線観察"まてりあ. 37・12. 998 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Yamashita, et al.: "Hydrogen Enhanced Dislocation Glides in Silicon"Phys. Stat. Sol. (a). 171. 27-34 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Maeda, et al.: "Electronically induced Dislocation Glide Motion in Hexagonal GaN Single Crystals"Physica B. 273-274. 134-139 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Inoue, K. Suzuki, H. Amasuga, Y. Mera and K. Maeda: "Electronically Enhanced Kink Motion on 30° Partial Dislocations in Ge Directly Observed by Plan-view High Resolution Electron Microscopy"J. Appl. Phys.. 83(4). 1953-1957 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura, Y. Mera, S. Takeuchi and K. Maeda: "Reliable Image Processing that can Extract an Atomically-resolved Line Shape of Partial Dislocations in Semiconductors from Plan-view High-resolution Electron Microscopic Images"Ultramicroscopy. 75. 5-14 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Maeda and K. Suzuki: "Direct Observations of the Elementary Processes of Dislocation Glides in Semiconductors"Materia. 37(12). 988 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Yamashita, F. Jyobe, Y. Kamiura and K. Maeda: "Hydrogen Enhanced Dislocation Glides in Silicon"phys. stat. sol. (a). 171. 27-34 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Maeda, K. Suzuki, M. Ichihara, S. Nishiguchi, K. Ono, Y. Mera and S. Takeuchi: "Electronically induced Dislocation Glide Motion in Hexagonal GaN Single Crystals"Physica B. 273-274. 134-139 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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